@article{zhang_wilson_bashirullah_luo_xu_franzon_2009, title={A 32-Gb/s On-Chip Bus With Driver Pre-Emphasis Signaling}, volume={17}, ISSN={1063-8210 1557-9999}, url={http://dx.doi.org/10.1109/tvlsi.2008.2002682}, DOI={10.1109/TVLSI.2008.2002682}, abstractNote={This paper describes a differential current-mode bus architecture based on driver pre-emphasis for on-chip global interconnects that achieves high-data rates while reducing bus power dissipation and improving signal delay latency. The 16-b bus core fabricated in 0.25-mum complementary metal-oxide-semiconductor (CMOS) technology attains an aggregate signaling data rate of 32 Gb/s over 5-10-mm-long lossy interconnects. With a supply of 2.5 V, 25.5-48.7-mW power dissipation was measured for signal activity above 0.1, equivalent to 0.80-1.52 pJ/b. This work demonstrates a 15.0%-67.5% power reduction over a conventional single-ended voltage-mode static bus while reducing delay latency by 28.3% and peak current by 70%. The proposed bus architecture is robust against crosstalk noise and occupies comparable routing area to a reference static bus design.}, number={9}, journal={IEEE Transactions on Very Large Scale Integration (VLSI) Systems}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Zhang, Liang and Wilson, John M. and Bashirullah, Rizwan and Luo, Lei and Xu, Jian and Franzon, Paul D.}, year={2009}, month={Sep}, pages={1267–1274} }
 @inproceedings{chandrasekar_wilson_erickson_feng_xu_mick_franzon_2008, title={Inductively coupled connectors and sockets for multi-Gb/s pulse signaling}, volume={31}, DOI={10.1109/tadvp.2008.2005465}, abstractNote={Multi-Gb/s pulse signaling is demonstrated with inductively coupled interconnects across packaging interfaces. This has application in realizing submillimeter pitch, true zero insertion force (ZIF) surface mount connectors, and sockets. The signaling data rate achieved in this system is from 1 to 8.5 Gbps, which depends on the 3-dB coupling frequency of the composite channel consisting of the inductive interconnections and the transmission lines. This paper presents the results of a set of experiments demonstrating this capability and describes the principles behind the design of inductively coupled sockets and connectors.}, number={4}, booktitle={IEEE Transactions on Advanced Packaging}, author={Chandrasekar, K. and Wilson, J. and Erickson, E. and Feng, Z. P. and Xu, J. and Mick, S. and Franzon, Paul}, year={2008}, pages={749–758} }
 @article{wilson_mick_xu_luo_bonafede_huffman_labennett_franzon_2007, title={Fully integrated AC coupled interconnect using buried bumps}, volume={30}, ISSN={["1521-3323"]}, DOI={10.1109/TADVP.2007.896920}, abstractNote={Presented is the complete demonstration of an assembled system using AC coupled interconnect (ACCI) and buried solder bumps. In this system, noncontacting input/output (I/O) are created by using half-capacitor plates on both a chip and a substrate, while buried solder bumps are used to provide power/ground distribution and physical alignment of the coupling plates. ACCI using buried bumps is a technology that provides a manufacturable solution for noncontacting I/O signaling by integrating high-density, low inductance power/ground distribution with high-density, high-speed I/O. The demonstration system shows two channels operating simultaneously at 2.5 Gb/s/channel with a bit error rate less than 10-12, across 5.6 cm of transmission line on a multichip module (MCM). Simple transceiver circuits were designed and fabricated in a 0.35 -mum complementary metal-oxide-semiconductor (CMOS) technology, and for PRBS-127 data at 2.5 Gb/s transmit and receive circuits consumed 10.3 mW and 15.0 mW, respectively. This work illustrates the increasing importance of chip and package co-design for high-performance systems.}, number={2}, journal={IEEE TRANSACTIONS ON ADVANCED PACKAGING}, author={Wilson, John and Mick, Stephen and Xu, Jian and Luo, Lei and Bonafede, Salvatore and Huffman, Alan and LaBennett, Richard and Franzon, Paul D.}, year={2007}, month={May}, pages={191–199} }
 @article{xu_liu_cui_gerhold_wang_nagel_lippert_2007, title={Laser-assisted forward transfer of multi-spectral nanocrystal quantum dot emitters}, volume={18}, number={2}, journal={Nanotechnology}, author={Xu, J. and Liu, J. and Cui, D. H. and Gerhold, M. and Wang, A. Y. and Nagel, M. and Lippert, T. K.}, year={2007} }
