@misc{schlesser_noveski_sitar_2010, title={Seeded growth process for preparing aluminum nitride single crystals}, volume={7,678,195}, number={2010 Mar. 16}, author={Schlesser, R. and Noveski, V. and Sitar, Z.}, year={2010} }
 @misc{schlesser_dalmau_noveski_sitar_2009, title={Dense, shaped articles constructed of a refractory material and methods of preparing such articles}, volume={7,632,454}, number={1999 Dec. 15}, author={Schlesser, R. and Dalmau, R. F. and Noveski, V. and Sitar, Z.}, year={2009} }
 @article{noveski_schlesser_mahajan_beaudoin_sitar_2004, title={Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere}, volume={9}, DOI={10.1557/s1092578300000375}, abstractNote={AlN single crystals were grown on AlN/SiC seeds by sublimation of AlN powder in TaC crucibles in a nitrogen atmosphere. The seeds were produced by metallorganic chemical vapor deposition (MOCVD) of AlN on SiC crystals. The influence of growth temperature, growth time and source-to-seed distance on the crystallinity and the crystal growth rate were investigated. Crystals were grown in an RF heated sublimation reactor at growth temperatures ranging from 1800-2000°C, at a pressure of 600 Torr, nitrogen flow-rate of 100 sccm and source-to-seed distances of 10 and 35 mm. At 1870°C and a source-to-seed distance of 35 mm, isolated crystals were observed with few instances of coalescence. At 1930°C, a source-to-seed distance of 10 mm and longer growth times (~30 hrs), crystal coalescence was achieved. Above 1930°C, the decomposition of SiC was evidently affecting the growth morphology and resulted in growth of polycrystalline AlN. After an initial nucleation period, the observed growth rates (10-30 µm/hr) were in close agreement with predictions of a growth model that assumed gas-phase diffusion controlled growth. Optical and electron microscope observations revealed step-flow growth, while X-ray diffraction results showed the single crystal nature of the grown material. Single crystalline AlN was grown over surface areas of 200-300 mm2 and was transparent and essentially colorless.}, number={2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Noveski, V. and Schlesser, R. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2004} }
 @article{strassburg_senawiratne_dietz_haboeck_hoffmann_noveski_dalmau_schlesser_sitar_2004, title={The growth and optical properties of large, high-quality AlN single crystals}, volume={96}, ISSN={["1089-7550"]}, DOI={10.1063/1.1801159}, abstractNote={The effect of impurities and defects on the optical properties of AlN was investigated. High-quality AlN single crystals of more than 20mm2 size were examined. Different crucible materials and growth procedures were applied to the growth of bulk AlN by physical vapor transport method to vary the defect and the impurity concentrations. The crystalline orientation was investigated by Raman spectroscopy. Glow discharge mass spectrometry was used to determine the trace concentration of the incorporated impurities such as oxygen and carbon. The photoluminescence emission and absorption properties of the crystals revealed bands around 3.5 and 4.3eV at room temperature. Absorption edges ranging between 4.1 and 5.95eV were observed. Since no straight correlation of the oxygen concentration was obtained, a major contribution of oxygen or oxygen-related impurities was ruled out to generate the observed emission and absorption bands in the Ultraviolet spectral range. The carbon-related impurities and intrinsic defects might contribute to the observed optical properties. The absorption coefficient for AlN single crystals has been derived for the spectral range below the band edge.}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Strassburg, M and Senawiratne, J and Dietz, N and Haboeck, U and Hoffmann, A and Noveski, V and Dalmau, R and Schlesser, R and Sitar, Z}, year={2004}, month={Nov}, pages={5870–5876} }