@article{park_terry_stewart_parsons_2007, title={In situ Auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces}, volume={23}, ISSN={["0743-7463"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000246456700038&KeyUID=WOS:000246456700038}, DOI={10.1021/la061898u}, abstractNote={Growth initiation and film nucleation in atomic layer deposition (ALD) is important for controlling interface composition and achieving atomic-scale films with well-defined composition. Ruthenium ALD is studied here using ruthenocene and oxygen as reactants, and growth initiation and nucleation are characterized on several different growth surfaces, including SiO2, HfO2, and hydrogen terminated silicon, using on-line Auger electron spectroscopy and ex-situ X-ray photoelectron spectroscopy. The time needed to reach the full growth rate (typically approximately 1 A per deposition cycle) is found to increase as the surface energy of the starting surface (determined from contact angle measurements) decreased. Growth starts more readily on HfO2 than on SiO2 or Si-H surfaces, and Auger analysis indicates distinct differences in surface reactions on the various surfaces during film nucleation. Specifically, surface oxygen is consumed during ruthenocene exposure, so the nucleation rate will depend on the availability of oxygen and the energetics of surface oxygen bonding on the starting substrate surface.}, number={11}, journal={LANGMUIR}, author={Park, Kie Jin and Terry, David B. and Stewart, S. Michael and Parsons, Gregory N.}, year={2007}, month={May}, pages={6106–6112} }
 @article{gougousi_terry_parsons_2006, title={Charge generation during oxidation of thin Hf metal films on silicon}, volume={513}, ISSN={["0040-6090"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000238963600033&KeyUID=WOS:000238963600033}, DOI={10.1016/j.tsf.2006.02.004}, abstractNote={Oxidation of Hf metal films on Si appears to follow different charge generation rules than the traditional oxidation of Si described in detail by Deal et al. [B.E. Deal, M. Sklar, A.S. Grove, E.H. Snow, J. Electrochem. Soc. 114 (1967) 226]. Oxidation of thin Hf metal films on silicon in oxygen rich environments to form Hf-silicate results in rapid growth of silicon oxide interfacial layers and generation of significant charge concentration in the films. Oxidation of Hf in oxygen-deficient environment leads to improved control of the interface with much thinner interfacial layers and substantial reduction in the charge present in the films. Results from capacitance vs. voltage and X-ray photoelectron spectroscopy measurements are compared to correlate charge with chemical structure evolution during oxidation and dielectric layer formation. It is demonstrated that processing conditions may influence the quality of the Hf dielectric film significantly by generating positive charge that is not intrinsic to the material.}, number={1-2}, journal={THIN SOLID FILMS}, author={Gougousi, Theodosia and Terry, David B. and Parsons, Gregory N.}, year={2006}, month={Aug}, pages={201–205} }
 @article{gougousi_kelly_terry_parsons_2003, title={Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon}, volume={93}, ISSN={["1089-7550"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000180630200056&KeyUID=WOS:000180630200056}, DOI={10.1063/1.1531818}, abstractNote={In this article, we present data on the properties of La-based high-k dielectric films prepared by oxidation of La deposited by physical vapor deposition on silicon. Films are characterized by x-ray photoelectron spectroscopy, infrared absorption, and capacitance versus voltage analysis. We find that when we oxidize La metal sputter deposited on Si substrates, it reacts with the silicon substrate to form La silicate. La films as thick as 300 Å will react completely with Si under moderate oxidation conditions (900 °C for 10 min) suggesting a very rapid silicidation reaction between La and Si. Under some processing conditions the as-deposited films contain a small La2O3 component that reduces to La silicate upon anneal at high temperatures. La-silicate films do not phase separate into La2O3 and SiO2 upon annealing at 1050 °C, and their resistance to H2O incorporation depends critically on the oxidation temperature. Electrical measurements show a high concentration of positive fixed charge.}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Gougousi, T and Kelly, MJ and Terry, DB and Parsons, GN}, year={2003}, month={Feb}, pages={1691–1696} }