2007 article
Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)
Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89.
2006 journal article
Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates
JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512.
2005 journal article
Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN
Journal of Applied Physics, 98(6).
2005 journal article
Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides
Physical Review Letters, 95(8).
2005 journal article
Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy
Physical Review. B, Condensed Matter and Materials Physics, 71(23).
2005 journal article
Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates
Journal of Applied Physics, 97(11).
2004 journal article
Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77.
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