Bei Chen

Zhang, B., Huang, A. Q., Chen, B., Atcitty, S., & Ingram, M. (2006). Development and experimental demonstration of a self-powered ETO (SPETO). IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 42, pp. 1387–1394. https://doi.org/10.1109/TIA.2006.882657

Chen, B., Biswas, N., & Misra, V. (2006). Electrical and physical analysis of MoTa alloy for gate electrode applications. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(5), G417–G419. https://doi.org/10.1149/1.2180710

Lichtenwalner, D. J., Jur, J. S., Jha, R., Inoue, N., Chen, B., Misra, V., & Kingon, A. I. (2006). High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214. https://doi.org/10.1149/1.2218757

Chen, B., Jha, R., Lazar, H., Biswas, N., Lee, J., Lee, B., … Misra, V. (2006). Influence of oxygen diffusion through capping layers of low work function metal gate electrodes. IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230. https://doi.org/10.1109/LED.2006.871184

Chen, B., Jha, R., & Misra, V. (2006). Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys. IEEE ELECTRON DEVICE LETTERS, 27(9), 731–733. https://doi.org/10.1109/LED.2006.880643

Lin, Y. X., Ozturk, M. C., Chen, B., Rhee, S. J., Lee, J. C., & Misra, V. (2005). Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels. APPLIED PHYSICS LETTERS, 87(7). https://doi.org/10.1063/1.2009809

Chen, B., Suh, Y., Lee, J., Gurganus, J., Misra, V., & Cabral, C. (2005). Physical and electrical analysis of RuxYy alloys for gate electrode applications. APPLIED PHYSICS LETTERS, 86(5). https://doi.org/10.1063/1.1857093

Lee, C. K., Kim, J. Y., Hong, S. N., Zhong, H. C., Chen, B., & Misra, V. (2005). Properties of Ta-Mo alloy gate electrode for n-MOSFET. JOURNAL OF MATERIALS SCIENCE, 40(9-10), 2693–2695. https://doi.org/10.1007/s10853-005-2108-3