@article{lemaire_zhao_williams_walls_shepherd_losego_peterson_parsons_2016, title={Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition}, volume={8}, ISSN={["1944-8244"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000374274900078&KeyUID=WOS:000374274900078}, DOI={10.1021/acsami.6b01195}, abstractNote={Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.}, number={14}, journal={ACS APPLIED MATERIALS & INTERFACES}, author={Lemaire, Paul C. and Zhao, Junjie and Williams, Philip S. and Walls, Howard J. and Shepherd, Sarah D. and Losego, Mark D. and Peterson, Gregory W. and Parsons, Gregory N.}, year={2016}, month={Apr}, pages={9514–9522} }
 @article{alibabaei_farnum_kalanyan_brennaman_losego_parsons_meyer_2014, title={Atomic Layer Deposition of TiO2 on Mesoporous nanolTO: Conductive Core-Shell Photoanodes for Dye-Sensitized Solar Cells}, volume={14}, ISSN={["1530-6992"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000337337100043&KeyUID=WOS:000337337100043}, DOI={10.1021/nl5006433}, abstractNote={Core-shell structures consisting of thin shells of conformal TiO2 deposited on high surface area, conductive Sn-doped In2O3 nanoparticle. Mesoscopic films were synthesized by atomic layer deposition and studied for application in dye-sensitized solar cells. Results obtained with the N719 dye show that short-circuit current densities, open-circuit voltages, and back electron transfer lifetimes all increased with increasing TiO2 shell thickness up to 1.8-2.4 nm and then decline as the thickness was increased further. At higher shell thicknesses, back electron transfer to -Ru(III) is increasingly competitive with transport to the nanoITO core resulting in decreased device efficiencies.}, number={6}, journal={NANO LETTERS}, author={Alibabaei, Leila and Farnum, Byron H. and Kalanyan, Berc and Brennaman, M. Kyle and Losego, Mark D. and Parsons, Gregory N. and Meyer, Thomas J.}, year={2014}, month={Jun}, pages={3255–3261} }
 @article{gorham_gaskins_parsons_losego_hopkins_2014, title={Density dependence of the room temperature thermal conductivity of atomic layer deposition-grown amorphous alumina (Al2O3)}, volume={104}, ISSN={["1077-3118"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000338515900083&KeyUID=WOS:000338515900083}, DOI={10.1063/1.4885415}, abstractNote={We report on the thermal conductivity of atomic layer deposition-grown amorphous alumina thin films as a function of atomic density. Using time domain thermoreflectance, we measure the thermal conductivity of the thin alumina films at room temperature. The thermal conductivities vary ∼35% for a nearly 15% change in atomic density and are substrate independent. No density dependence of the longitudinal sound speeds is observed with picosecond acoustics. The density dependence of the thermal conductivity agrees well with a minimum limit to thermal conductivity model that is modified with a differential effective-medium approximation.}, number={25}, journal={APPLIED PHYSICS LETTERS}, author={Gorham, Caroline S. and Gaskins, John T. and Parsons, Gregory N. and Losego, Mark D. and Hopkins, Patrick E.}, year={2014}, month={Jun} }
 @article{cho_losego_zhang_kim_zuo_petrov_cahill_braun_2014, title={Electrochemically tunable thermal conductivity of lithium cobalt oxide}, volume={5}, journal={Nature Communications}, author={Cho, J. and Losego, M. D. and Zhang, H. G. and Kim, H. and Zuo, J. M. and Petrov, I. and Cahill, D. G. and Braun, P. V.}, year={2014} }
 @article{lee_losego_kim_parsons_2014, title={High performance photocatalytic metal oxide synthetic bi-component nanosheets formed by atomic layer deposition}, volume={1}, ISSN={["2051-6355"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000348204200005&KeyUID=WOS:000348204200005}, DOI={10.1039/c4mh00012a}, abstractNote={Synthetic nanosheets that are ultrathin variants of bulk materials have been acquired using atomic layer deposition (ALD) on dissolvable substrates with a control over layer dimension including single and bilayered “Janus nanosheet” structures. TiO2, ZnO, Al2O3 and TiO2/ZnO nanosheets function as dispersible photocatalysts in aqueous media showing 3× synergistic rate enhancement for bilayered nanosheets.}, number={4}, journal={MATERIALS HORIZONS}, author={Lee, Kyoungmi and Losego, Mark D. and Kim, Do Han and Parsons, Gregory N.}, year={2014}, month={Jul}, pages={419–423} }
 @article{atanasov_losego_gong_sachet_maria_williams_parsons_2014, title={Highly Conductive and Conformal Poly(3,4-ethylenedioxythiophene) (PEDOT) Thin Films via Oxidative Molecular Layer Deposition}, volume={26}, ISSN={["1520-5002"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000337199400019&KeyUID=WOS:000337199400019}, DOI={10.1021/cm500825b}, abstractNote={This work introduces oxidative molecular layer deposition (oMLD) as a chemical route to synthesize highly conductive and conformal poly(3,4-ethylenedioxythiophene) (PEDOT) thin films via sequential vapor exposures of molybdenum(V) chloride (MoCl5, oxidant) and ethylene dioxythiophene (EDOT, monomer) precursors. The growth temperature strongly affects PEDOT’s crystalline structure and electronic conductivity. Films deposited at ∼150 °C exhibit a highly textured crystalline structure, with {010} planes aligned parallel with the substrate. Electrical conductivity of these textured films is routinely above 1000 S cm–1, with the most conductive films exceeding 3000 S cm–1. At lower temperatures (∼100 °C) the films exhibit a random polycrystalline structure and display smaller conductivities. Compared with typical electrochemical, solution-based, and chemical vapor deposition techniques, oMLD PEDOT films achieve high conductivity without the need for additives or postdeposition treatments. Moreover, the sequent...}, number={11}, journal={CHEMISTRY OF MATERIALS}, author={Atanasov, Sarah E. and Losego, Mark D. and Gong, Bo and Sachet, Edward and Maria, Jon-Paul and Williams, Philip S. and Parsons, Gregory N.}, year={2014}, month={Jun}, pages={3471–3478} }
