@article{czerwinski_simoen_poyai_claeys_2004, title={Local electric fields in silicided shallow junctions}, volume={151}, ISSN={["1945-7111"]}, DOI={10.1149/1.1772783}, abstractNote={The local electric field in a p-n junction crucially impacts the reverse (leakage) current that determines basic parameters of semiconductor devices and integrated circuits. The field importance and magnitude are investigated by a method based on the analysis of the leakage-current activation-energy (E a ) and its dependence on junction bias (V R ). especially on experimental occurrence of the dE a /dV R minimum. It is illustrated for silicided shallow junctions, which exhibit together with the generation current also a local Schottky effect due to small-area silicide penetrations. The method may also be used for different materials and current origins.}, number={9}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Czerwinski, A and Simoen, E and Poyai, A and Claeys, C}, year={2004}, pages={G578–G582} }