@article{choi_kim_kang_jeon_bae_2006, title={Effects of N-2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films}, volume={9}, DOI={10.1149/1.2165447}, number={3}, journal={Electrochemical and Solid State Letters}, author={Choi, J. H. and Kim, S. and Kang, H. S. and Jeon, H. and Bae, C.}, year={2006}, pages={F13–15} }
 @article{choi_kim_kim_kang_jeon_bae_2006, title={Effects of N-2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods}, volume={24}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Choi, J. and Kim, S. and Kim, J. and Kang, H. and Jeon, H. and Bae, C.}, year={2006}, pages={900–907} }
 @article{kim_kim_jeon_cho_chung_bae_2005, title={Characteristics of HfO2 thin films grown by plasma atomic layer deposition}, volume={87}, number={5}, journal={Applied Physics Letters}, author={Kim, J. and Kim, S. and Jeon, H. and Cho, M. H. and Chung, K. B. and Bae, C.}, year={2005} }
 @article{kim_kim_kang_choi_jeon_cho_chung_back_yoo_bae_2005, title={Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods}, volume={98}, number={9}, journal={Journal of Applied Physics}, author={Kim, J. and Kim, S. and Kang, H. and Choi, J. and Jeon, H. and Cho, M. and Chung, K. and Back, S. and Yoo, K. and Bae, C.}, year={2005} }
 @article{park_koo_kim_jeon_bae_krug_2005, title={Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition}, volume={86}, number={25}, journal={Applied Physics Letters}, author={Park, M. and Koo, J. and Kim, J. and Jeon, H. and Bae, C. and Krug, C.}, year={2005} }
 @article{bae_krug_lucovsky_2004, title={Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1806439}, abstractNote={Electron trapping in Al-gate n-GaN∕nitrided-thin-Ga2O3∕SiO2 and n-GaN∕Si3N4 MIS capacitors was evaluated by capacitance-voltage (C–V) measurements. Significant positive flatband voltage shift (ΔVfb) was observed with increasing starting dc bias in the C–V measurements. For similar equivalent oxide thickness and under the same C–V measurement conditions, ΔVfb in the nitride was 3–10 times larger than in the oxide samples. It is suggested that flatband voltage shifts are due to border traps in SiO2 and to interface and bulk traps in Si3N4 samples.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Bae, C and Krug, C and Lucovsky, G}, year={2004}, pages={2379–2383} }
 @article{bae_lucovsky_2004, title={Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1807396}, abstractNote={In previous studies, device-quality Si-SiO2 interfaces and dielectric bulk films (SiO2) were prepared using a two-step process: (i) remote plasma-assisted oxidation (RPAO) to form a superficially interfacial oxide (∼0.6nm) and (ii) remote plasma-enhanced chemical vapor deposition (RPECVD) to deposit the oxide film. The same approach has been applied to the GaN-SiO2 system. Without an RPAO step, subcutaneous oxidation of GaN takes place during RPECVD deposition of SiO2, and on-line Auger electron spectroscopy indicates a ∼0.7-nm subcutaneous oxide. The quality of the interface and dielectric layer with/without RPAO process has been investigated by fabricated GaN metal-oxide-semiconductor capacitors. Compared to single-step SiO2 deposition, significantly reduced defect state densities are obtained at the GaN-SiO2 interface by independent control of GaN-GaOx interface formation by RPAO and SiO2 deposition by RPECVD.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Bae, C and Lucovsky, G}, year={2004}, pages={2402–2410} }
 @article{bae_lucovsky_2004, title={Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1807411}, abstractNote={Low-temperature remote plasma-assisted oxidation and nitridation processes for interface formation and passivation have been extended from Si and SiC to GaN. The initial oxidation kinetics and chemical composition of thin interfacial oxide were determined from analysis of on-line Auger electron spectroscopy features associated with Ga, N, and O. The plasma-assisted oxidation process is self-limiting with power-law kinetics similar to those for the plasma-assisted oxidation of Si and SiC. Oxidation using O2∕He plasma forms nearly pure GaOx, and oxidation using 1% N2O in N2 forms GaOxNy with small nitrogen content, ∼4–7at.%. The interface and dielectric layer quality was investigated using fabricated GaN metal-oxide-semiconductor capacitors. The lowest density of interface states was achieved with a two-step plasma-assisted oxidation and nitridation process before SiO2 deposition.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Bae, C and Lucovsky, G}, year={2004}, pages={2411–2418} }
