@article{bunker_garcia_russell_2005, title={Scanning electron microscopy cathodoluminescence studies of piezoelectric fields in an InGaN/GaN quantum-well light-emitting diode}, volume={86}, ISSN={["1077-3118"]}, DOI={10.1063/1.1868886}, abstractNote={Scanning electron microscopy (SEM) cathodoluminescence (CL) experiments were used to determine the existence and direction of piezoelectric fields in a commercial InGaN multiple-quantum-well (MQW) light-emitting diode (LED). The CL emission peak showed a blueshift with increasing reverse bias due to the cancellation of the piezoelectric field. A full compensation of the piezoelectric field was observed followed by a redshift with a further increase of reverse bias, indicating that flat-band conditions had been reached. We determined the piezoelectric field points in the [000-1] direction and estimated the magnitude to be approximately 1MV∕cm. SEM-CL carrier generation density variation and electroluminescence experiments were also used to confirm the existence of a piezoelectric field in the InGaN MQW LED.}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Bunker, KL and Garcia, R and Russell, PE}, year={2005}, month={Feb} }
 @article{edmond_abare_bergman_bharathan_bunker_emerson_haberern_ibbetson_leung_russell_et al._2004, title={High efficiency GaN-based LEDs and lasers on SiC}, volume={272}, number={04-Jan}, journal={Journal of Crystal Growth}, author={Edmond, J. and Abare, A. and Bergman, M. and Bharathan, J. and Bunker, K. L. and Emerson, D. and Haberern, K. and Ibbetson, J. and Leung, M. and Russell, P. and et al.}, year={2004}, pages={242–250} }
 @article{gonzalez_silva_bunker_batchelor_russell_2003, title={Electrical characterization of InGaN quantum well p-n heterostructures}, volume={34}, ISSN={["0026-2692"]}, DOI={10.1016/S0026-2692(03)00072-7}, abstractNote={In this work, two methods for electrical characterization of InGaN quantum well p–n heterostructures at the nanometer level are presented. Cross-sectional Electrical Force Microscopy and High Resolution Electron Beam Induced Current (HR-EBIC) are used to study and identify regions of the cross-sectional surface of InGaN heterostructures with different types of electrical conductivity, the location of the InGaN quantum well, the location of the p–n junction, and the depletion layer. HR-EBIC was implemented in a Scanning Transmission Electron Microscope to take advantage of the high resolution chemical imaging capabilities of this microscope, such as Z-Contrast and Energy Dispersive X-ray Spectroscopy, and the small spread of the high energy electron beam in the electron transparent thin sample that allows electron beam induced current imaging with nanometer resolution.}, number={5-8}, journal={MICROELECTRONICS JOURNAL}, author={Gonzalez, JC and Silva, MIN and Bunker, KL and Batchelor, AD and Russell, PE}, year={2003}, pages={455–457} }