Brian P. Wagner

Works (7)

Updated: July 5th, 2023 15:57

2007 article

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (112¯0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reitmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, January 2). Journal of Crystal Growth.

By: S. Bishop n, J. Park n, J. Gu *, B. Wagner n, Z. Reitmeier n, D. Batchelor n, D. Zakharov *, Z. Liliental-Weber *, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2006 article

Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates

Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. (2006, April 6). Journal of Crystal Growth.

By: B. Wagner n, Z. Reitmeier n, J. Park n, D. Bachelor n, D. Zakharov *, Z. Liliental-Weber *, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

Journal of Applied Physics, 98(6).

By: J. Bai, X. Huang, M. Dudley, B. Wagner, R. Davis, L. Wu, E. Sutter, Y. Zhu, B. Skromme

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides

Physical Review Letters, 95(8).

By: X. Huang, J. Bai, M. Dudley, B. Wagner, R. Davis & Y. Zhu

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

Physical Review. B, Condensed Matter and Materials Physics, 71(23).

By: D. Zakharov, Z. Liliental-Weber, B. Wagner, Z. Reitmeier, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

Journal of Applied Physics, 97(11).

By: J. Bai, M. Dudley, L. Chen, B. Skromme, B. Wagner, R. Davis, U. Chowdhury, R. Dupuis

Source: NC State University Libraries
Added: August 6, 2018

2004 article

Preparation and characterization of atomically clean, stoichiometric surfaces of AIN(0001)

Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. (2004, December 2). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: W. Mecouch n, B. Wagner n, Z. Reitmeier n, R. Davis n, C. Pandarinath  n, B. Rodriguez n, R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2026) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.