@article{pavlovska_torres_edwards_bauer_smith_doak_tsong_thomson_davis_1999, title={Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy}, volume={176}, number={1}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Pavlovska, A. and Torres, V. M. and Edwards, J. L. and Bauer, E. and Smith, D. J. and Doak, R. B. and Tsong, I. S. T. and Thomson, D. B. and Davis, R. F.}, year={1999}, pages={469–473} }
 @article{torres_edwards_wilkens_smith_doak_tsong_1999, title={Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers}, volume={74}, ISSN={["0003-6951"]}, DOI={10.1063/1.123431}, abstractNote={Epitaxial AlN films were grown on 6H–SiC(0001) substrates using an ammonia supersonic seeded beam. The films grown on substrates etched in hydrogen at high temperatures were shown by ion beam channeling to exhibit a higher degree of order relative to those grown on the as-received substrates. Cross-sectional electron microscopy revealed sharper SiC–AlN interfaces with extended flat terraces. In particular, very few stacking mismatch boundaries were observed to originate from the 1.5 nm steps which correspond to the 6H stacking sequence of the substrate.}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Torres, VM and Edwards, JL and Wilkens, BJ and Smith, DJ and Doak, RB and Tsong, IST}, year={1999}, month={Feb}, pages={985–987} }
 @article{pavlovska_torres_bauer_doak_tsong_thomson_davis_1999, title={Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source}, volume={75}, ISSN={["0003-6951"]}, DOI={10.1063/1.124575}, abstractNote={A study of the homoepitaxial growth of GaN(0001) layers was conducted in situ and in real time using the low-energy electron microscope. The Ga flux was supplied by an evaporative cell while the NH3 flux was supplied via a seeded-beam supersonic jet source. At growth temperatures of 665 °C and 677 °C, smooth GaN(0001) layers with well-defined step structures were grown on GaN(0001) substrates prepared by metalorganic chemical vapor deposition. In general, nonfaceted homoepitaxial layers were achieved when the Ga/NH3 flux ratios exceeded 2, starting with a Ga-covered substrate surface, in the temperature range of 655–710 °C.}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Pavlovska, A and Torres, VM and Bauer, E and Doak, RB and Tsong, IST and Thomson, DB and Davis, RF}, year={1999}, month={Aug}, pages={989–991} }
 @article{torres_stevens_edwards_smith_doak_tsong_1997, title={Growth of AlN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia}, volume={71}, ISSN={["0003-6951"]}, DOI={10.1063/1.119895}, abstractNote={We have grown AlN and GaN layers on 4° off-axis 6H–SiC (0001) substrates using He supersonic beams seeded with NH3. The AlN films were used as buffer layers for GaN growth at 800°C. We estimate 39% incorporation of the NH3 molecules impinging on the substrate surface during GaN film growth. High structural quality of the epitaxial GaN layers was confirmed by transmission electron microscopy and electron channeling patterns. The GaN films, which had a thickness of ∼105 nm, contained a defect density of ∼2×1010 cm−2.}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Torres, VM and Stevens, M and Edwards, JL and Smith, DJ and Doak, RB and Tsong, IST}, year={1997}, month={Sep}, pages={1365–1367} }