 @article{zhao_losego_lemaire_williams_gong_atanasov_blevins_oldham_walls_shepherd_et al._2014, title={Highly adsorptive, MOF-functionalized nonwoven fiber mats for hazardous gas capture enabled by atomic layer deposition}, volume={1}, number={4}, journal={Advanced Materials Interfaces}, author={Zhao, J. J. and Losego, M. D. and Lemaire, P. C. and Williams, P. S. and Gong, B. and Atanasov, S. E. and Blevins, T. M. and Oldham, C. J. and Walls, H. J. and Shepherd, S. D. and et al.}, year={2014} }
 @article{paisley_gaddy_lebeau_shelton_biegalski_christen_losego_mita_collazo_sitar_et al._2014, title={Smooth cubic commensurate oxides on gallium nitride}, volume={115}, ISSN={["1089-7550"]}, DOI={10.1063/1.4861172}, abstractNote={Smooth, commensurate alloys of ⟨111⟩-oriented Mg0.52Ca0.48O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.}, number={6}, journal={JOURNAL OF APPLIED PHYSICS}, author={Paisley, Elizabeth A. and Gaddy, Benjamin E. and LeBeau, James M. and Shelton, Christopher T. and Biegalski, Michael D. and Christen, Hans M. and Losego, Mark D. and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko and et al.}, year={2014}, month={Feb} }
 @article{kim_losego_hanson_alibabaei_lee_meyer_parsons_2014, title={Stabilizing chromophore binding on TiO2 for long-term stability of dye-sensitized solar cells using multicomponent atomic layer deposition}, volume={16}, ISSN={["1463-9084"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000334602900050&KeyUID=WOS:000334602900050}, DOI={10.1039/c4cp01130a}, abstractNote={Dye sensitized solar cells (DSSCs) are coated with subnanometer oxide coatings to prevent device degradation in ambient humidity and high temperatures.}, number={18}, journal={PHYSICAL CHEMISTRY CHEMICAL PHYSICS}, author={Kim, Do Han and Losego, Mark D. and Hanson, Kenneth and Alibabaei, Leila and Lee, Kyoungmi and Meyer, Thomas J. and Parsons, Gregory N.}, year={2014}, pages={8615–8622} }
 @article{song_vannucci_farnum_lapides_brennaman_kalanyan_alibabaei_concepcion_losego_parsons_et al._2014, title={Visible Light Driven Benzyl Alcohol Dehydrogenation in a Dye-Sensitized Photoelectrosynthesis Cell}, volume={136}, ISSN={["0002-7863"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000338980500035&KeyUID=WOS:000338980500035}, DOI={10.1021/ja505022f}, abstractNote={Light-driven dehydrogenation of benzyl alcohol (BnOH) to benzaldehyde and hydrogen has been shown to occur in a dye-sensitized photoelectrosynthesis cell (DSPEC). In the DSPEC, the photoanode consists of mesoporous films of TiO2 nanoparticles or of core/shell nanoparticles with tin-doped In2O3 nanoparticle (nanoITO) cores and thin layers of TiO2 deposited by atomic layer deposition (nanoITO/TiO2). Metal oxide surfaces were coderivatized with both a ruthenium polypyridyl chromophore in excess and an oxidation catalyst. Chromophore excitation and electron injection were followed by cross-surface electron-transfer activation of the catalyst to -Ru(IV)═O(2+), which then oxidizes benzyl alcohol to benzaldehyde. The injected electrons are transferred to a Pt electrode for H2 production. The nanoITO/TiO2 core/shell structure causes a decrease of up to 2 orders of magnitude in back electron-transfer rate compared to TiO2. At the optimized shell thickness, sustained absorbed photon to current efficiency of 3.7% was achieved for BnOH dehydrogenation, an enhancement of ~10 compared to TiO2.}, number={27}, journal={JOURNAL OF THE AMERICAN CHEMICAL SOCIETY}, author={Song, Wenjing and Vannucci, Aaron K. and Farnum, Byron H. and Lapides, Alexander M. and Brennaman, M. Kyle and Kalanyan, Berc and Alibabaei, Leila and Concepcion, Javier J. and Losego, Mark D. and Parsons, Gregory N. and et al.}, year={2014}, month={Jul}, pages={9773–9779} }
 @article{vannucci_alibabaei_losego_concepcion_kalanyan_parsons_meyer_2013, title={Crossing the divide between homogeneous and heterogeneous catalysis in water oxidation}, volume={110}, ISSN={["0027-8424"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000328858800030&KeyUID=WOS:000328858800030}, DOI={10.1073/pnas.1319832110}, abstractNote={Significance}, number={52}, journal={PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA}, author={Vannucci, Aaron K. and Alibabaei, Leila and Losego, Mark D. and Concepcion, Javier J. and Kalanyan, Berc and Parsons, Gregory N. and Meyer, Thomas J.}, year={2013}, month={Dec}, pages={20918–20922} }
 @article{paisley_craft_losego_lu_gruverman_collazo_sitar_maria_2013, title={Epitaxial PbxZr1-xTiO3 on GaN}, volume={113}, ISSN={["1089-7550"]}, DOI={10.1063/1.4792599}, abstractNote={Epitaxial integration of PbxZr1−xTiO3 (PZT) (111) with GaN (0002) presents the possibility of polarity coupling across a functional-oxide/nitride heteropolar interface. This work describes the synthesis and characterization of such thin film heterostructures by magnetron sputtering, with specific attention given to process optimization. Using x-ray diffraction and electrical characterization, the growth of epitaxial PZT (∼250 nm) on GaN and PZT on MgO/GaN stacks was verified. A two-stage growth process was developed for epitaxial PZT with a deposition temperature of 300 °C and an ex-situ anneal at 650 °C, which was effective in mitigating interfacial reactions and promoting phase-pure perovskite growth. Electrical analysis of interdigital capacitors revealed a nonlinear and hysteretic dielectric response consistent with ferroelectric PZT. Piezoresponse force microscopy (PFM) characterization shows clear evidence of ferroelectric switching, and PFM hysteresis loop analysis shows minimal evidence for direct polarity coupling, but suggests that band offsets which accompany the oxide-nitride heterostructures influence switching.}, number={7}, journal={JOURNAL OF APPLIED PHYSICS}, author={Paisley, E. A. and Craft, H. S. and Losego, M. D. and Lu, H. and Gruverman, A. and Collazo, R. and Sitar, Z. and Maria, J. -P.}, year={2013}, month={Feb} }
 @article{paisley_craft_losego_lu_gruverman_collazo_sitar_maria_2013, title={Epitaxial lead zirconate titanate on gallium nitride (vol 113, 074107, 2013)}, volume={114}, number={23}, journal={Journal of Applied Physics}, author={Paisley, E. A. and Craft, H. S. and Losego, M. D. and Lu, H. and Gruverman, A. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2013} }
