@article{bishop_reynolds_molstad_stevie_barnhardt_davis_2009, title={On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)}, volume={255}, DOI={10.1016/j.apsusc.2009.02.036}, number={13-14}, journal={Applied Surface Science}, author={Bishop, S. M. and Reynolds, C. L. and Molstad, J. C. and Stevie, F. A. and Barnhardt, D. E. and Davis, R. F.}, year={2009}, pages={6535–6539} }
 @article{bishop_reynolds_liliental-weber_uprety_ebert_stevie_park_davis_2008, title={Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)}, volume={311}, DOI={10.1016/j.jcrysgro.2008.09.200}, number={1}, journal={Journal of Crystal Growth}, author={Bishop, S. M. and Reynolds, C. L. and Liliental-Weber, Z. and Uprety, Y. and Ebert, C. W. and Stevie, F. A. and Park, J. S. and Davis, R. F.}, year={2008}, pages={72–78} }
 @article{bishop_park_gu_wagner_reltmeier_batchelor_zakharov_liliental-weber_davis_2007, title={Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)}, volume={300}, DOI={10.1016/j.jcrysgro.2006.10.207}, number={1}, journal={Journal of Crystal Growth}, author={Bishop, S. M. and Park, J. S. and Gu, J. and Wagner, B. P. and Reltmeier, Z. J. and Batchelor, D. A. and Zakharov, D. N. and Liliental-Weber, Z. and Davis, R. F.}, year={2007}, pages={83–89} }
 @article{bishop_reynolds_liliental-weber_uprety_zhu_wang_park_molstad_barnhardt_shrivastava_et al._2007, title={Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [11(2)over bar0]- and [0001]-oriented silicon carbide substrates}, volume={36}, DOI={10.1007/s11664-006-0076-2}, number={4}, journal={Journal of Electronic Materials}, author={Bishop, S. M. and Reynolds, C. L. and Liliental-Weber, Z. and Uprety, Y. and Zhu, J. and Wang, D. and Park, M. and Molstad, J. C. and Barnhardt, D. E. and Shrivastava, A. and et al.}, year={2007}, pages={285–296} }
 @article{park_fothergill_wellenius_bishop_muth_davis_2006, title={Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates}, volume={45}, DOI={10.1143/jjap.45.4083}, number={5A}, journal={Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers}, author={Park, J. S. and Fothergill, D. W. and Wellenius, P. and Bishop, S. M. and Muth, J. F. and Davis, R. F.}, year={2006}, pages={4083–4086} }
 @inbook{bishop_preble_hallin_henry_storasta_jacobson_wagner_reitmeier_janzen_davis_2004, title={Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization}, volume={457-460}, booktitle={Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003}, publisher={Utikon-Zurich, Switzerland: Trans Tech Publications}, author={Bishop, S. M. and Preble, E. A. and Hallin, C. and Henry, A. and Storasta, L. and Jacobson, H. and Wagner, B. P. and Reitmeier, Z. and Janzen, E. and Davis, R. F.}, year={2004}, pages={221–224} }