Works (18)

2008 | patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2004 | patent

MIIIN based materials and methods and apparatus for producing same

Cuomo, J. J., Williams, N. M., Hanser, A. D., Carlson, E. P., & Thomas, D. T. (2004, August 31). Washington, DC: U.S. Patent and Trademark Office.

By: J. Cuomo, N. Williams, A. Hanser, E. Carlson & D. Thomas

Source: NC State University Libraries
Added: August 6, 2018

2000 | patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2000, November 21). Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2001 | patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001, February 9). Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

Applied Physics Letters, 81(10), 1797–1799.

By: M. Park, J. Maria, J. Cuomo, Y. Chang, J. Muth, R. Kolbas, R. Nemanich, E. Carlson, J. Bumgarner

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Ion implantation into gallium nitride

Physics Reports, 351(5), 349–385.

By: C. Ronning, E. Carlson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 | patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001, January 23). Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

By: T. Gehrke, K. Linthicum, P. Rajagopal, E. Preble, E. Carlson, B. Robin, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal, T. Smith, D. Batchelor, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

By: K. Linthicum, T. Gehrke, D. Thomson, K. Tracy, E. Carlson, T. Smith, T. Zheleva, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

Journal of Applied Physics, 86(10), 5584–5593.

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H) SiC substrates

Journal of Electronic Materials, 27(4), 238–245.

By: A. Hanser, C. Wolden, W. Perry, T. Zheleva, E. Carlson, A. Banks, R. Therrien, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Optical activation of Be implanted into GaN

Applied Physics Letters, 73(12), 1622–1624.

By: C. Ronning, E. Carlson, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

ION Implantation of epitaxial GaN films: damage, doping and activation

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 463–466.

By: N. Parikh, A. Suvkhanov, M. Lioubtchenko, E. Carlson, M. Bremser, D. Bray, R. Davis, J. Hunn

Source: NC State University Libraries
Added: August 6, 2018

| patent

Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon

Cuomo, J. J., Williams, N. M., Hanser, A. D., Carlson, E. P., & Thomas, D. T. Washington, DC: U.S. Patent and Trademark Office.

By: J. Cuomo, N. Williams, A. Hanser, E. Carlson & D. Thomas

Source: NC State University Libraries
Added: August 6, 2018