Seann M. Bishop

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)

APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539.

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)

JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78.

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89.

Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [11(2)over bar0]- and [0001]-oriented silicon carbide substrates

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Zhu, J., Wang, D., … Davis, R. F. (2007, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 36, pp. 285–296.

Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5A), 4083–4086.

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.