Works (7)

Updated: July 5th, 2023 15:57

2007 article

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89.

By: S. Bishop n, J. Park n, J. Gu*, B. Wagner n, Z. Reltmeier, D. Batchelor n, D. Zakharov*, Z. Liliental-Weber*, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512.

By: B. Wagner*, Z. Reitmeier*, J. Park*, D. Bachelor*, D. Zakharov, Z. Liliental-Weber, R. Davis*

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

Journal of Applied Physics, 98(6).

By: J. Bai, X. Huang, M. Dudley, B. Wagner, R. Davis, L. Wu, E. Sutter, Y. Zhu, B. Skromme

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77.

Source: Web Of Science
Added: August 6, 2018

2005 journal article

Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides

Physical Review Letters, 95(8).

By: X. Huang, J. Bai, M. Dudley, B. Wagner, R. Davis & Y. Zhu

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

Physical Review. B, Condensed Matter and Materials Physics, 71(23).

By: D. Zakharov, Z. Liliental-Weber, B. Wagner, Z. Reitmeier, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

Journal of Applied Physics, 97(11).

By: J. Bai, M. Dudley, L. Chen, B. Skromme, B. Wagner, R. Davis, U. Chowdhury, R. Dupuis

Source: NC State University Libraries
Added: August 6, 2018