 @article{bae_lucovsky_2004, title={Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices}, volume={566}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2004.05.072}, abstractNote={This paper applies remote plasma processing techniques, remote plasma assisted oxidation (nitridation) RPAO(N) and RP enhanced chemical vapor deposition (RPECVD), developed originally for fabrication of Si MOS devices with deposited SiO2, Si3N4 and Si oxynitride alloys to the formation of device-quality GaN MOS devices. Significant improvements in device performance for GaN–SiO2 interfaces are demonstrated by following an RPAO process step that forms the device interface with an interface nitridation RPAN step prior to the deposition of an SiO2 dielectric film by RPECVD. On-line Auger electron spectroscopy is used to monitor interface bonding for different ordering of RPAO and RPAN process steps.}, journal={SURFACE SCIENCE}, author={Bae, C and Lucovsky, G}, year={2004}, month={Sep}, pages={356–360} }
 @article{bae_lucovsky_2004, title={Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices}, volume={72}, ISSN={["1873-5568"]}, DOI={10.1016/j.mee.2003.12.043}, abstractNote={This paper applies remote plasma processing techniques, remote plasma assisted oxidation (nitridation) RPAO(N) and RP enhanced chemical vapor deposition (RPECVD), developed originally for fabrication of Si MOS devices with deposited SiO2, Si3N4 and Si oxynitride alloys, to the formation of device-quality GaN MOS devices. Significant improvements in device performance for GaN–SiO2 interfaces are demonstrating by following an RPAO process step that forms the GaN–dielectric interface with an interfacial RPAN step prior to the deposition of the SiO2 dielectric film by RPECVD. On-line Auger electron spectroscopy is used to monitor interface bonding for different ordering of RPAO and RPAN process steps.}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Bae, C and Lucovsky, G}, year={2004}, month={Apr}, pages={236–240} }
 @article{bae_lucovsky_2004, title={Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices}, volume={234}, ISSN={["1873-5584"]}, DOI={10.1016/j.apsusc.2004.05.077}, abstractNote={This paper applies remote plasma processing techniques, remote plasma assisted oxidation (nitridation) RPAO(N) and RP enhanced chemical vapor deposition (RPECVD), developed originally for fabrication of Si MOS devices with deposited SiO2, Si3N4 and Si oxynitride alloys to the formation of device-quality GaN MOS devices. Significant improvements in device performance for GaN–SiO2 interfaces are demonstrated by following an RPAO process step that forms the device interface with an interface nitridation RPAN step prior to the deposition of an SiO2 dielectric film by RPECVD. On-line Auger electron spectroscopy (AES) is used to monitor interface bonding for different ordering of RPAO and RPAN process steps.}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Bae, C and Lucovsky, G}, year={2004}, month={Jul}, pages={475–479} }
 @article{bae_krug_lucovsky_chakraborty_mishra_2004, title={Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films}, volume={96}, ISSN={["1089-7550"]}, DOI={10.1063/1.1772884}, abstractNote={The electrical characteristics of n-GaN∕nitrided-thin-Ga2O3∕SiO2 and n-GaN∕Si3N4 metal-insulator-semiconductor (MIS) capacitors have been compared, and the work-function difference ϕms and effective dielectric-fixed charge density Qf,eff have been determined. Oxide samples showed lower interface trap level density Dit, lower leakage current, and better reproducibility compared to the nitride samples. The superior properties of the oxide samples are partially attributed to the nitrided-thin-Ga2O3 layer (∼0.6-nm-thick). ϕms and Qf,eff were determined, respectively, as 0.13V and 1.0×1012qcm−2 in oxide and 0.27V and −3.6×1011qcm−2 in nitride samples using flatband voltage versus dielectric thickness data. True dielectric-fixed charge density and location of the major amount of fixed charge are discussed based on Qf,eff, Dit, and spontaneous polarization of n-GaN.}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bae, C and Krug, C and Lucovsky, G and Chakraborty, A and Mishra, U}, year={2004}, month={Sep}, pages={2674–2680} }