 @article{kalanyan_losego_oldham_parsons_2013, title={Low-Temperature Atomic Layer Deposition of Tungsten using Tungsten Hexafluoride and Highly-diluted Silane in Argon}, volume={19}, ISSN={["0948-1907"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000320470300013&KeyUID=WOS:000320470300013}, DOI={10.1002/cvde.201307053}, abstractNote={Abstract}, number={4-6}, journal={CHEMICAL VAPOR DEPOSITION}, author={Kalanyan, Berc and Losego, Mark D. and Oldham, Christopher J. and Parsons, Gregory N.}, year={2013}, month={Jun}, pages={161–166} }
 @article{sachet_losego_guske_franzen_maria_2013, title={Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films}, volume={102}, number={5}, journal={Applied Physics Letters}, author={Sachet, E. and Losego, M. D. and Guske, J. and Franzen, S. and Maria, J. P.}, year={2013} }
 @article{alibabaei_brennaman_norris_kalanyan_song_losego_concepcion_binstead_parsons_meyer_2013, title={Solar water splitting in a molecular photoelectrochemical cell}, volume={110}, ISSN={["0027-8424"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000328061700026&KeyUID=WOS:000328061700026}, DOI={10.1073/pnas.1319628110}, abstractNote={Significance}, number={50}, journal={PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA}, author={Alibabaei, Leila and Brennaman, M. Kyle and Norris, Michael R. and Kalanyan, Berc and Song, Wenjing and Losego, Mark D. and Concepcion, Javier J. and Binstead, Robert A. and Parsons, Gregory N. and Meyer, Thomas J.}, year={2013}, month={Dec}, pages={20008–20013} }
 @article{hanson_losego_kalanyan_ashford_parsons_meyer_2013, title={Stabilization of [Ru(bpy)(2)(4,4 '-(PO3H2)bpy)](2+) on Mesoporous TiO2 with Atomic Layer Deposition of Al2O3}, volume={25}, ISSN={["0897-4756"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000313303400002&KeyUID=WOS:000313303400002}, DOI={10.1021/cm303172w}, abstractNote={ADVERTISEMENT RETURN TO ISSUEPREVCommunicationNEXTStabilization of [Ru(bpy)2(4,4′-(PO3H2)bpy)]2+ on Mesoporous TiO2 with Atomic Layer Deposition of Al2O3Kenneth Hanson†, Mark D. Losego‡, Berç Kalanyan‡, Dennis L. Ashford†, Gregory N. Parsons*‡, and Thomas J. Meyer*†View Author Information† Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States‡ Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States*E-mail: [email protected] (G.N.P.); [email protected] (T.J.M.).Cite this: Chem. Mater. 2013, 25, 1, 3–5Publication Date (Web):December 7, 2012Publication History Received1 October 2012Revised6 December 2012Published online18 December 2012Published inissue 8 January 2013https://doi.org/10.1021/cm303172wCopyright © 2012 American Chemical SocietyRIGHTS & PERMISSIONSArticle Views2519Altmetric-Citations84LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit Read OnlinePDF (567 KB) Get e-AlertsSupporting Info (1)»Supporting Information Supporting Information SUBJECTS:Atomic layer deposition,Chromophores,Desorption,Kinetic parameters,Oxides Get e-Alerts}, number={1}, journal={CHEMISTRY OF MATERIALS}, author={Hanson, Kenneth and Losego, Mark D. and Kalanyan, Berc and Ashford, Dennis L. and Parsons, Gregory N. and Meyer, Thomas J.}, year={2013}, month={Jan}, pages={3–5} }
 @article{hanson_losego_kalanyan_parsons_meyer_2013, title={Stabilizing Small Molecules on Metal Oxide Surfaces Using Atomic Layer Deposition}, volume={13}, ISSN={["1530-6992"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000326356300035&KeyUID=WOS:000326356300035}, DOI={10.1021/nl402416s}, abstractNote={Device lifetimes and commercial viability of dye-sensitized solar cells (DSSCs) and dye-sensitized photoelectrosynthesis cells (DSPECs) are dependent on the stability of the surface bound molecular chromophores and catalysts. Maintaining the integrity of the solution-metal oxide interface is especially challenging in DSPECs for water oxidation where it is necessary to perform high numbers of turnovers, under irradiation in an aqueous environment. In this study, we describe the atomic layer deposition (ALD) of TiO2 on nanocrystalline TiO2 prefunctionalized with the dye molecule [Ru(bpy)2(4,4'-(PO3H2)bpy)](2+) (RuP) as a strategy to stabilize surface bound molecules. The resulting films are over an order of magnitude more photostable than untreated films and the desorption rate constant exponentially decreases with increased thickness of ALD TiO2 overlayers. However, the injection yield for TiO2-RuP with ALD TiO2 also decreases with increasing overlayer thickness. The combination of decreased injection yield and 95% quenched emission suggests that the ALD TiO2 overlayer acts as a competitive electron acceptor from RuP*, effectively nonproductively quenching the excited state. The ALD TiO2 also increases back electron transfer rates, relative to the untreated film, but is independent of overlayer thickness. The results for TiO2-RuP with an ALD TiO2 overlayer are compared with similar films having ALD Al2O3 overlayers.}, number={10}, journal={NANO LETTERS}, author={Hanson, Kenneth and Losego, Mark D. and Kalanyan, Berc and Parsons, Gregory N. and Meyer, Thomas J.}, year={2013}, month={Oct}, pages={4802–4809} }
 @article{losego_hanson_2013, title={Stabilizing molecular sensitizers in aqueous environs}, volume={2}, number={5}, journal={Nano Energy}, author={Losego, M. D. and Hanson, K.}, year={2013}, pages={1067–1069} }
 @article{losego_cahill_2013, title={Thermal transport: Breaking through barriers}, volume={12}, number={5}, journal={Nature Materials}, author={Losego, M. D. and Cahill, D. G.}, year={2013}, pages={382–384} }
