@article{chen_lee_sarkar_gowda_misra_2007, title={A molecular memory device formed by HfO2 encapsulation of redox-active molecules}, volume={91}, ISSN={["0003-6951"]}, DOI={10.1063/1.2800824}, abstractNote={Solid state metal-insulator-molecule-metal (MIMM) devices were fabricated by encapsulating a redox-active molecular layer between a metal substrate and a dielectric thin film of atomic layer deposition (ALD) hafnium dioxide (HfO2). Redox properties of molecules are preserved after atomic layer deposition. The leakage current of devices is greatly improved by incorporating the ALD HfO2 thin layer. Capacitance measurements of these MIMM devices show a large frequency dispersion indicating the charging and discharging of the molecular layer.}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Chen, Zhong and Lee, Bongmook and Sarkar, Smita and Gowda, Srivardhan and Misra, Veena}, year={2007}, month={Oct} }
 @article{gowda_mathur_misra_2007, title={Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates}, volume={90}, ISSN={["0003-6951"]}, DOI={10.1063/1.2720337}, abstractNote={In this work, monolayers of the redox-active molecules, with cationic- accessible states, were incorporated on p- and n-type silicons of varying doping concentrations. The redox voltages and kinetics were found to be strongly dependent on the silicon doping concentrations, and ambient light in case of n-Si substrate, while there was no significant impact of substrate doping concentration or ambient light in case of p-Si substrate. These results suggest the redox energy states in the molecule align within the valence band of the silicon substrate. Based on this, a model for electronic coupling and charge transfer at the molecule-semiconductor interfaces is proposed.}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Gowda, Srivardhan and Mathur, Guru and Misra, Veena}, year={2007}, month={Apr} }
 @article{gowda_mathur_li_surthi_misra_2006, title={Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs}, volume={5}, ISSN={["1941-0085"]}, DOI={10.1109/TNANO.2006.874046}, abstractNote={Redox-active molecular monolayers were incorporated in silicon MOSFETs to obtain hybrid silicon/molecular FETs. Cyclic voltammetry and FET characterization techniques were used to study the properties of these hybrid devices. The redox-active molecules have tunable charge states, which are quantized at room temperature and can be accessed at relatively low voltages. The discrete molecular states were manifested in the drain current and threshold voltage characteristics of the device, confirming the presence of distinct energy levels within the molecules at room temperature. This study demonstrates the modulation of Si-MOSFETs' drain currents via redox-active molecular monolayers. The single-electron functionality provided by the redox-active molecules is ultimately scalable to molecular dimensions, and this approach can be extended to nanoscale field-effect devices including those based on carbon nanotubes. The molecular states coupled with CMOS devices can be utilized for low-voltage, multiple-state memory and logic applications and can extend the impact of silicon-based technologies.}, number={3}, journal={IEEE TRANSACTIONS ON NANOTECHNOLOGY}, author={Gowda, Srivardhan and Mathur, Guru and Li, Qiliang and Surthi, Shyam and Misra, Veena}, year={2006}, month={May}, pages={258–264} }
 @article{gowda_mathur_li_surthi_misra_2005, title={Approach for investigating lateral conduction in self-assembled monolayers}, volume={87}, ISSN={["1077-3118"]}, DOI={10.1063/1.2152112}, abstractNote={Lateral conductivity within a monolayer is a key factor in the implementation of emerging dense molecular memory devices since it determines the degree of cross talk between cells. Lateral interactions within a monolayer could also lead to loss of charge through defective sites. Existing characterization techniques are limited to probing the electrical communication between molecules and attached electrodes. In this paper we demonstrate a test structure consisting of n type and p type doped silicon islands to isolate vertical conduction from lateral conduction. This structure is a useful characterization tool for tailoring the intrinsic properties of the molecules for information storage.}, number={26}, journal={APPLIED PHYSICS LETTERS}, author={Gowda, S and Mathur, G and Li, Q and Surthi, S and Misra, V}, year={2005}, month={Dec} }
 @misc{misra_gowda_mathur_2005, title={Hybrid molecular memory devices and methods of use thereof}, volume={6,958,485}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Misra, V. and Gowda, S. and Mathur, G.}, year={2005} }
