Hyungtak Seo

Lucovsky, G., Long, J. P., Chung, K. B., Seo, H., Watts, B., Vasic, R., & Ulrich, M. D. (2009). Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 27(1), 294–299.

Lee, S., Seo, H., Lucovsky, G., Fleming, L. B., Ulrich, M. D., & Luening, J. (2008). Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics. THIN SOLID FILMS, 517(1), 437–440. https://doi.org/10.1016/j.tsf.2008.08.098

Lee, S., Long, J. P., Lucovsky, G., Whitten, J. L., Seo, H., & Luning, J. (2008). Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. MICROELECTRONICS RELIABILITY, 48(3), 364–369. https://doi.org/10.1016/j.microrel.2007.07.068

Chung, K. B., Seo, H., Long, J. P., & Lucovsky, G. (2008). Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates. APPLIED PHYSICS LETTERS, 93(18). https://doi.org/10.1063/1.3005422

Lucovsky, G., Seo, H., Lee, S., Fleming, L. B., Ulrich, M. D., & Luning, J. (2007). Defect reduction by suppression of pi-bonding coupling in nano- and non-crystalline high-(medium)-kappa gate dielectrics. MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2350–2353. https://doi.org/10.1016/j.mee.2007.04.062

Lucovsky, G., Seo, H., Lee, S., Fleming, L. B., Ulrich, M. D., Luning, J., … Bersuker, G. (2007, April). Intrinsic electronically active defects in transition metal elemental oxides. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Vol. 46, pp. 1899–1909. https://doi.org/10.1143/JJAP.46.1899

Seo, H., Lucovsky, G., Fleming, L. B., Ulrich, M. D., Luning, J., Koster, G., & Geballe, T. H. (2007). Length scales for coherent pi-bonding interactions in complex high-k oxide dielectrics and their interfaces. MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2298–2301. https://doi.org/10.1016/j.mee.2007.04.069

Lucovsky, G., Luening, J., Fleming, L. B., Ulrich, M. D., Rowe, J. E., Seo, H., … Bersuker, G. (2007, October). Spectroscopic studies of O-vacancy defects in transition metal oxides. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18, pp. S263–S266. https://doi.org/10.1007/s10854-007-9192-x

Lucovsky, G., Seo, H., Fleming, L. B., Luening, J., Lysaght, P., & Bersuker, G. (2007, September 15). Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies. SURFACE SCIENCE, Vol. 601, pp. 4236–4241. https://doi.org/10.1016/j.susc.2007.04.197

Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., … Cressler, J. D. (2007, December). Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 54, pp. 1931–1937. https://doi.org/10.1109/TNS.2007.910862

Lucovsky, G., Hinkle, C. L., Fulton, C. C., Stoute, N. A., Seo, H., & Luning, J. (2006, November). Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2. RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 2097–2101. https://doi.org/10.1016/j.radphyschem.2005.07.062

Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3. RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595. https://doi.org/10.1016/j.radphyschem.2006.05.004

Seo, H., Kim, J. H., Chung, K. H., Kim, J. Y., Kim, S. H., & Jeon, H. (2005). Characterization of remote inductively coupled CH4-N-2 plasma for carbon nitride thin-film deposition. Journal of Applied Physics, 98(4).

Kim, J. Y., Kim, S. H., Seo, H., Kim, J. H., & Jeon, H. (2005). Deposition and plasma measurements of Zr-oxide films with low impurity concentrations by remote PEALD. ELECTROCHEMICAL AND SOLID STATE LETTERS, 8(3), G82–G84. https://doi.org/10.1149/1.1854773

Kim, S., Seo, H., Kim, Y., Kim, K., Tak, Y., & Jeon, H. (2005). Surface characteristics of indium-tin oxide cleaned by remote plasma. Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 44(2), 1041–1044.