Choelhwyi Bae

Choi, J. H., Kim, S., Kang, H. S., Jeon, H., & Bae, C. (2006). Effects of N-2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films. Electrochemical and Solid State Letters, 9(3), F13–15. https://doi.org/10.1149/1.2165447

Choi, J., Kim, S., Kim, J., Kang, H., Jeon, H., & Bae, C. (2006). Effects of N-2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 24(4), 900–907.

Kim, J., Kim, S., Jeon, H., Cho, M. H., Chung, K. B., & Bae, C. (2005). Characteristics of HfO2 thin films grown by plasma atomic layer deposition. Applied Physics Letters, 87(5).

Kim, J., Kim, S., Kang, H., Choi, J., Jeon, H., Cho, M., … Bae, C. (2005). Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods. Journal of Applied Physics, 98(9).

Park, M., Koo, J., Kim, J., Jeon, H., Bae, C., & Krug, C. (2005). Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition. Applied Physics Letters, 86(25).

Bae, C., Krug, C., & Lucovsky, G. (2004). Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383. https://doi.org/10.1116/1.1806439

Bae, C., & Lucovsky, G. (2004). Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2402–2410. https://doi.org/10.1116/1.1807396

Bae, C., & Lucovsky, G. (2004). Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2411–2418. https://doi.org/10.1116/1.1807411

Bae, C., & Lucovsky, G. (2004, September 20). Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices. SURFACE SCIENCE, Vol. 566, pp. 356–360. https://doi.org/10.1016/j.susc.2004.05.072

Bae, C., & Lucovsky, G. (2004, April). Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices. MICROELECTRONIC ENGINEERING, Vol. 72, pp. 236–240. https://doi.org/10.1016/j.mee.2003.12.043

Bae, C., & Lucovsky, G. (2004, July 15). Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices. APPLIED SURFACE SCIENCE, Vol. 234, pp. 475–479. https://doi.org/10.1016/j.apsusc.2004.05.077

Bae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films. JOURNAL OF APPLIED PHYSICS, 96(5), 2674–2680. https://doi.org/10.1063/1.1772884

Bae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures. Applied Physics Letters, 84(26), 5413–5415. https://doi.org/10.1063/1.1767599

Bae, C., Rayner, G. B., & Lucovsky, G. (2003, June 30). Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing. APPLIED SURFACE SCIENCE, Vol. 216, pp. 119–123. https://doi.org/10.1016/S0169-4332(03)00497-5

Bae, C., & Lucovsky, G. (2003, May 15). Oxide formation and passivation for micro- and nano-electronic devices. APPLIED SURFACE SCIENCE, Vol. 212, pp. 644–648. https://doi.org/10.1016/S0169-4332(03)00139-9

Lee, Y. M., Wu, Y. D., Bae, C., Hong, J. G., & Lucovsky, G. (2003). Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress. SOLID-STATE ELECTRONICS, 47(1), 71–76. https://doi.org/10.1016/S0038-1101(02)00257-5