 @article{voitenko_muth_gerhold_cui_xu_2007, title={Tunable photoluminescence of polymer doped with PbSe quantum dots}, volume={27}, ISSN={["0928-4931"]}, DOI={10.1016/j.msec.2006.09.018}, abstractNote={Semiconductor nanoparticle/polymer composites potentially allow the design of photonic materials for optoelectronic devices. The optical characteristics of PbSe quantum dots placed in polymer matrices are investigated for potential applications in electrically controlled absorption modulators and integrated optical circuit components. The photoluminescence yield, shape of absorption band, and effects of size variation of PbSe quantum dots on spectral features are analyzed near the absorption edge of host polymers for the different concentrations of nanocrystals in the composite. It was found that for quantum dots of nominally the same size, there is a strong dependence of position of the absorption peaks in the spectrum depending on the concentration of quantum dots. This results in the emission in the 1500–1600 nm range being tunable with quantum dot concentration. A second emission in the 1200–1300 nm range was also observed and energy transfer from the polymer matrix to the quantum dot appears to mediate the strength of this photoluminescence.}, number={5-8}, journal={MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS}, author={Voitenko, Igor and Muth, J. F. and Gerhold, Michael and Cui, Dehu and Xu, Jian}, year={2007}, month={Sep}, pages={1078–1081} }
 @article{zhang_wilson_bashirullah_luo_xu_franzon_2007, title={Voltage-mode driver preemphasis technique for on-chip global buses}, volume={15}, ISSN={["1557-9999"]}, DOI={10.1109/TVLSI.2007.893588}, abstractNote={This paper demonstrates that driver preemphasis technique can be used for on-chip global buses to increase signal channel bandwidth. Compared to conventional repeater insertion techniques, driver preemphasis saves repeater layout complexity and reduces power consumption by 12%-39% for data activity factors above 0.1. A driver circuit architecture using voltage-mode preemphasis technique was tested in 0.18-mum CMOS technology for 10-mm long interconnects at 2 Gb/s}, number={2}, journal={IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS}, author={Zhang, Liang and Wilson, John M. and Bashirullah, Rizwan and Luo, Lei and Xu, Jian and Franzon, Paul D.}, year={2007}, month={Feb}, pages={231–236} }
 @article{cui_xu_xu_paradee_lewis_gerhold_2006, title={Infrared photodiode based on colloidal PbSe nanocrystal quantum dots}, volume={5}, ISSN={["1941-0085"]}, DOI={10.1109/TNANO.2006.877432}, abstractNote={We report in this paper our studies on the photoconductivity and photovoltaic effects of colloidal PbSe nanocrystal quantum dots (NQDs) which were embedded in conductive polymer matrices to form hybrid polymer/NQD infrared photodiodes. The generation of photocarriers in PbSe NQDs and their transport in NQD-polymer composites were described by a simplified band diagram picture of the device. Both photocurrent and photovoltage outputs were measured from the NQD-incorporated photodiode upon the illumination of near-infrared (NIR) light, whereas the net polymer-based devices do not exhibit any photoresponsivity. The intensity dependence of the photocurrent indicates the pseudomonomolecular recombination kinetics in the NQD-polymer composite. The measured photocurrent spectrum is consistent with the absorption characteristic of PbSe NQDs. Further enhancement of the photodiode efficiency can be achieved by engineering the nanocrystal surface to reduce the potential barriers due to the ligant capping molecules}, number={4}, journal={IEEE TRANSACTIONS ON NANOTECHNOLOGY}, author={Cui, Dehu and Xu, Jian and Xu, Sheng-Yong and Paradee, Gary and Lewis, Bradley A. and Gerhold, Michael D.}, year={2006}, month={Jul}, pages={362–367} }
 @article{xu_mick_wilson_luo_chandrasekar_erickson_franzon_2004, title={AC coupled interconnect for dense 3-D ICs}, volume={51}, ISSN={["1558-1578"]}, DOI={10.1109/TNS.2004.834712}, abstractNote={This paper presents the potential application of AC coupled interconnect (ACCI) for dense three-dimensional (3-D) integrated circuits (ICs). The concept of inductive ACCI for 3-D ICs has been proposed. Combined with the "through vias" technology, inductive ACCI can provide small pitch vertical interconnects, as well as an excellent thermal solution for dense 3-D ICs. Transformer modeling and transceiver circuit design have also been investigated. Simulations predict that, for 20 /spl mu/m thinned die stacks coupled by a 100 /spl mu/m diameter transformer, the transceiver circuit fed with a 5 Gbps data stream consumes 14.5 mW power.}, number={5}, journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE}, author={Xu, J and Mick, S and Wilson, J and Luo, L and Chandrasekar, K and Erickson, E and Franzon, PD}, year={2004}, month={Oct}, pages={2156–2160} }