@article{biswas_gurganus_misra_yang_stemmer_2005, title={Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application}, volume={86}, ISSN={["1077-3118"]}, DOI={10.1063/1.1849850}, abstractNote={Characteristics of NiSi and MoSi via full consumption of undoped silicon layers have been studied. Interaction of nickel (Ni) and molybdenum (Mo) silicides with SiO2 was evaluated in terms of work function and thermal stability. For nickel silicide, the work function values were low for samples annealed at 400 °C even after full consumption of silicon. The work function increased with the anneal temperature and stabilized at 600 °C to close to midgap values. Dielectric interaction as a result of silicide formation was studied using current–voltage characteristics. Low leakage currents in these stacks indicated minimum dielectric damage due to silicided gates. Silicidation of Mo was found to be incomplete as the capacitance–voltage curves were marked with larger EOT values and negative shifts in the flatband voltages even at 700 °C. Auger depth profiling, high resolution transmission electron microscopy (HRTEM) and x-ray diffraction (XRD) were used for material analysis of the silicided gate stacks.}, number={2}, journal={APPLIED PHYSICS LETTERS}, author={Biswas, N and Gurganus, J and Misra, V and Yang, Y and Stemmer, S}, year={2005}, month={Jan} }
 @article{chen_suh_lee_gurganus_misra_cabral_2005, title={Physical and electrical analysis of RuxYy alloys for gate electrode applications}, volume={86}, ISSN={["1077-3118"]}, DOI={10.1063/1.1857093}, abstractNote={This letter describes RuxYy as a potential candidate for dual metal complementary metal–oxide–semiconductor applications. The characterization of RuY alloys indicate that the effective work function can be controlled from 3.9to5.0eV as the yttrium composition in the RuxYy is decreased in film for both PMOS and NMOS application. From x-ray photoelectron spectroscopy analysis, it was found that the Ru3d peaks do not change as the Y composition is changed, indicating the Ru–Y bonding is very weak or undetectable in RuxYy film. However, it was also found that Y reacts with the underlying SiO2 to form yttrium silicate. In addition, in situ x-ray diffraction results did not detect the presence of Ru–Y compound in the RuxYy films. Capacitance–voltage (C–V) characterization indicated that the oxide thickness decreased as the Y composition increased. We extracted the effective barrier height of RuxYy at the metal–oxide interface via Fowler–Nordheim current analysis. The barrier height decreases as the Y compositio...}, number={5}, journal={APPLIED PHYSICS LETTERS}, author={Chen, B and Suh, Y and Lee, J and Gurganus, J and Misra, V and Cabral, C}, year={2005}, month={Jan} }