2007 journal article
Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [11(2)over bar0]- and -oriented silicon carbide substrates
Journal of Electronic Materials, 36(4), 285–296.
2006 journal article
Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates
Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 45(5A), 4083–4086.
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization
In Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.