@article{narayan_nori_ramachandran_prater_2009, title={The synthesis and magnetic properties of a nanostructured Ni-MgO system}, volume={61}, ISSN={["1543-1851"]}, DOI={10.1007/s11837-009-0093-8}, number={6}, journal={JOM}, author={Narayan, J. and Nori, Sudhakar and Ramachandran, S. and Prater, J. T.}, year={2009}, month={Jun}, pages={76–81} }
 @article{ramachandran_prater_sudhakar_kumar_narayan_2008, title={Magnetic properties of epitaxial oxide heterostructures}, volume={145}, ISSN={["1879-2766"]}, DOI={10.1016/j.ssc.2007.10.005}, abstractNote={Diluted Magnetic Semiconductors (DMS) are of great interest as injection sources for spin-polarized currents into semiconductors. Epitaxial devices have been synthesized with an intermediate spacer layer of the same semiconductor (zinc oxide, ZnO) used to produce the DMS material (ZnCoO) ensuring a homoepitaxial junction to help reduce the interface states and conduction mismatch. We observe a large magnetoresistance of about 32% in the devices at low temperatures. The present work suggests that spin polarized transport could be achieved with DMS materials acting as the source of injected spins into a non-magnetic host.}, number={1-2}, journal={SOLID STATE COMMUNICATIONS}, author={Ramachandran, S. and Prater, J. T. and Sudhakar, N. and Kumar, D. and Narayan, J.}, year={2008}, month={Jan}, pages={18–22} }
 @article{chakraborti_ramachandran_trichy_narayan_prater_2007, title={Magnetic, electrical, and microstructural characterization of ZnO thin films codoped with Co and Cu}, volume={101}, number={5}, journal={Journal of Applied Physics}, author={Chakraborti, D. and Ramachandran, S. and Trichy, G. and Narayan, J. and Prater, J. T.}, year={2007} }
 @article{saripalli_pei_biggerstaff_ramachandran_duscher_johnson_zeng_dandu_jin_barlage_2007, title={Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications}, volume={90}, ISSN={["1077-3118"]}, DOI={10.1063/1.2741123}, abstractNote={Contact selected area regrowth of GaN was performed by metal organic chemical vapor deposition using a silicon nitride dielectric hard mask to define plasma etched recesses and to define source-drain regions. A low temperature regrowth process at 750–850°C was adopted to limit lateral overgrowth. High resolution electron microscopy images and selected area diffraction confirmed the regrowth selectivity and revealed that the low temperature regrown GaN is epitaxial and has a wurtzite crystal structure. I-V characteristics of the fabricated metal oxidesemiconductor field effect transistor show enhancement mode operation.}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Saripalli, Y. N. and Pei, L. and Biggerstaff, T. and Ramachandran, S. and Duscher, G. J. and Johnson, M. A. L. and Zeng, C. and Dandu, K. and Jin, Y. and Barlage, D. W.}, year={2007}, month={May} }
 @article{prater_ramachandran_tiwari_narayan_2006, title={Co-doped ZnO dilute magnetic semiconductor}, volume={35}, ISSN={["0361-5235"]}, DOI={10.1007/BF02692539}, number={5}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Prater, JT and Ramachandran, S and Tiwari, A and Narayan, J}, year={2006}, month={May}, pages={852–856} }
 @article{ramachandran_narayan_prater_2006, title={Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors}, volume={88}, number={24}, journal={Applied Physics Letters}, author={Ramachandran, S. and Narayan, J. and Prater, J. T.}, year={2006} }
 @article{chugh_ramachandran_tiwari_narayan_2006, title={Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001)}, volume={35}, ISSN={["1543-186X"]}, DOI={10.1007/BF02692537}, number={5}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Chugh, Amit and Ramachandran, S. and Tiwari, A. and Narayan, J.}, year={2006}, month={May}, pages={840–845} }
