@misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2008, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={7,378,684}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2008} }
 @misc{cuomo_williams_hanser_carlson_thomas_2004, title={MIIIN based materials and methods and apparatus for producing same}, volume={6,784,085}, number={2004 Aug. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Williams, N. M. and Hanser, A. D. and Carlson, E. P. and Thomas, D. T.}, year={2004}, month={Aug} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2002, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,462,355}, number={2002 Oct. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2002} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2002, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby}, volume={6,376,339}, number={2002 Apr. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2002} }
 @article{park_maria_cuomo_chang_muth_kolbas_nemanich_carlson_bumgarner_2002, title={X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy}, volume={81}, DOI={10.1063/1.1506781}, number={10}, journal={Applied Physics Letters}, author={Park, M. and Maria, J. P. and Cuomo, J. J. and Chang, Y. C. and Muth, J. F. and Kolbas, R. M. and Nemanich, R. J. and Carlson, E. and Bumgarner, J.}, year={2002}, pages={1797–1799} }
 @article{ronning_carlson_davis_2001, title={Ion implantation into gallium nitride}, volume={351}, DOI={10.1016/S0370-1573(00)00142-3}, number={5}, journal={Physics Reports}, author={Ronning, C. and Carlson, E. P. and Davis, R. F.}, year={2001}, pages={349–385} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2001, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,177,688}, number={2001 Jan. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2001} }
 @article{gehrke_linthicum_rajagopal_preble_carlson_robin_davis_2000, title={Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition}, volume={338}, number={3}, journal={Materials Science Forum}, author={Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Preble, E. A. and Carlson, E. P. and Robin, B. M. and Davis, R. F.}, year={2000}, pages={1491–1494} }
 @article{ronning_hofsass_stotzler_deicher_carlson_hartlieb_gehrke_rajagopal_davis_2000, title={Photoluminescence characterization of Mg implanted GaN}, volume={5}, number={2000}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Ronning, C. and Hofsass, H. and Stotzler, A. and Deicher, M. and Carlson, E. P. and Hartlieb, P. J. and Gehrke, T. and Rajagopal, P. and Davis, R. F.}, year={2000}, pages={U622–628} }
 @article{ronning_linthicum_carlson_hartlieb_thomson_gehrke_davis_1999, title={Characterization of Be-implanted GaN annealed at high temperatures}, volume={4S1}, number={G3.17}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Ronning, C. and Linthicum, K. J. and Carlson, E. P. and Hartlieb, P. J. and Thomson, D. B. and Gehrke, T. and Davis, R. F.}, year={1999} }
 @article{linthicum_gehrke_thomson_carlson_rajagopal_smith_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride thin films}, volume={75}, DOI={10.1063/1.124317}, number={2}, journal={Applied Physics Letters}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Smith, T. and Batchelor, D. and Davis, R.}, year={1999}, pages={196–198} }
 @article{zheleva_smith_thomson_gehrke_linthicum_rajagopal_carlson_ashmawi_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures}, volume={4S1}, number={G3.38}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Carlson, E. and Ashmawi, W. M. and Davis, R. F.}, year={1999} }
 @article{linthicum_gehrke_thomson_tracy_carlson_smith_zheleva_zorman_mehregany_davis_1999, title={Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques}, volume={4S1}, number={G4.9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Tracy, K. M. and Carlson, E. P. and Smith, T. P. and Zheleva, T. S. and Zorman, C. A. and Mehregany, M. and Davis, R. F.}, year={1999} }
 @article{king_carlson_therrien_christman_nemanich_davis_1999, title={X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms}, volume={86}, DOI={10.1063/1.371564}, number={10}, journal={Journal of Applied Physics}, author={King, S. W. and Carlson, E. P. and Therrien, R. J. and Christman, J. A. and Nemanich, R. J. and Davis, R. F.}, year={1999}, pages={5584–5593} }
 @article{hanser_wolden_perry_zheleva_carlson_banks_therrien_davis_1998, title={Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H) SiC substrates}, volume={27}, DOI={10.1007/s11664-998-0394-7}, number={4}, journal={Journal of Electronic Materials}, author={Hanser, A. D. and Wolden, C. A. and Perry, W. G. and Zheleva, T. S. and Carlson, E. P. and Banks, A. D. and Therrien, R. J. and Davis, R. F.}, year={1998}, pages={238–245} }
 @article{ronning_carlson_thomson_davis_1998, title={Optical activation of Be implanted into GaN}, volume={73}, DOI={10.1063/1.122225}, number={12}, journal={Applied Physics Letters}, author={Ronning, C. and Carlson, E. P. and Thomson, D. B. and Davis, R. F.}, year={1998}, pages={1622–1624} }
 @article{parikh_suvkhanov_lioubtchenko_carlson_bremser_bray_davis_hunn_1997, title={ION Implantation of epitaxial GaN films: damage, doping and activation}, volume={127}, DOI={10.1016/S0168-583X(97)00076-1}, number={1997 May}, journal={Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms}, author={Parikh, N. and Suvkhanov, A. and Lioubtchenko, M. and Carlson, E. and Bremser, M. and Bray, D. and Davis, R. F. and Hunn, J.}, year={1997}, pages={463–466} }
 @misc{cuomo_williams_hanser_carlson_thomas, title={Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon}, volume={6,692,568}, number={2004 Feb. 17}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Williams, N. M. and Hanser, A. D. and Carlson, E. P. and Thomas, D. T.} }