 @article{bae_krug_lucovsky_chakraborty_mishra_2004, title={Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures}, volume={84}, DOI={10.1063/1.1767599}, abstractNote={In most previous reports on Al-gated n-GaN∕SiO2 metal–oxide–semiconductor (MOS) structures, the work–function difference between Al and n-GaN (ϕms) has been chosen as 0V by assuming that the work function of the Al gate and n-GaN are both 4.1eV. In this letter, ϕms is determined as ∼0.1V using Al-gated n-GaN∕nitrided-thin-Ga2O3∕SiO2 MOS capacitors by measuring flatband voltage as a function of oxide thickness. Formation of an ultrathin (∼0.6-nm-thick) Ga2O3 layer on n-GaN prior to the deposition of SiO2 is important to prevent uncontrolled parasitic oxidation of then-GaN surface and possibly reduces the interface dipole between n-GaN and SiO2.}, number={26}, journal={Applied Physics Letters}, author={Bae, C. and Krug, C. and Lucovsky, G. and Chakraborty, A. and Mishra, U.}, year={2004}, pages={5413–5415} }
 @article{bae_rayner_lucovsky_2003, title={Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing}, volume={216}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(03)00497-5}, abstractNote={In previous studies, device-quality Si–SiO2 interfaces and dielectric bulk films (SiO2) were prepared using a two-step process; (i) remote plasma-assisted oxidation (RPAO) to form a superficially interfacial oxide (∼0.6 nm) and (ii) remote plasma enhanced chemical vapor deposition (RPECVD) to deposit the oxide film. The same approach has been applied to GaN–SiO2 system. Low-temperature (300 °C) remote N2/He plasma cleaning of the GaN surface, and the kinetics of GaN oxidation using RPAO process and subcutaneous oxidation during the SiO2 deposition using an RPECVD process have been investigated from analysis of on-line Auger electron spectroscopy (AES) features associated N and O. Compared to single-step SiO2 deposition, significantly reduced defect state densities are obtained at the GaN–dielectric interfaces by independent control of GaN–GaOx (x∼1.5) interface formation by RPAO, and SiO2 deposition by RPECVD.}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Bae, C and Rayner, GB and Lucovsky, G}, year={2003}, month={Jun}, pages={119–123} }
 @article{bae_lucovsky_2003, title={Oxide formation and passivation for micro- and nano-electronic devices}, volume={212}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(03)00139-9}, abstractNote={A low-temperature remote plasma-assisted oxidation process for interface formation and passivation has been extended from Si and SiC to GaN. The process, which can be applied to nano-scale structures including quantum dots and wires, provides excellent control of ultra-thin interfacial layers which passivate the GaN substrate, preventing a parasitic or subcutaneous oxidation of the substrate during plasma deposition of SiO2. The remote plasma processing for GaN–SiO2 heterostructures includes: (i) an in situ nitrogen plasma surface clean; (ii) a remote plasma-assisted oxidation for formation of an interfacial GaOx (x=1.5) transition region between the GaN and deposited dielectric; and (iii) a remote plasma-enhanced chemical vapor deposition of an SiO2 dielectric.}, journal={APPLIED SURFACE SCIENCE}, author={Bae, C and Lucovsky, G}, year={2003}, month={May}, pages={644–648} }
 @article{lee_wu_bae_hong_lucovsky_2003, title={Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress}, volume={47}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(02)00257-5}, abstractNote={Abstract The structural dependence of breakdown characteristics and electrical degradation in ultrathin oxide/nitride (O/N) dielectrics, prepared by remote plasma enhanced chemical vapor deposition, is investigated under constant voltage stress. In the early stage of oxide wearout, soft breakdown is a local phenomenon dominated by the tunneling current. After a given period of stress, a strong channel-length dependence of dielectric breakdown and the corresponding stress-induced leakage current from the evolution of increased tunneling current have been found. Stacked O/N dielectrics with interface nitridation demonstrate improved device performance on subthreshold swing and threshold voltage shifts after stress, indicating the suppression of stress-induced traps at the oxide/Si and oxide/drain interfaces compared to thermal oxides. Experimental evidence shows more severe breakdown and device degradation in the threshold voltage, drain current and transconductance for shorter channel PMOSFETs with O/N dielectrics. These degradations result from the enhancement of hole trapping in the gate–drain overlap region as evidenced by a positive off-state leakage current, which leads to hard breakdown, and the complete failure of device functionality.}, number={1}, journal={SOLID-STATE ELECTRONICS}, author={Lee, YM and Wu, YD and Bae, C and Hong, JG and Lucovsky, G}, year={2003}, month={Jan}, pages={71–76} }