 @article{tiwari_bhosle_ramachandran_sudhakar_narayan_budak_gupta_2006, title={Ferromagnetism in Co doped CeO2: Observation of a giant magnetic moment with a high Curie temperature}, volume={88}, number={14}, journal={Applied Physics Letters}, author={Tiwari, A. and Bhosle, V. M. and Ramachandran, S. and Sudhakar, N. and Narayan, J. and Budak, S. and Gupta, A.}, year={2006} }
 @article{ramachandran_chugh_tiwari_narayan_2006, title={Growth of highly conducting epitaxial ZnO-Pt-ZnO heterostructure on alpha-Al2O3 (0001)}, volume={291}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2006.02.010}, abstractNote={Here we report the growth of epitaxial ZnO–Pt–ZnO trilayer structures on sapphire (0 0 0 1) substrate by using pulsed laser deposition technique. These structures were characterized using X-ray diffraction, conventional and high-resolution transmission electron microscopy, STEM (scanning Transmission Electron microscopy-Atomic number) Z-contrast, optical transmittance and electrical resistivity measurements. X-ray diffraction and TEM experiments revealed the epitaxial nature of these structures, the orientation relationship being: 〈1 1 1〉pt||〈0 0 0 1〉ZnO||〈0 0 0 1〉〈0 0 0 1〉sapphire (out of plane) and 〈1 1 0〉pt||〈2 1¯ 1¯ 0〉ZnO||〈0 1 1¯ 0〉sapphire (in Plane) for the trilayer structure. Electrical and optical measurements showed that these heterostructures exhibit quite good electrical conductivity and at the same time possess moderate optical transmittance.}, number={1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Ramachandran, S. and Chugh, A. and Tiwari, A. and Narayan, J.}, year={2006}, month={May}, pages={212–217} }
 @article{ramachandran_jung_narayan_conrad_2006, title={Regular and high resolution transmission electron microscopy observations on the precipitates in a naturally aged Al-Mg-Si alloy AA6022}, volume={435}, journal={Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing}, author={Ramachandran, S. and Jung, K. and Narayan, J. and Conrad, H.}, year={2006}, pages={693–697} }
 @article{conrad_ramachandran_jung_narayan_2006, title={Transmission electron microscopy observations on the microstructure of naturally aged Al-Mg-Si alloy AA6022 processed with an electric field}, volume={41}, ISSN={["1573-4803"]}, DOI={10.1007/s10853-006-0840-y}, number={22}, journal={JOURNAL OF MATERIALS SCIENCE}, author={Conrad, H. and Ramachandran, S. and Jung, K. and Narayan, J.}, year={2006}, month={Nov}, pages={7555–7561} }
 @article{ramachandran_tiwari_narayan_2004, title={Origin of room-temperature ferromagnetism in cobalt-doped ZnO}, volume={33}, ISSN={["1543-186X"]}, DOI={10.1007/s11664-004-0156-0}, number={11}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Ramachandran, S and Tiwari, A and Narayan, J}, year={2004}, month={Nov}, pages={1298–1302} }
 @article{ramachandran_tiwari_narayan_2004, title={Zn0.9Co0.1O-based diluted magnetic semiconducting thin films}, volume={84}, ISSN={["1077-3118"]}, DOI={10.1063/1.1764936}, abstractNote={Here we report a systematic study of structural, optical, and magnetic measurements on epitaxial Zn0.9Co0.1O films grown on c-plane sapphire single crystal, at various temperatures (500–650°C), using pulsed-laser deposition. The main emphasis in this work has been on the correlation of microstructure with properties, specifically with magnetic properties and the fate of cobalt ions into substitutional sites versus precipitates. The reasons for room-temperature ferromagnetism are explored, and convincingly proved to be one of the inherent properties of the material. Most importantly, the presence of nanoclusters of any magnetic phase was ruled out. This was determined by high-resolution transmission electron microscopy, coupled with electron energy loss spectroscopy and STEM-Z (scanning transmission electron microscopy-atomic number) contrast studies.}, number={25}, journal={APPLIED PHYSICS LETTERS}, author={Ramachandran, S and Tiwari, A and Narayan, J}, year={2004}, month={Jun}, pages={5255–5257} }