@article{zhang_huang_chen_atcitty_ingram_2006, title={Development and experimental demonstration of a self-powered ETO (SPETO)}, volume={42}, ISSN={["1939-9367"]}, DOI={10.1109/TIA.2006.882657}, abstractNote={This paper presents the design and experimental demonstration of a superior high-power-device self-powered emitter turn-off thyristor (SPETO). Different from conventional high-power devices which require external power input for their gate drivers, the SPETO achieves optically controlled turn on and turn off, and all of the internal power required is self-obtained. A low-loss gate-drive circuit is implemented which allows the simple power-up operation. During a normal switching operation, the SPETO obtains a power for the gate drive during its turn-on operation. A novel switching strategy is also introduced to minimize the gate-drive power requirement. The SPETO greatly reduces costs and increases the reliability of power converters since no external power supply for device gate drive is required. Therefore, the SPETO is suitable for high-power high-frequency voltage-source-converter applications}, number={6}, journal={IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS}, author={Zhang, Bin and Huang, Alex Q. and Chen, Bin and Atcitty, Stanley and Ingram, Michael}, year={2006}, pages={1387–1394} }
 @article{chen_biswas_misra_2006, title={Electrical and physical analysis of MoTa alloy for gate electrode applications}, volume={153}, ISSN={["1945-7111"]}, DOI={10.1149/1.2180710}, abstractNote={This article presents Mo x Ta v as a potential candidate for dual metal complementary metal oxide semiconductor (CMOS) applications. The electrical characterization results of MoTa alloy indicates that the effective work function can be controlled to around 4.3 eV on SiO 2 and is suitable for n-type MOS gate electrode application. The MoTa alloy forms a solid solution instead of an intermetallic compound. We report that the MoTa solid solution can achieve low work function values and is stable up to 900°C. X-ray diffraction results indicated only a single MoTa alloy phase. X-ray photoelectron spectroscopy analysis confirmed that no Mo-Ta compound bonding formed within the MoTa alloy. Moreover, from Auger electron spectroscopy and Rutherford backscattering spectroscopy analysis, MoTa was found to be stable on SiO 2 under high-temperature anneals and no metal diffusion into substrate Si channel was detected. This indicates that Mo x Ta y is a good candidate for CMOS metal gate applications.}, number={5}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Chen, B and Biswas, N and Misra, V}, year={2006}, pages={G417–G419} }
 @article{lichtenwalner_jur_jha_inoue_chen_misra_kingon_2006, title={High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes}, volume={153}, ISSN={["1945-7111"]}, DOI={10.1149/1.2218757}, abstractNote={The high-temperature stability of lanthanum silicate gate dielectric metal-insulator-semiconductor (MIS) devices with either Ta or TaN electrodes has been studied. After a 1000°C, 10 s rapid thermal annealing (RTA) treatment, devices with Ta gate metal undergo an equivalent oxide thickness (EOT) increase from 0.62 to 1.57 nm or higher, while devices with TaN as the gate electrode experience an EOT increase from 0.62 to only 1.12 nm. An EOT less than 1.0 nm is achieved after a 5 s 1000°C RTA, with a corresponding gate leakage of 0.1 A/cm 2 . Medium-energy ion scattering and X-ray diffraction (XRD) analysis reveal that the Ta gate metal undergoes a phase change due to reaction with N 2 above 800°C, while for TaN no change in the XRD spectrum is detected. Interface state defect densities and leakage currents are reduced after the high-temperature processing. Results reveal the importance of the entire gate stack design and processing in obtaining good device properties.}, number={9}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Lichtenwalner, Daniel J. and Jur, Jesse S. and Jha, Rashmi and Inoue, Naoya and Chen, Bei and Misra, Veena and Kingon, Angus I.}, year={2006}, pages={F210–F214} }
 @article{chen_jha_lazar_biswas_lee_lee_wielunski_garfunkel_misra_2006, title={Influence of oxygen diffusion through capping layers of low work function metal gate electrodes}, volume={27}, ISSN={["1558-0563"]}, DOI={10.1109/LED.2006.871184}, abstractNote={This letter evaluates Ru and W capping layers for MoTa metal gate electrodes in MOS capacitor applications. The authors report that the oxygen diffusion from the capping layer plays an important role in determining the MoTa alloy effective work function value on SiO/sub 2/. A MoTa alloy metal gate with Ru capping exhibits stable effective work function up to 900/spl deg/C annealing but is not stable with W capping. Auger electron spectroscopy and Rutherford backscattering spectroscopy analyses show minimal oxygen diffusion into MoTa gate stacks with Ru capping while severe oxygen diffusion into the gate is observed with W capping metal after 900/spl deg/C annealing. Current-voltage analysis also demonstrates different barrier heights of MoTa on SiO/sub 2/ with Ru or W capping layer after 900/spl deg/C annealing, confirming the effective work function value change.}, number={4}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Chen, B and Jha, R and Lazar, H and Biswas, N and Lee, J and Lee, B and Wielunski, L and Garfunkel, E and Misra, V}, year={2006}, month={Apr}, pages={228–230} }
