@article{zeman_nemanich_sunda-meya_2014, title={Dynamics of dysprosium silicide nanostructures on Si(001) and (111) surfaces}, volume={49}, number={4}, journal={Journal of Materials Science}, author={Zeman, M. C. and Nemanich, R. J. and Sunda-Meya, A.}, year={2014}, pages={1812–1823} }
 @article{yang_zeman_nemanich_2007, title={Coarsening dynamics of nanoscale Ti-silicide islands on Si surfaces}, volume={50}, DOI={10.3938/jkps.50.575}, number={3}, journal={Journal of the Korean Physical Society}, author={Yang, W. C. and Zeman, M. and Nemanich, R. J.}, year={2007}, pages={575–580} }
 @article{zeman_fulton_lucovsky_nemanich_yang_2006, title={"Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy" (vol 99, pg 023519, 2006)}, volume={99}, ISSN={["0021-8979"]}, DOI={10.1063/1.2201707}, abstractNote={First Page}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Zeman, MC and Fulton, CC and Lucovsky, G and Nemanich, RJ and Yang, WC}, year={2006}, month={May} }
 @article{zeman_fulton_lucovsky_nemanich_yang_2006, title={Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy}, volume={99}, ISSN={["1089-7550"]}, DOI={10.1063/1.2163984}, abstractNote={The thermal stability of thin films (3nm) of transition-metal (TM) oxides (TiO2, ZrO2, and HfO2) grown on ultrathin (∼0.5nm) SiO2 buffer layers on Si(100) surfaces was investigated with ultraviolet photoelectron emission microscopy (UV-PEEM). The decomposition of the TM oxides was observed in the PEEM during ultrahigh-vacuum annealing at temperatures of ∼870, ∼900, and ∼1000°C for the TiO2, ZrO2, and HfO2, respectively. Following the decomposition reaction, atomic force microscopy measurements of the annealed surfaces revealed a high density of islands in the decomposed regions. The degradation of the TM oxide films is attributed to a reaction occurring at defects at the TM oxide/SiO2∕Si interfaces, which forms SiO species. Once a portion of the interfacial SiO2 layer is desorbed as a result of this reaction, Si from the substrate can diffuse into contact with the TM oxide layer, resulting in the formation of a TM silicide and the evolution of SiO. This process continues until the entire TM oxide layer is consumed and only silicide islands remain.}, number={2}, journal={JOURNAL OF APPLIED PHYSICS}, author={Zeman, MC and Fulton, CC and Lucovsky, G and Nemanich, RJ and Yang, WC}, year={2006}, month={Jan} }
 @article{yang_zeman_ade_nemanich_2003, title={Attractive migration and coalescence: A significant process in the coarsening of TiSi2 islands on the Si(111) surface}, volume={90}, ISSN={["0031-9007"]}, DOI={10.1103/physrevlett.90.136102}, abstractNote={The dynamics and coarsening of TiSi2 islands on Si(111) surfaces are studied in real time with photoelectron emission microscopy. A significant fraction of events are observed in which nearby islands move attractively toward each other and subsequently coalesce. It is proposed that attractive island migration is due to the growth-decay flow of the island edges driven by a nonuniform surface concentration around the islands. The local surface concentration is induced by the neighboring islands. This coarsening mechanism should significantly affect the evolution of the island distribution.}, number={13}, journal={PHYSICAL REVIEW LETTERS}, author={Yang, WC and Zeman, M and Ade, H and Nemanich, RJ}, year={2003}, month={Apr} }