 @article{arpin_losego_cloud_ning_mallek_sergeant_zhu_yu_kalanyan_parsons_et al._2013, title={Three-dimensional self-assembled photonic crystals with high temperature stability for thermal emission modification}, volume={4}, ISSN={["2041-1723"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000326472200019&KeyUID=WOS:000326472200019}, DOI={10.1038/ncomms3630}, abstractNote={Selective thermal emission in a useful range of energies from a material operating at high temperatures is required for effective solar thermophotovoltaic energy conversion. Three-dimensional metallic photonic crystals can exhibit spectral emissivity that is modified compared with the emissivity of unstructured metals, resulting in an emission spectrum useful for solar thermophotovoltaics. However, retention of the three-dimensional mesostructure at high temperatures remains a significant challenge. Here we utilize self-assembled templates to fabricate high-quality tungsten photonic crystals that demonstrate unprecedented thermal stability up to at least 1,400 °C and modified thermal emission at solar thermophotovoltaic operating temperatures. We also obtain comparable thermal and optical results using a photonic crystal comprising a previously unstudied material, hafnium diboride, suggesting that refractory metallic ceramic materials are viable candidates for photonic crystal-based solar thermophotovoltaic devices and should be more extensively studied.}, journal={NATURE COMMUNICATIONS}, author={Arpin, Kevin A. and Losego, Mark D. and Cloud, Andrew N. and Ning, Hailong and Mallek, Justin and Sergeant, Nicholas P. and Zhu, Linxiao and Yu, Zongfu and Kalanyan, Berc and Parsons, Gregory N. and et al.}, year={2013}, month={Oct} }
 @article{losego_guske_efremenko_maria_franzen_2011, title={Characterizing the Molecular Order of Phosphonic Acid Self-Assembled Monolayers on Indium Tin Oxide Surfaces}, volume={27}, ISSN={["0743-7463"]}, DOI={10.1021/la201161q}, abstractNote={Self-assembled monolayers (SAMs) of alkanephosphonic acids with chain lengths between 8 and 18 carbon units were formed on thin films of indium tin oxide (ITO) sputter-deposited on silicon substrates with 400 nm thermally grown SiO(2). The silicon substrates, while not intended for use in near-IR or visible optics applications, do provide smooth surfaces that permit systematic engineering of grain size and surface roughness as a function of the sputter pressure. Argon sputter pressures from 4 to 20 mTorr show systematic changes in surface morphology ranging from smooth, micrometer-sized grain structures to <50 nm grains with 3× higher surface roughness. Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy experiments are conducted for alkanephosphonic acids deposited on these wide range of ITO surfaces to evaluate the effects of these morphological features on monolayer ordering. Results indicate that long-chain SAMs are more highly ordered, and have a smaller tilt angle, than short-chain SAMs. Surprisingly, the 1-octadecyl phosphonic acids maintain their order as the lateral grain dimensions of the ITO surface shrink to ∼50 nm. It is only when the ITO surface roughness becomes greater than the SAM chain length (∼15 Å) that SAMs are observed to become relatively disordered.}, number={19}, journal={LANGMUIR}, author={Losego, Mark D. and Guske, Joshua T. and Efremenko, Alina and Maria, Jon-Paul and Franzen, Stefan}, year={2011}, month={Oct}, pages={11883–11888} }
 @article{paisley_losego_gaddy_tweedie_collazo_sitar_irving_maria_2011, title={Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions}, volume={2}, ISSN={["2041-1723"]}, DOI={10.1038/ncomms1470}, abstractNote={Property coupling at interfaces between active materials is a rich source of functionality, if defect densities are low, interfaces are smooth and the microstructure is featureless. Conventional synthesis techniques generally fail to achieve this when materials have highly dissimilar structure, symmetry and bond type—precisely when the potential for property engineering is most pronounced. Here we present a general synthesis methodology, involving systematic control of the chemical boundary conditions in situ, by which the crystal habit, and thus growth mode, can be actively engineered. In so doing, we establish the capability for layer-by-layer deposition in systems that otherwise default to island formation and grainy morphology. This technique is demonstrated via atomically smooth {111} calcium oxide films on (0001) gallium nitride. The operative surfactant-based mechanism is verified by temperature-dependent predictions from ab initio thermodynamic calculations. Calcium oxide films with smooth morphology exhibit a three order of magnitude enhancement of insulation resistance. Property coupling by heteroepitaxy is severely limited in material combinations with highly dissimilar bonding. This report presents a chemical boundary condition methodology to actively engineer two-dimensional film growth in such systems that otherwise collapse into island formation and rough morphologies.}, journal={NATURE COMMUNICATIONS}, author={Paisley, Elizabeth A. and Losego, Mark. D. and Gaddy, Benjamin E. and Tweedie, James S. and Collazo, Ramon and Sitar, Zlatko and Irving, Douglas L. and Maria, Jon-Paul}, year={2011}, month={Sep} }
 @article{losego_craft_paisley_mita_collazo_sitar_maria_2010, title={Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux}, volume={25}, ISSN={["0884-2914"]}, DOI={10.1557/jmr.2010.0096}, abstractNote={The authors report a study of molecular beam deposition of MgO films on amorphous SiO2 and (0001) GaN surfaces over a large range of temperatures (25–400 °C) and molecular oxygen growth pressures (10−7–10−4 Torr). This study provides insight into the growth behavior of an oxide with volatile metal constituents. Unlike other materials containing volatile constituents (e.g., GaAs, PbTiO3), all components of MgO become volatile at normal epitaxial growth temperatures (≥250 °C). Consequently, defining which species is the adsorption controller becomes ambiguous. Different growth regimes are delineated by the critical substrate temperature for Mg re-evaporation and the Mg:O flux ratio. These regimes have impact on phase purity, quartz crystal microbalance calibration, and film microstructure. The universal decay in deposition rate above growth 10−5 Torr O2 is also considered. By introducing a third flux of inert argon gas, rate reduction is attributed to increased molecular scattering and not oxidation of the metal source.}, number={4}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Losego, Mark D. and Craft, H. Spalding and Paisley, Elizabeth A. and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko and Maria, Jon-Paul}, year={2010}, month={Apr}, pages={670–679} }
