Eric Porter Carlson

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

MIIIN based materials and methods and apparatus for producing same

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

APPLIED PHYSICS LETTERS, 81(10), 1797–1799.

Ion implantation into gallium nitride

[Review of ]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 351(5), 349–385.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

JOURNAL OF APPLIED PHYSICS, 86(10), 5584–5593.

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245.

Optical activation of Be implanted into GaN

APPLIED PHYSICS LETTERS, 73(12), 1622–1624.

Ion implantation of epitaxial GaN films: Damage, doping and activation

Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., … Hunn, J. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 463–466.

Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon

Cuomo, J. J., Williams, N. M., Hanser, A. D., Carlson, E. P., & Thomas, D. T. Washington, DC: U.S. Patent and Trademark Office.