Seann M. Bishop

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC()

Bishop, S. M., Reynolds, C. L., Molstad, J. C., Stevie, F. A., Barnhardt, D. E., & Davis, R. F. (2009, February 25). Applied Surface Science.

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(112¯0)

Bishop, S. M., Reynolds, C. L., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., … Davis, R. F. (2008, October 16). Journal of Crystal Growth.

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (112¯0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reitmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, January 2). Journal of Crystal Growth.

Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ $$ {\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}} $$ ]- and [0001]-Oriented Silicon Carbide Substrates

Bishop, S. M., Reynolds, C. L., Liliental-Weber, Z., Uprety, Y., Zhu, J., Wang, D., … Davis, R. F. (2007, March 15). Journal of Electronic Materials.

Origins of Parasitic Emissions from 353 nm AlGaN-based Ultraviolet Light Emitting Diodes over SiC Substrates

Park, J.-S., Fothergill, D. W., Wellenius, P., Bishop, S. M., Muth, J. F., & Davis, R. F. (2006, May 1). Japanese Journal of Applied Physics.

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.