 @article{losego_maria_2010, title={Reproducibility and Ferroelectric Fatigue of Lead Zirconate Titanate Thin Films Deposited Directly on Copper Via a Composite Gel Architecture}, volume={93}, ISSN={["0002-7820"]}, DOI={10.1111/j.1551-2916.2010.04176.x}, abstractNote={ Integrating ferroelectric lead zirconate titanate (PZT) thin films directly on copper metal foils has high commercialization potential. PZT films on copper foils eliminate costly noble metal or conductive oxide electrodes and make available a flexible substrate technology that can be readily laminated into printed wiring boards. Unlike noble metals, copper substrates are potentially reactive, and therefore susceptible to processing fluctuations that offer negligible consequences to noble metal‐based systems. Herein, the reliability of the composite gel architecture route for synthesizing PZT thin films directly on copper foils is explored. Reproducibility in film properties and avoidance of solution aging effects are demonstrated. Fatigue cycling is used to evaluate electrical durability. Ferroelectric switching with polarization saturation is demonstrated after 1 billion cycles. Loss in spontaneous polarization is recovered with postfatigue annealing demonstrating the high material integrity necessary for commercial device performance, and distinct similarity to the behavior over time with noble metal electrode capacitors. }, number={12}, journal={JOURNAL OF THE AMERICAN CERAMIC SOCIETY}, author={Losego, Mark D. and Maria, Jon-Paul}, year={2010}, month={Dec}, pages={3983–3985} }
 @article{losego_efremenko_rhodes_cerruti_franzen_maria_2009, title={Conductive oxide thin films: Model systems for understanding and controlling surface plasmon resonance}, volume={106}, number={2}, journal={Journal of Applied Physics}, author={Losego, M. D. and Efremenko, A. Y. and Rhodes, C. L. and Cerruti, M. G. and Franzen, S. and Maria, J. P.}, year={2009} }
 @article{losego_fitting kourkoutis_mita_craft_muller_collazo_sitar_maria_2009, title={Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces}, volume={311}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/j.jcrysgro.2008.11.085}, DOI={10.1016/j.jcrysgro.2008.11.085}, abstractNote={Abstract Epitaxial heterostructures incorporating the complex ferroelectric oxide Ba 0.5 Sr 0.5 TiO 3 (BST) and GaN were prepared using a combination of RF magnetron sputtering and metalorganic chemical vapor deposition for the respective layers. The heterostructures were grown on c -plane sapphire substrates and were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM). This analysis showed that at substrate temperatures of 650 °C, BST films grow epitaxially on GaN with a {1 1 1} orientation and that the GaN–BST interface is smooth and abrupt, with disorder confined to grain boundaries and the interface plane. The film morphology is grainy indicating a 3-D growth mode. High-temperature post-deposition annealing studies suggest no interface reactions up to 900 °C. These results demonstrate that complex oxides like BST can be integrated with wide bandgap semiconductors like GaN and open exciting possibilities for new multifunctional devices.}, number={4}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Losego, M.D. and Fitting Kourkoutis, L. and Mita, S. and Craft, H.S. and Muller, D.A. and Collazo, R. and Sitar, Z. and Maria, J.-P.}, year={2009}, month={Feb}, pages={1106–1109} }
 @article{franzen_rhodes_cerruti_gerber_losego_maria_aspnes_2009, title={Plasmonic phenomena in indium tin oxide and ITO-Au hybrid films}, volume={34}, ISSN={["1539-4794"]}, DOI={10.1364/OL.34.002867}, abstractNote={The observation of surface-plasmon resonances in indium tin oxide (ITO) thin films is complemented with the effects of hybrid ITO/Au conducting layers where charge densities can be tuned. Where carrier densities are similar (ITO and nanoparticle Au), the plasmonic behavior is that of a monolithic ITO thin film. Where the carrier density of one layer is much greater than that of the other (ITO and Au metal), boundary conditions lead to cancelation of the surface plasmon. In the latter case a capacitivelike plasmon resonance is observed for sufficiently thin films.}, number={18}, journal={OPTICS LETTERS}, author={Franzen, Stefan and Rhodes, Crissy and Cerruti, Marta and Gerber, Ralph W. and Losego, Mark and Maria, Jon-Paul and Aspnes, D. E.}, year={2009}, month={Sep}, pages={2867–2869} }
 @article{paisley_losego_aygun_craft_maria_2008, title={Barrier layer mechanism engineering in calcium copper titanate thin film capacitors through microstructure control}, volume={104}, ISSN={["1089-7550"]}, DOI={10.1063/1.3033166}, abstractNote={A peak permittivity greater than 10 000 has been achieved for calcium copper titanate (CCT) thin films by engineering a thin film microstructure that maximizes space charge contributions to polarizability. This permittivity is an order of magnitude greater than previous polycrystalline thin film efforts. This unique microstructure control is accomplished using a chemical solution deposition process flow that produces highly dense parallel layers ∼100 nm in thickness. We observe a thickness dependent permittivity where the entire film thickness constitutes the conducting region of a barrier layer capacitor despite the presence of multiple grain boundaries within that thickness. The model predictions are in good agreement with experimental data and are consistent with existing literature reports. These trends in permittivity with dielectric thickness raise new questions regarding the nature of barrier layers in CCT—and specifically, these results suggest that grain boundaries may not always participate as high resistance interlayers.}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Paisley, E. A. and Losego, M. D. and Aygun, S. M. and Craft, H. S. and Maria, J. -P.}, year={2008}, month={Dec} }