 @article{chen_jha_misra_2006, title={Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys}, volume={27}, ISSN={["1558-0563"]}, DOI={10.1109/LED.2006.880643}, abstractNote={This letter presents a route for tuning the metal gate effective work function via interface dipoles formed using AlTa and AlTaN alloys. It was found that the AlTa alloy has a higher effective work function (4.45 eV) compared to either Al (~ 4.1 eV) or Ta (4.2 eV) gates on SiO 2 at 400 degC. This increase in effective work function was attributed to interface dipoles formed at the gate electrode and dielectric interface. The origin of this dipole is attributed to a reaction between the AlTa alloy and the dielectric layer. Similar AlTa effective work function tuning was also observed on high-k dielectrics. However, since the AlTa alloy is not thermally stable on SiO2, nitrogen was added to stabilize the electrode. The addition of N stabilizes the equivalent oxide thickness while still allowing for work function tuning under high temperatures. AlTaN alloys were deposited by reactive sputtering and resulted in an effective work function of ~ 5.1 eV after a 1000 degC anneal, making them suitable for PMOS gate applications}, number={9}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Chen, Bei and Jha, Rashmi and Misra, Veena}, year={2006}, month={Sep}, pages={731–733} }
 @article{lin_ozturk_chen_rhee_lee_misra_2005, title={Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels}, volume={87}, ISSN={["1077-3118"]}, DOI={10.1063/1.2009809}, abstractNote={Tensile-strained Si epitaxial layers (7.5nm–17nm) were grown on relaxed Si0.5Ge0.5 virtual substrates by ultrahigh-vacuum rapid thermal chemical vapor deposition. Metal-oxide-silicon capacitors were fabricated with SiO2 or HfO2 as gate dielectrics and Ru–Ta alloy or TaN as the metal gate electrodes. The results indicate that the interface trap density (Dit) increased as the strained silicon thickness decreased, which was attributed to the presence of Ge in the strained Si layer. Higher Dit was observed with SiO2 which may be due to Si consumption during oxidation, leading to a higher density of Ge at the interface. Leakage current density (Jg) was also observed to increase with increasing strained silicon thickness. This trend of increasing Dit and Jg with decreasing strained silicon thickness did not change after rapid thermal annealing. Both Ru–Ta and TaN gate electrodes were found to exhibit as good a performance on strained Si as on bulk Si.}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Lin, YX and Ozturk, MC and Chen, B and Rhee, SJ and Lee, JC and Misra, V}, year={2005}, month={Aug} }
 @article{chen_suh_lee_gurganus_misra_cabral_2005, title={Physical and electrical analysis of RuxYy alloys for gate electrode applications}, volume={86}, ISSN={["1077-3118"]}, DOI={10.1063/1.1857093}, abstractNote={This letter describes RuxYy as a potential candidate for dual metal complementary metal–oxide–semiconductor applications. The characterization of RuY alloys indicate that the effective work function can be controlled from 3.9to5.0eV as the yttrium composition in the RuxYy is decreased in film for both PMOS and NMOS application. From x-ray photoelectron spectroscopy analysis, it was found that the Ru3d peaks do not change as the Y composition is changed, indicating the Ru–Y bonding is very weak or undetectable in RuxYy film. However, it was also found that Y reacts with the underlying SiO2 to form yttrium silicate. In addition, in situ x-ray diffraction results did not detect the presence of Ru–Y compound in the RuxYy films. Capacitance–voltage (C–V) characterization indicated that the oxide thickness decreased as the Y composition increased. We extracted the effective barrier height of RuxYy at the metal–oxide interface via Fowler–Nordheim current analysis. The barrier height decreases as the Y compositio...}, number={5}, journal={APPLIED PHYSICS LETTERS}, author={Chen, B and Suh, Y and Lee, J and Gurganus, J and Misra, V and Cabral, C}, year={2005}, month={Jan} }
 @article{lee_kim_hong_zhong_chen_misra_2005, title={Properties of Ta-Mo alloy gate electrode for n-MOSFET}, volume={40}, ISSN={["1573-4803"]}, DOI={10.1007/s10853-005-2108-3}, number={9-10}, journal={JOURNAL OF MATERIALS SCIENCE}, author={Lee, CK and Kim, JY and Hong, SN and Zhong, HC and Chen, B and Misra, V}, year={2005}, month={May}, pages={2693–2695} }