@article{reed_arkun_berkman_elmasry_zavada_luen_reed_bedair_2005, title={Effect of doping on the magnetic properties of GaMnN: Fermi level engineering}, volume={86}, ISSN={["1077-3118"]}, DOI={10.1063/1.1881786}, abstractNote={GaMnN dilute magnetic semiconductor samples, prepared by metalorganic chemical vapor deposition, are shown to exhibit ferromagnetism or even paramagnetism depending upon the type and concentration of extrinsic impurity present in the film. In addition, GaMnN deposited using growth parameters normally yielding a nonferromagnetic film becomes strongly ferromagnetic with the addition of magnesium, an acceptor dopant. Based upon these observations, it seems that ferromagnetism in this material system depends on the relative position of the Mn energy band and the Fermi level within the GaMnN band gap. Only when the Fermi level closely coincides with the Mn-energy level is ferromagnetism achieved. By actively engineering the Fermi energy to be within or near the Mn energy band, room temperature ferromagnetism is realized.}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Reed, MJ and Arkun, FE and Berkman, EA and Elmasry, NA and Zavada, J and Luen, MO and Reed, ML and Bedair, SM}, year={2005}, month={Mar} }
 @article{arkun_reed_berkman_el-masry_zavada_reed_bedair_2004, title={Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface}, volume={85}, ISSN={["1077-3118"]}, DOI={10.1063/1.1810216}, abstractNote={We report on the dependence of ferromagnetic properties of metalorganic chemical vapor deposition grown GaMnN films on carrier transfer across adjacent layers. We found that the magnetic properties of GaMnN, as a part of GaMnN∕GaN:Mg heterostructures, depend on the thickness of both the GaMnN film and the adjacent GaN:Mg layer and on the presence of a wide band gap barrier at this interface. These results are explained based on the occupancy of the Mn energy band and how the occupancy can be altered due to carrier transfer at the GaMnN∕GaN:Mg interfaces.}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Arkun, FE and Reed, MJ and Berkman, EA and El-Masry, NA and Zavada, JM and Reed, ML and Bedair, SM}, year={2004}, month={Oct}, pages={3809–3811} }
 @article{reed_reed_jagannadham_verghese_bedair_el-masry_butler_2004, title={Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence}, volume={22}, ISSN={["1520-8559"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-4344661941&partnerID=MN8TOARS}, DOI={10.1116/1.1763910}, abstractNote={A sample of B10 isotope doped diamond was neutron irradiated to a thermal fluence of 1.3×1019 neutron cm−2. The diamond sample was cooled continuously during irradiation in a nuclear reactor. Li7 is formed by nuclear transmutation reaction from B10. Characterization for electrical conductance in the temperature range of 160 K<T<600 K was performed on an unirradiated B10 doped sample and the B10 doped and irradiated sample. The unirradiated diamond sample showed p-type conductance at higher temperature (T>200 K) and p-type surface conductance at lower temperature (T<200 K). The irradiated sample showed decreasing conductance below 230 K and increasing conductance above 230 K with increasing temperature. Furthermore, the conductance showed a decrease above 400 K followed by an increase above 500 K. The observed behavior below 400 K with increase in temperature is interpreted in terms of compensation of surface p-type carriers by n-type bulk carriers generated from Li7 that is formed by nuclear transmutation reaction from B10 atoms. Also, compensation of n-type carriers from Li7 by p-type carriers from B10 is used to interpret the conductance above 400 K. A low concentration of radiation induced defects, absence of defect complexes, and the low activation energy of n-type Li7 are thought responsible for the observed variation of conductance in the irradiated diamond. The present results illustrate that neutron transmutation from B10 doped diamond is a useful method to achieve n-type conductivity in diamond.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Reed, ML and Reed, MJ and Jagannadham, K and Verghese, K and Bedair, SM and El-Masry, N and Butler, JE}, year={2004}, pages={1191–1194} }
 @misc{elmasry_bedair_reed_stadelmaier, title={Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same}, volume={6,955,858}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={ElMasry, N. A. and Bedair, S. M. and Reed, M. L. and Stadelmaier, H.} }