 @article{ihlefeld_losego_collazo_borland_maria_2008, title={Defect chemistry of nano-grained barium titanate films}, volume={43}, ISSN={["1573-4803"]}, DOI={10.1007/s10853-007-2135-3}, number={1}, journal={JOURNAL OF MATERIALS SCIENCE}, author={Ihlefeld, Jon F. and Losego, Mark D. and Collazo, Ramon and Borland, William J. and Maria, Jon-Paul}, year={2008}, month={Jan}, pages={38–42} }
 @article{rhodes_cerruti_efremenko_losego_aspnes_maria_franzen_2008, title={Dependence of plasmon polaritons on the thickness of indium tin oxide thin films}, volume={103}, number={9}, journal={Journal of Applied Physics}, author={Rhodes, C. and Cerruti, M. and Efremenko, A. and Losego, M. and Aspnes, D. E. and Maria, J. P. and Franzen, S.}, year={2008} }
 @article{losego_mita_collazo_sitar_maria_2008, title={Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces}, volume={310}, ISSN={["0022-0248"]}, DOI={10.1016/j.jcrysgro.2007.10.002}, abstractNote={Molecular beam deposition systems allow for unparalleled control of film composition and structure. This article addresses the capacity for controlling metal and oxidant fluxes in the Yb/O2 system to access the metastable phase ytterbium monoxide (YbO). Experiments exploring the growth of polycrystalline YbOx films by molecular beam deposition demonstrate that a 2:1 molar ratio of Yb:O2 fluxes is necessary to achieve preferential growth of the divalent oxide. Applying similar deposition conditions to a (0 0 1) GaN surface leads to the growth of epitaxial (1 1 1) YbO films. Similar to other rocksalt oxides grown on GaN surfaces, YbO films display a 3D growth mechanism that leads to a grainy morphology with crystallites of 50 nm lateral dimensions. Rocking curves in ω and φ have full-width half-maximum values of 1.77° and 4.1°, respectively; further improvements in crystal quality appear to be limited by the thermal stability of the YbO phase.}, number={1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Losego, Mark D. and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko and Maria, Jon-Paul}, year={2008}, month={Jan}, pages={51–56} }
 @article{losego_ihlefeld_maria_2008, title={Importance of solution chemistry in preparing sol-gel PZT thin films directly on copper surfaces}, volume={20}, ISSN={["0897-4756"]}, DOI={10.1021/cm070999q}, abstractNote={The ferroelectric material lead zirconate titanate (PZT) has traditionally been considered incompatible with base metal technology because PbO volatility makes conventional thermodynamic equilibrium processing impractical. However, by strategically designing solution chemistry and processing conditions to avoid interfacial reaction, chemical-solution-deposited PZT films can be prepared on copper surfaces without oxidizing the base metal or cracking the oxide film. A limited set of thermal and atmospheric processing conditions to kinetically maintain an unoxidized copper substrate are available and not necessarily optimal for processing sol–gel films. Solutions processed within these confined conditions must form gels with sufficiently reduced organic content and properly consolidated gel networks such that phase-pure and crack-free ceramic films can be crystallized. The current work explores three solution chemistries that use different chelating ligands: alkanolamines, acetylactone, and acetic acid. It i...}, number={1}, journal={CHEMISTRY OF MATERIALS}, author={Losego, Mark D. and Ihlefeld, Jon F. and Maria, Jon-Paul}, year={2008}, month={Jan}, pages={303–307} }
 @article{goodrich_cai_losego_maria_kourkoutis_muller_ziemer_2008, title={Improved epitaxy of barium titanate by molecular beam epitaxy through a single crystalline magnesium oxide template for integration on hexagonal silicon carbide}, volume={26}, ISSN={["2166-2746"]}, DOI={10.1116/1.2889389}, abstractNote={Crystalline MgO(111) has the potential to be an effective template for the heteroepitaxial integration of BTO(111) and other functional oxides on 6H-SiC(0001). Deposition of MgO on 6H-SiC(0001) at 140°C resulted in a twinned structure with only (111) orientation. By heating the MgO(111) after deposition to 650°C at a background pressure of 1.0×10−9Torr or depositing the MgO at 650°C, the twinned structure can be minimized, resulting in a reflection high energy electron diffraction (RHEED) pattern characteristic of random epitaxial islands. The use of a 2nm MgO(111) template layer proved optimal for deposition of crystalline BTO(111) by molecular beam epitaxy on 6H-SiC(0001). The BTO was found to be twinned with a 60° in-plane rotation. The grain formation of the BTO resulted in a transmission dominated RHEED pattern. Deposition of BTO at a higher substrate temperature resulted in large grain formation, 50nm in size, but an increased surface roughness of 1.4±0.1nm over a 1μm2 area. In order to integrate BTO in a multiferroic device with multilayers of BTO(111) and hexagonal ferrites, it will be necessary to optimize the processing conditions to establish a smoother BTO surface for the subsequent heteroepitaxy of the magnetic film.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Goodrich, T. L. and Cai, Z. and Losego, M. D. and Maria, J. -P. and Kourkoutis, L. Fitting and Muller, D. A. and Ziemer, K. S.}, year={2008}, month={May}, pages={1110–1114} }
 @article{craft_collazo_losego_mita_sitar_maria_2008, title={Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface}, volume={92}, ISSN={["0003-6951"]}, DOI={10.1063/1.2887878}, abstractNote={We report an x-ray photoelectron spectroscopy (XPS) study of the CaO∕GaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski–Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO–GaN system. We find 1.0±0.2eV for the valence band offset and a 2.5±0.2eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Craft, H. S. and Collazo, R. and Losego, M. D. and Mita, S. and Sitar, Z. and Maria, J. -P.}, year={2008}, month={Feb} }
