Works (6)

Updated: July 5th, 2023 15:56

2009 journal article

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)

APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539.

By: S. Bishop n, C. Reynolds n, J. Molstad*, F. Stevie n, D. Barnhardt n & R. Davis*

author keywords: 4H-SiC; Chemical vapor deposition processes-hot wall epitaxy and sublimation epitaxy; Interfacial impurities; Cathodoluminescence; Secondary ion mass spectrometry; Impurity luminescence
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)


By: S. Bishop n, C. Reynolds n, Z. Liliental-Weber*, Y. Uprety*, C. Ebert*, F. Stevie n, J. Park n, R. Davis*

author keywords: Characterization; Chemical vapor deposition processes; Hot-wall epitaxy; Silicon carbide; Semiconducting materials
Source: Web Of Science
Added: August 6, 2018

2007 article

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89.

By: S. Bishop n, J. Park n, J. Gu*, B. Wagner n, Z. Reltmeier, D. Batchelor n, D. Zakharov*, Z. Liliental-Weber*, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2007 article

Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [11(2)over bar0]- and [0001]-oriented silicon carbide substrates

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Zhu, J., Wang, D., … Davis, R. F. (2007, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 36, pp. 285–296.

By: S. Bishop n, C. Reynolds n, Z. Liliental-Weber*, Y. Uprety*, J. Zhu*, D. Wang*, M. Park*, J. Molstad* ...

author keywords: silicon carbide (SiC); chemical vapor deposition (CVD); polytype replication; x-ray diffraction (XRD); cathodoluminescence (CL); Raman spectroscopy; transmission electron microscopy (TEM); atomic force microscopy (AFM)
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates


By: J. Park n, D. Fothergill n, P. Wellenius n, S. Bishop n, J. Muth n & R. Davis n

author keywords: light emitting diode; ultraviolet; parasitic emission; AlGaN; carrier blocking layer
Source: Web Of Science
Added: August 6, 2018

2004 chapter

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

By: S. Bishop, E. Preble, C. Hallin, A. Henry, L. Storasta, H. Jacobson, B. Wagner, Z. Reitmeier, E. Janzen, R. Davis

Ed(s): J. R. Madar & E. Blanquet

Source: NC State University Libraries
Added: August 6, 2018