Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN
Hartman, J. D., Naniwae, K., Petrich, C., Nemanich, R. J., & Davis, R. F. (2004, December 15). Applied Surface Science.
author keywords: photo-emission electron microscopy; gallium nitride; aluminum nitride; silicon carbide; molecular beam epitaxy; stepped single crystal surfaces
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies