@article{dutta_gupta_bhosle_narayan_2009, title={MoOx modified ZnGaO based transparent conducting oxides}, volume={105}, number={5}, journal={Journal of Applied Physics}, author={Dutta, T. and Gupta, P. and Bhosle, V. and Narayan, J.}, year={2009} }
 @article{gollapudi_bhosle_charit_murty_2008, title={Newtonian viscous creep in Ti-3Al-2.5V}, volume={88}, ISSN={["1478-6435"]}, DOI={10.1080/14786430802144154}, abstractNote={Biaxial creep tests were performed on fine-grained Ti–3Al–2.5V tubing at 823 and 873 K in the stress range σ/E  = 1.7  × 10−4 to σ/E  = 5.9  × 10−4. Subsequently, the creep data were analysed to determine the stress exponent and activation energy. A stress exponent value of 1 and an activation energy equal to that for grain boundary diffusion were suggestive of a Coble creep-controlled deformation regime. However, discrepancy between the experimental creep rates and Coble creep model predictions along with subsequent observation of deformed microstructures decorated with slip bands implied the operation of a different viscous creep mechanism. A slip band model proposed by Spingarn and Nix was found to provide a better description of the experimental strain rates rather than the conventional viscous creep mechanisms. High-resolution transmission electron microscopy studies confirmed the nature of these bands.}, number={9}, journal={PHILOSOPHICAL MAGAZINE}, author={Gollapudi, Srikant and Bhosle, Vikram and Charit, Indrajit and Murty, K. Linga}, year={2008}, pages={1357–1367} }
 @article{bhosle_narayan_2008, title={Observation of room temperature ferromagnetism in Ga : ZnO: A transition metal free transparent ferromagnetic conductor}, volume={93}, number={2}, journal={Applied Physics Letters}, author={Bhosle, V. and Narayan, J.}, year={2008} }
 @article{darling_guduru_reynolds_bhosle_chan_scattergood_koch_narayan_aboelfotoh_2008, title={Thermal stability, mechanical and electrical properties of nanocrystalline Cu3Ge}, volume={16}, ISSN={0966-9795}, url={http://dx.doi.org/10.1016/j.intermet.2007.11.005}, DOI={10.1016/j.intermet.2007.11.005}, abstractNote={The intermetallic ɛ1 compound Cu3Ge was produced through a mechanical alloying procedure that enables the formation of a nanograined microstructure. There is a dependence of grain size (20–11 nm) on milling conditions. The microstructure remained very stable even at temperatures up to 500 °C for 5 h which is a minimum of 76% of the melting temperature. The materials produced by these methods were in the form of powders with particle size ranging from 200 nm to 10 μm. The morphology of the particles varied with the largest being rough and irregular and the smallest being spherical. Preliminary resistivity measurements showed low resistivity, 8.8 μΩ cm, which is comparable to that previously reported for thin films with grain sizes thousands of times larger. Nanoindentation was also performed, yielding an elastic modulus of ∼110 GPa.}, number={3}, journal={Intermetallics}, publisher={Elsevier BV}, author={Darling, Kris A. and Guduru, R.K. and Reynolds, C. Lewis, Jr and Bhosle, Vikram M. and Chan, Ryan N. and Scattergood, Ronald O. and Koch, Carl C. and Narayan, J. and Aboelfotoh, M.O.}, year={2008}, month={Mar}, pages={378–383} }
 @article{bhosle_prater_narayan_2007, title={Anisotropic magnetic properties in [110] oriented epitaxial La0.7Sr0.3MnO3 films on (0001) sapphire}, volume={102}, number={1}, journal={Journal of Applied Physics}, author={Bhosle, V. and Prater, J. T. and Narayan, J.}, year={2007} }
 @article{bhosle_narayan_2007, title={Epitaxial growth and magnetic properties of La0.7Sr0.3MnO3 films on (0001) sapphire}, volume={90}, number={10}, journal={Applied Physics Letters}, author={Bhosle, V. and Narayan, J.}, year={2007} }
 @article{bhosle_prater_yang_burk_forrest_narayan_2007, title={Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications}, volume={102}, number={2}, journal={Journal of Applied Physics}, author={Bhosle, V. and Prater, J. T. and Yang, F. and Burk, D. and Forrest, S. R. and Narayan, J.}, year={2007} }
 @article{bhosle_tiwari_narayan_2006, title={Electrical properties of transparent and conducting Ga doped ZnO}, volume={100}, number={3}, journal={Journal of Applied Physics}, author={Bhosle, V. and Tiwari, A. and Narayan, J.}, year={2006} }
 @article{tiwari_bhosle_ramachandran_sudhakar_narayan_budak_gupta_2006, title={Ferromagnetism in Co doped CeO2: Observation of a giant magnetic moment with a high Curie temperature}, volume={88}, number={14}, journal={Applied Physics Letters}, author={Tiwari, A. and Bhosle, V. M. and Ramachandran, S. and Sudhakar, N. and Narayan, J. and Budak, S. and Gupta, A.}, year={2006} }
 @article{bhosle_tiwari_narayan_2006, title={Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO}, volume={88}, number={3}, journal={Applied Physics Letters}, author={Bhosle, V. and Tiwari, A. and Narayan, J.}, year={2006} }
 @article{narayan_bhosle_tiwari_gupta_kumar_wu_2006, title={Methods for processing tantalum films of controlled microstructures and properties}, volume={24}, ISSN={["0734-2101"]}, DOI={10.1116/1.2335863}, abstractNote={The authors have fabricated thin films of alpha tantalum (α-Ta) with crystalline and amorphous structures by nonequilibrium pulsed laser deposition techniques, and compared their electrical properties and diffusion characteristics with those of polycrystalline beta tantalum (β-Ta) films produced by magnetron sputtering. The microstructure and atomic structure of these films were studied by x-ray diffraction and high-resolution electron microscopy, while elemental analysis was performed using electron energy-loss spectroscopy and x-ray dispersive analysis. The α-Ta with body-centered-cubic structure was formed only under clean, impurity-free conditions of laser molecular beam epitaxy. The resistivity measurements in the temperature range of 10–300K showed room-temperature values to be 15–30μΩcm for α-Ta, 180–200μΩcm for β-Ta, and 250–275μΩcm for amorphous tentalum (a-Ta). The temperature coefficients of resistivity (TCRs) for α-Ta and β-Ta were found to be positive with characteristic metallic behavior, while TCR for a-Ta was negative, characteristic of high-resistivity disordered metals. The authors discuss the mechanism of formation of a-Ta and show that it is stable in the temperature range of 650–700°C. Electron energy-loss spectroscopy (EELS) and Rutherford backscattering measurements showed oxygen content in a-Ta films to be less than 0.1%. The secondary ion mass spectrometry, scanning transmission electron microscope Z-contrast imaging, and EELS studies show that, after 650°C annealing for 1h, a-Ta films have less than 10nm Cu diffusion distance while polycrystalline Ta films have substantial Cu diffusion. The superior diffusion barrier properties of a-Ta for Cu metallization have been attributed to the lack of grain boundaries which usually lead to enhanced diffusion in the case of polycrystalline α-Ta and β-Ta films. Thus, superior diffusion properties of a-Ta provide an optimum solution for copper metallization in next-generation silicon microelectronic devices.}, number={5}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Narayan, J. and Bhosle, V. and Tiwari, A. and Gupta, A. and Kumar, P. and Wu, R.}, year={2006}, pages={1948–1954} }
 @article{narayan_bhosle_2006, title={Phase transition and critical issues in structure-property correlations of vanadium oxide}, volume={100}, number={10}, journal={Journal of Applied Physics}, author={Narayan, J. and Bhosle, V. M.}, year={2006} }
 @article{bhosle_tiwari_narayan_2005, title={Epitaxial growth and properties of MoOx(2 < x < 2.75) films}, volume={97}, number={8}, journal={Journal of Applied Physics}, author={Bhosle, V. and Tiwari, A. and Narayan, J.}, year={2005} }
 @inproceedings{gollapudi_bhosle_charit_murty, title={Low stress viscous creep in a ti-3al-2.5v tubing under internal pressurization}, booktitle={TMS 2010 139th Annual Meeting & Exhibition - Supplemental Proceedings, vol 1: Materials processing and properties}, author={Gollapudi, S. and Bhosle, V. and Charit, I. and Murty, K. L.}, pages={755–762} }