 @article{mathur_gowda_li_surthi_zhao_misra_2005, title={Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness}, volume={4}, ISSN={["1941-0085"]}, DOI={10.1109/TNANO.2004.842056}, abstractNote={Self-assembled monolayers of redox-active molecules were formed on varying thickness of silicon dioxide (SiO/sub 2/). Cyclic voltammetry (CyV) and impedance spectroscopy (capacitance-voltage and conductance-voltage) techniques were used to characterize these structures. The charge retention properties of these molecule-oxide-silicon capacitor structures were studied by applying oxidizing voltages in two successive CyV scans without applying a reducing voltage in between the two scans. A variation of this technique, wherein a reducing voltage is applied in the second scan, was also employed. The wait time between the two scans was varied from 0 to 300 s. The number of molecules oxidized (or reduced) in the second scan increased (or decreased) with increasing wait time, which is attributed to increasing charge leakage with increasing time. The retention properties of these structures were studied and correlated to increasing oxide thickness. It was observed that the retention times increased with increasing oxide thickness if the voltage applied during the wait time was in between the oxidation and reduction peak voltages. The molecular scalability and ability to tune the retention times by varying the oxide thickness make these Si/molecular hybrid devices attractive candidates for next-generation memory applications.}, number={2}, journal={IEEE TRANSACTIONS ON NANOTECHNOLOGY}, author={Mathur, G and Gowda, S and Li, QL and Surthi, S and Zhao, Q and Misra, V}, year={2005}, month={Mar}, pages={278–283} }
 @article{zhao_luo_surthi_li_mathur_gowda_larson_johnson_misra_2005, title={Redox-active monolayers on nano-scale silicon electrodes}, volume={16}, ISSN={["1361-6528"]}, DOI={10.1088/0957-4484/16/2/013}, abstractNote={Uniform arrays of nano-scale electrolyte–molecule–silicon capacitors have been successfully fabricated. This was done by a combination of reactive ion etch and a selective wet etch through an anodic aluminium oxide mask to form nano-holes in silicon oxide/silicon nitride insulator layers on silicon. Self-assembled monolayers of 4-ferrocenylbenzyl alcohol were then attached to the exposed silicon surfaces at the bottom of the nano-holes. Characterization by conventional capacitance and conductance techniques showed very high capacitance and conductance peaks near −0.6 V, that were attributed to the charging and discharging of electrons into and from discrete levels in the monolayer owing to the presence of the redox-active ferrocenes.}, number={2}, journal={NANOTECHNOLOGY}, author={Zhao, Q and Luo, Y and Surthi, S and Li, QL and Mathur, G and Gowda, S and Larson, PR and Johnson, MB and Misra, V}, year={2005}, month={Feb}, pages={257–261} }
 @article{li_mathur_gowda_surthi_zhao_yu_lindsey_bocian_misra_2004, title={Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon}, volume={16}, ISSN={["1521-4095"]}, DOI={10.1002/adma.200305680}, abstractNote={An alternative strategy for achieving multi‐bit functionality, which uses mixed self‐assembled monolayers of a benzyl alcohol‐tethered ferrocene (Fc‐BzOH) and a benzyl alcohol‐tethered porphyrin (Por‐BzOH) on silicon surfaces to achieve a four‐state (2‐bit) memory element, is presented. The four states include the neutral state and three distinct cationic states obtained upon oxidation of Fc‐BzOH (monopositive) and Por‐BzOH (monopositive, dipositive) molecules. Conventional cyclic voltammetry, capacitance, and conductance methods have been used to characterize the mixed monolayer.}, number={2}, journal={ADVANCED MATERIALS}, author={Li, QL and Mathur, G and Gowda, S and Surthi, S and Zhao, Q and Yu, LH and Lindsey, JS and Bocian, DF and Misra, V}, year={2004}, month={Jan}, pages={133-+} }
 @article{li_surthi_mathur_gowda_zhao_sorenson_tenent_muthukumaran_lindsey_misra_2004, title={Multiple-bit storage properties of porphyrin monolayers on SiO2}, volume={85}, ISSN={["1077-3118"]}, DOI={10.1063/1.1782254}, abstractNote={Hybrid molecule-silicon capacitors have been fabricated by the self-assembly of a monolayer of porphyrin molecules on a silicon oxide surface. The porphyrin employed [5-(4-dihydroxyphosphorylphenyl)-10,15,20-trimesitylporphinatozinc(II)] attaches to silicon oxide via a phosphonate linkage. Cyclic voltammetry current and capacitance/conductance measurements have been used to characterize the capacitors. The presence of multiple distinct peaks in current density and capacitance/conductance measurements are associated with oxidation and reduction of the molecular monolayer. The charge-storage states of the capacitor indicate applicability for use in multiple-bit memory devices.}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Li, QL and Surthi, S and Mathur, G and Gowda, S and Zhao, Q and Sorenson, TA and Tenent, RC and Muthukumaran, K and Lindsey, JS and Misra, V}, year={2004}, month={Sep}, pages={1829–1831} }
 @article{li_surthi_mathur_gowda_misra_sorenson_tenent_kuhr_tamaru_lindsey_et al._2003, title={Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications}, volume={83}, ISSN={["0003-6951"]}, DOI={10.1063/1.1584088}, abstractNote={Hybrid silicon capacitors have been successfully fabricated by attaching monolayers of redox-active molecules via self-assembly to ultrathin silicon dioxide layers. Capacitance, conductance, and cyclic voltammetric measurements have been used to characterize these capacitors. The presence of distinct capacitance and conductance peaks associated with oxidation and reduction of the monolayers at low gate voltages indicates discrete electron storage states for these capacitors, suggesting their feasibility in memory devices. The inherent molecular scalability and low-power operation coupled with existing silicon technology support the approach of hybrid molecule-silicon devices as a strong candidate for next generation electronic devices.}, number={1}, journal={APPLIED PHYSICS LETTERS}, author={Li, QL and Surthi, S and Mathur, G and Gowda, S and Misra, V and Sorenson, TA and Tenent, RC and Kuhr, WG and Tamaru, S and Lindsey, JS and et al.}, year={2003}, month={Jul}, pages={198–200} }