Nathan Gregory Stoddard

Stoddard, N., Duscher, G., Windl, W., & Rozgonyi, G. (2005). A new understanding of near-threshold damage for 200 keV irradiation in silicon. JOURNAL OF MATERIALS SCIENCE, 40(14), 3639–3650. https://doi.org/10.1007/s10853-005-1059-z

Stoddard, N., Pichler, P., Duscher, G., & Windl, W. (2005). Ab initio identification of the nitrogen diffusion mechanism in silicon. Physical Review Letters, 95(2).

Stoddard, N., Duscher, G., Karoui, A., Stevie, F., & Rozgonyi, G. (2005). Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment. JOURNAL OF APPLIED PHYSICS, 97(8). https://doi.org/10.1063/1.1866480

Stoddard, N., Karoui, A., Duscher, G., Kvit, A., & Rozgonyi, G. (2003). In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon. ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136. https://doi.org/10.1149/1.1614471