 @article{craft_collazo_losego_sitar_maria_2008, title={Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy}, volume={26}, ISSN={["0734-2101"]}, DOI={10.1116/1.3000058}, abstractNote={The authors report a study comparing the surface reactivities of the alkaline earth oxides MgO and CaO with respect to water vapor under ultrahigh and high vacuum conditions. Using x-ray photoelectron spectroscopy and a series of in vacuo exposures spanning ∼10−10Torr vacuum, to 10−6Torr flowing oxygen, the extent of surface hydroxylation was investigated by monitoring the O 1s photoelectron line. After the most aggressive exposures, the MgO surface reacted to form a maximum hydroxyl coverage of ∼1.3 ML (monolayer), while the CaO surface reached a maximum coverage of ∼3.0 ML. Both surface hydroxides could be removed by in vacuo thermal anneals; exposure to 250 and 500°C were required for MgO and CaO, respectively. These results are framed in terms of the suitability of these oxides in complex oxide-compound semiconductor heteroepitaxial multifunctional devices and with respect to understanding the development of surface morphology in epitaxial 111-oriented CaO and MgO thin films.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Craft, H. S. and Collazo, R. and Losego, M. D. and Sitar, Z. and Maria, J. -P.}, year={2008}, month={Nov}, pages={1507–1510} }
 @article{craft_collazo_losego_mita_sitar_maria_2007, title={Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy}, volume={102}, ISSN={["1089-7550"]}, DOI={10.1063/1.2785022}, abstractNote={MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.}, number={7}, journal={JOURNAL OF APPLIED PHYSICS}, author={Craft, H. S. and Collazo, R. and Losego, M. D. and Mita, S. and Sitar, Z. and Maria, J.-P.}, year={2007}, month={Oct} }
 @article{losego_mita_collazo_sitar_maria_2007, title={Epitaxial calcium oxide films deposited on gallium nitride surfaces}, volume={25}, ISSN={["1071-1023"]}, DOI={10.1116/1.2710243}, abstractNote={Solid solutions of rocksalt oxides are proposed for lattice-matched dielectrics in gallium nitride (GaN) electronics. This article explores the epitaxial growth of the rocksalt oxide calcium oxide (CaO) by molecular beam epitaxy on gallium nitride surfaces. As a possible end member to a rocksalt oxide solid solution, it is important to understand the processing space that allows for epitaxial CaO growth. Exposing the GaN surface to the oxidant flux prior to the metal flux is shown to be critical in eliminating polycrystalline growth. The effect of deposition temperature, metal flux, and oxidant flux on the film’s epitaxial crystalline quality is also examined. Optimal epitaxial quality is found for growth temperatures of ⩾600°C and near oxygen pressures of 10−6Torr. Thermal stability of the CaO∕GaN interface is experimentally evaluated. No reaction phases are observed by x-ray diffraction up to 850°C in air and >1100°C in a reducing atmosphere. However, CaO films are found to be extremely reactive with H2O, forming Ca(OH)2 within a few hours when exposed to ambient atmosphere at room temperature.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Losego, Mark D. and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko and Maria, Jon-Paul}, year={2007}, pages={1029–1032} }
 @article{cerruti_rhodes_losego_efremenko_maria_fischer_franzen_genzer_2007, title={Influence of indium-tin oxide surface structure on the ordering and coverage of carboxylic acid and thiol monolayers}, volume={40}, ISSN={["1361-6463"]}, DOI={10.1088/0022-3727/40/14/016}, abstractNote={This paper analyses the variability of self-assembled monolayers (SAMs) formation on ITO depending on the substrate surface features. In particular, we report on the formation of carboxylic acid- and thiol-based SAMs on two lots of commercially prepared indium–tin oxide (ITO) thin films. Contact angle measurements, electrochemical experiments, and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy showed that the quality of monolayers formed differed substantially between the two ITO batches. Only one of the two ITO substrates was capable of forming well-organized thiol- and carboxylic acid-based SAMs. In order to rationalize these observations, atomic force microscopy and x-ray diffraction analyses were carried out, and SAMs were prepared on ITO substrates fabricated by sputtering in our laboratories. An attempt was made to influence the film microstructure and surface morphology by varying substrate temperatures during ITO deposition. Good-quality thiol and carboxylic acid SAMs were obtained on one of the ITO substrates prepared in-house. While our characterization could not single out conclusively one specific parameter in ITO surface structure that could be responsible for good SAMs formation, we could point out homogeneous surface morphology as a relevant factor for the quality of the SAMs. Evidence was also found for ITO crystallographic orientation to be a parameter influencing SAMs organization.}, number={14}, journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS}, author={Cerruti, Marta and Rhodes, Crissy and Losego, Mark and Efremenko, Alina and Maria, Jon-Paul and Fischer, Daniel and Franzen, Stefan and Genzer, Jan}, year={2007}, month={Jul}, pages={4212–4221} }
