@article{nagapudi_sunkavalli_baliga_1998, title={Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT}, volume={45}, ISSN={["1557-9646"]}, DOI={10.1109/16.669579}, abstractNote={In this paper, the dependence of the forward biased safe operating area (FBSOA) on the collector structures of the dielectrically-isolated (DI) lateral insulated gate bipolar transistor (LIGBT) has been analyzed. In addition to the on-state and switching characteristics, pulsed measurements were performed to determine the FBSOA of these devices. Two-dimensional (2-D) numerical simulations were performed to understand the physics behind the operation of devices fabricated with various collector designs. These studies reveal that some of the structures behave like the conventional LIGBT, while others behave like the LDMOSFET with respect to their FBSOA. Some of the structures also exhibit a unique high-voltage blocking ability while carrying current, while having much smaller breakdown voltages.}, number={5}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Nagapudi, V and Sunkavalli, R and Baliga, BJ}, year={1998}, month={May}, pages={1155–1161} }
 @article{sunkavalli_baliga_1997, title={Analysis of on-state carrier distribution in the DI-LIGBT}, volume={41}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(96)00247-X}, abstractNote={The on-state carrier distribution in the drift region of the DI-LIGBT with thin silicon layers is studied in this paper. Numerical simulations indicate that carrier enhancement due to the formation of an accumulation region underneath the gate near the emitter has a strong impact on the on-state carrier distribution. This results in improved on-state characeristics by reducing the middle region voltage drop, due to the enhanced conductivity modulation of the drift region. A simple one-dimensional analytical modeling is carried out to study the effect of this carrier enhancement on on-state voltage drop. The results are verified by measurements performed on DI-LIGBTs fabricated on 5 and 10 μm thick silicon layers.}, number={5}, journal={SOLID-STATE ELECTRONICS}, author={Sunkavalli, R and Baliga, BJ}, year={1997}, month={May}, pages={733–738} }
 @article{sunkavalli_baliga_tamba_1997, title={Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes}, volume={44}, ISSN={["0018-9383"]}, DOI={10.1109/16.641373}, abstractNote={The concept of the RESURF DI lateral merged PiN Schottky (LMPS) diodes is introduced and experimentally demonstrated. The LMPS diode combines the advantages of fast switching times of Schottky diodes with the low forward drops exhibited by LPiN diodes. An increase in the ratio of Schottky area relative to the p-n junction area is shown to result in superior reverse recovery characteristics at the expense of an increase in the forward voltage drop. This tradeoff between forward drop and switching speed is achieved in a simple manner by varying the relative areas of the Schottky and p-n junction regions during device design. Since lifetime control is not a viable option in integrated diodes used in power IC's, the LMPS concept allows tailoring the characteristics of integrated power diodes to the application frequency for the first time.}, number={11}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Sunkavalli, R and Baliga, BJ and Tamba, A}, year={1997}, month={Nov}, pages={2011–2016} }