@article{zeman_nemanich_sunda-meya_2014, title={Dynamics of dysprosium silicide nanostructures on Si(001) and (111) surfaces}, volume={49}, number={4}, journal={Journal of Materials Science}, author={Zeman, M. C. and Nemanich, R. J. and Sunda-Meya, A.}, year={2014}, pages={1812–1823} }
 @article{yang_zeman_nemanich_2007, title={Coarsening dynamics of nanoscale Ti-silicide islands on Si surfaces}, volume={50}, DOI={10.3938/jkps.50.575}, abstractNote={The late-stage coarsening dynamics of nanoscale Ti-silicide (TiSi2) islands on Si surfaces is explored in ultra high vacuum (UHV) by using ultraviolet photoelectron emission microscopy (UVPEEM). The UV-PEEM is employed for real-time, in-situ monitoring of the nanostructure dynamics and evolution at high temperatures. Continuous annealing at ∼1150 ◦C leads to an increase in the size of the initially nucleated silicide islands and to a reduction in the number density. By monitoring the relative position and the size of individual islands, we find that islands grow through Ostwald ripening and attractive migration and coalescence (AMC). The AMC is a new coarsening process where nearby islands are observed to migrate directly towards each other and subsequently coalesce. This process has been attributed to a growth-decay flow of the island edges driven by a non-uniform chemical potential around the islands. The non-uniform chemical potential results from a varying adatom surface concentration induced by local variations in size, number, and location of the neighboring islands. Significant shape distortions of the coarsening islands, migration of each island towards the center of mass of a group of islands, and screening of attractive migration of islands with a continuous Ti flux support our suggested model for the AMC mechanism. The mass exchange between the coarsening TiSi2 islands in the AMC process is explained in terms of a Ti adatom surface-diffusion-limited process.}, number={3}, journal={Journal of the Korean Physical Society}, author={Yang, W. C. and Zeman, M. and Nemanich, R. J.}, year={2007}, pages={575–580} }
 @article{zeman_fulton_lucovsky_nemanich_yang_2006, title={"Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy" (vol 99, pg 023519, 2006)}, volume={99}, ISSN={["0021-8979"]}, DOI={10.1063/1.2201707}, abstractNote={First Page}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Zeman, MC and Fulton, CC and Lucovsky, G and Nemanich, RJ and Yang, WC}, year={2006}, month={May} }
 @article{zeman_fulton_lucovsky_nemanich_yang_2006, title={Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy}, volume={99}, ISSN={["1089-7550"]}, DOI={10.1063/1.2163984}, abstractNote={The thermal stability of thin films (3nm) of transition-metal (TM) oxides (TiO2, ZrO2, and HfO2) grown on ultrathin (∼0.5nm) SiO2 buffer layers on Si(100) surfaces was investigated with ultraviolet photoelectron emission microscopy (UV-PEEM). The decomposition of the TM oxides was observed in the PEEM during ultrahigh-vacuum annealing at temperatures of ∼870, ∼900, and ∼1000°C for the TiO2, ZrO2, and HfO2, respectively. Following the decomposition reaction, atomic force microscopy measurements of the annealed surfaces revealed a high density of islands in the decomposed regions. The degradation of the TM oxide films is attributed to a reaction occurring at defects at the TM oxide/SiO2∕Si interfaces, which forms SiO species. Once a portion of the interfacial SiO2 layer is desorbed as a result of this reaction, Si from the substrate can diffuse into contact with the TM oxide layer, resulting in the formation of a TM silicide and the evolution of SiO. This process continues until the entire TM oxide layer is consumed and only silicide islands remain.}, number={2}, journal={JOURNAL OF APPLIED PHYSICS}, author={Zeman, MC and Fulton, CC and Lucovsky, G and Nemanich, RJ and Yang, WC}, year={2006}, month={Jan} }
 @article{yang_zeman_ade_nemanich_2003, title={Attractive migration and coalescence: A significant process in the coarsening of TiSi2 islands on the Si(111) surface}, volume={90}, ISSN={["0031-9007"]}, DOI={10.1103/physrevlett.90.136102}, abstractNote={The dynamics and coarsening of TiSi2 islands on Si(111) surfaces are studied in real time with photoelectron emission microscopy. A significant fraction of events are observed in which nearby islands move attractively toward each other and subsequently coalesce. It is proposed that attractive island migration is due to the growth-decay flow of the island edges driven by a nonuniform surface concentration around the islands. The local surface concentration is induced by the neighboring islands. This coarsening mechanism should significantly affect the evolution of the island distribution.}, number={13}, journal={PHYSICAL REVIEW LETTERS}, author={Yang, WC and Zeman, M and Ade, H and Nemanich, RJ}, year={2003}, month={Apr} }