 @article{goodrich_cai_losego_maria_ziemer_2007, title={Thin, crystalline MgO on hexagonal 6H-SIC(0001) by molecular beam epitaxy for functional oxide integration}, volume={25}, ISSN={["2166-2746"]}, DOI={10.1116/1.2734979}, abstractNote={MgO thin films are proposed as a template for the effective integration of three and four element oxides on wide band gap SiC for next generation multifunctional devices. Oriented, crystalline MgO(111) of 20–380Å is grown on 6H-SiC(0001) by molecular beam epitaxy at a substrate temperature of 140°C using a magnesium effusion cell and a remote oxygen plasma source with ion deflection plates located at the end of the plasma discharge tube and approximately 7in. from the sample surface. Films are conformal to the steps of the cleaned SiC surface with a rms roughness of 0.45±0.05nm. Magnesium adsorption controls the growth rate in an excess oxygen environment with Mg:O flux ratios of 1:99–1:20, where the oxygen flux is the equivalent molecular oxygen. The oxygen plasma, which was determined to be free of ions when the ion deflection plates are energized, does impact nucleation and initial stages of the MgO film formation, and there may be evidence of etching mechanisms involved in the thicker film growth. Chemical and structural thermal stability of 20Å MgO(111)‖6H-SiC(0001) was demonstrated up to 740°C in vacuum for 90min through reflection high-energy electron diffraction and x-ray photoelectron spectroscopy analyses. X-ray diffraction was used to further test the thermal stability of 380Å films in vacuum and in an oxygen environment up to 790°C. As a proof of concept for MgO(111) as an interface for aligned functional oxide growth, barium titanate (111) was deposited on 100Å MgO(111)‖6H-SiC(0001) by rf magnetron sputtering.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Goodrich, T. L. and Cai, Z. and Losego, M. D. and Maria, J.-P. and Ziemer, K. S.}, year={2007}, pages={1033–1038} }
 @article{craft_ihlefeld_losego_collazo_sitar_maria_2006, title={MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy}, volume={88}, ISSN={["1077-3118"]}, DOI={10.1063/1.2201041}, abstractNote={We report on the epitaxial deposition of magnesium oxide films with [111] crystallographic orientation on (0002) GaN by molecular beam epitaxy. Specifically, we use an adsorption controlled growth mechanism to initiate the growth process. Electron diffraction shows a spotty intense pattern without intensity fluctuations during growth and evidence of in-plane twinning. X-ray diffraction reveals the films to be epitaxial with full width at half maximum values of 0.3°, 0.5°, and 1° in 2θ, ϕ, and χ circles, respectively. Wet etching of the GaN surface with a HCl:HF mixture prior to growth is critical for achieving high crystalline quality. Epitaxial growth is observed between room temperature and 650°C, with negligible changes in crystalline quality with increased temperature. Atomic force microscopy analysis shows grainy surfaces with feature sizes near 10nm and rms roughness values of 1.4Å over 1μm2 areas. X-ray diffraction analysis suggests MgO film stability up to 850°C in ex situ air annealing.}, number={21}, journal={APPLIED PHYSICS LETTERS}, author={Craft, H. S. and Ihlefeld, J. F. and Losego, M. D. and Collazo, R. and Sitar, Z. and Maria, J. -P.}, year={2006}, month={May} }
 @article{rhodes_franzen_maria_losego_leonard_laughlin_duscher_weibel_2006, title={Surface plasmon resonance in conducting metal oxides}, volume={100}, ISSN={["1089-7550"]}, DOI={10.1063/1.2222070}, abstractNote={We report the initial observation of surface plasmon resonance (SPR) in a conducting metal oxide thin film. The SPR phenomenon has been observed by attenuated total reflection of near-infrared radiation and is in agreement with electron energy loss spectroscopy measurements. To date, only metals are known to exhibit surface plasmon resonance and only noble metals have practical application. According to theory SPR should be observable in any conductor. This theoretical prediction is verified in the present study. The compositions of many conducting metal oxides are systematically variable, suggesting a significant advance in thin film characterization and innovative possibilities for versatile and sensitive chemical sensing applications.}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Rhodes, Crissy and Franzen, Stefan and Maria, Jon-Paul and Losego, Mark and Leonard, Donovan N. and Laughlin, Brian and Duscher, Gerd and Weibel, Stephen}, year={2006}, month={Sep} }
 @article{losego_maria_2006, title={Synthesis of polycrystalline ytterbium monoxide thin films by molecular beam deposition}, volume={24}, ISSN={["2166-2746"]}, DOI={10.1116/1.2214703}, abstractNote={The synthesis of ytterbium monoxide (YbO) by molecular beam deposition (MBD) is investigated for developing a lattice-matched oxide to gallium nitride. Because Yb2O3 is the thermodynamically stable oxide at atmospheric pressure, YbO has previously only been prepared by high-pressure bulk synthesis reactions. This article demonstrates that through low growth temperature and the kinetic control of molecular fluxes allowed by MBD, the polycrystalline monoxide phase can be stabilized in thin film form on silicon substrates. Once deposited, the YbO rocksalt structure is found to be stable at room temperature and atmospheric pressure. Elemental analysis indicates that films are primarily composed of Yb and O. Elemental concentrations of H, C, and N, which are known to form phases with Yb of similar structure and lattice parameter to YbO, are shown to be below the 1at.% level.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Losego, Mark D. and Maria, Jon-Paul}, year={2006}, pages={2111–2114} }
 @article{losego_jimison_ihlefeld_maria_2005, title={Ferroelectric response from lead zirconate titanate thin films prepared directly on low-resistivity copper substrates}, volume={86}, ISSN={["0003-6951"]}, DOI={10.1063/1.1919388}, abstractNote={We demonstrate films of the well-known ferroelectric lead zirconate titanate (PZT) prepared directly on copper foils by chemical solution deposition (CSD). The films exhibit saturating polarization hysteresis, remanent polarization values of 26μC∕cm2, and permittivities of 800; these properties are comparable to those achieved using semiconductor-grade substrates. The preparation methodology is founded upon an understanding of solution chemistry as opposed to conventional gas-phase ∕ condensed-phase equilibrium approaches. By adopting this technique, base-metal compatibility can be achieved using much lower temperatures, and a broader set of devices can be prepared offering intimate contact with high conductivity, easily patternable, or ferromagnetic metals.}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Losego, MD and Jimison, LH and Ihlefeld, JF and Maria, JP}, year={2005}, month={Apr} }