@article{sawant_sridhar_baliga_1999, title={An experimental analysis of the dual gate emitter switched thyristor (DG-EST)}, volume={43}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(99)00148-3}, abstractNote={In recent years, various dual MOS gated thyristor structures have been proposed to improve the three pronged trade-off of forward voltage drop, turn-off time and forward biased safe operating area when compared to single gate devices. The dual gate emitter switched thyristor (DG-EST), with its unique thyristor current partitioning mechanism, has been reported to posses superior characteristics when compared to conventional single gate ESTs. In this paper, a detailed study of the device physics of operation of the DG-EST is presented, supported by two dimensional numerical simulations. Effects of variations in the floating emitter length, lifetime in the drift region and temperature on the forward voltage drop are experimentally observed. An analytical model predicting the maximum controllable current density (JMCC) of the DG-EST is reported and confirmed through experimental measurements. The DG-EST is found to have a superior trade-off curve of on-state voltage drop versus turn-off time when compared to the conventional emitter switched thyristor (C-EST).}, number={10}, journal={SOLID-STATE ELECTRONICS}, author={Sawant, S and Sridhar, S and Baliga, BJ}, year={1999}, month={Oct}, pages={1901–1908} }
 @article{sridhar_baliga_1997, title={Current saturation mechanism and FBOSA of the SIMEST}, volume={41}, ISSN={["0038-1101"]}, DOI={10.1016/S0038-1101(96)00202-X}, abstractNote={It is demonstrated that the current saturation mechanism for the SIMEST is due to operation of the thyristor region in a non-regenerative mode by the shunting of holes from the P-base region via a lateral P-MOSFET, a mechanism not observed in previous power devices. The FBSOA of the SIMEST is shown to be limited by avalanche breakdown in the drift region at low current densities and by the breakdown of the lateral N-channel MOSFET at high current densities. The effects of the parametric variations on the output characteristics and the FBSOA are reported for the first time.}, number={4}, journal={SOLID-STATE ELECTRONICS}, author={Sridhar, S and Baliga, BJ}, year={1997}, month={Apr}, pages={561–566} }
 @article{sridhar_baliga_1997, title={Output characteristics of the dual channel EST}, volume={41}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(97)00036-1}, abstractNote={Analysis of the output characteristics of the Dual Channel EST (DC-EST) is provided for the first time in this article. It is demonstrated by analytical modelling and with the aid of two dimensional numerical simulations that the output resistance in the region of current saturation is determined by the activation of the narrow base NPN transistor in the IGBT segment. Based upon this model, the experimentally observed degradation in the output resistance with an increase in the distance between the shorts in the P-base region of the main thyristor segment can be explained. This model is shown to be consistent with the experimentally observed degradation in the output resistance with larger design rules used for device fabrication because this determines the current level at which the NPN transistor becomes activated. The observed reduction in the output resistance results in a degradation in the forward bias safe operating area.}, number={8}, journal={SOLID-STATE ELECTRONICS}, author={Sridhar, S and Baliga, BJ}, year={1997}, month={Aug}, pages={1133–1138} }
 @article{sridhar_baliga_1997, title={SIMFCT: A MOS-gated FCT with high voltage-current saturation}, volume={44}, ISSN={["1557-9646"]}, DOI={10.1109/16.641374}, abstractNote={This paper describes the SIMFCT: a new MOS-gated power device in which SIMOX technology is used to integrate a series MOSFET with a vertical FCT structure. The SIMFCT, exhibits high voltage-current saturation beyond the breakdown voltage of the lateral series MOSFET, and since it does not have a parasitic thyristor, it possesses a superior FBSOA when compared to the IGBT. The physics of device operation, results of two-dimensional numerical simulations and experimentally measured characteristics on SIMFCT structures fabricated using a nine mask SIMOX Smart Power process are presented.}, number={11}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Sridhar, S and Baliga, BJ}, year={1997}, month={Nov}, pages={2017–2021} }