@article{govindaraju_aleksov_li_okuzumi_wolter_collazo_prater_sitar_2006, title={Comparative study of textured diamond films by thermal conductivity measurements}, volume={85}, ISSN={["1432-0630"]}, DOI={10.1007/s00339-006-3697-7}, number={3}, journal={APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING}, author={Govindaraju, N. and Aleksov, A. and Li, X. and Okuzumi, F. and Wolter, S. D. and Collazo, R. and Prater, J. T. and Sitar, Z.}, year={2006}, month={Nov}, pages={331–335} }
 @article{aleksov_li_govindaraju_gobien_wolter_prater_sitar_2005, title={Silicon-on-diamond: An advanced silicon-on-insulator technology}, volume={14}, ISSN={["1879-0062"]}, DOI={10.1016/j.diamond.2005.01.019}, abstractNote={Silicon-on-diamond (SOD) technology is proposed as an advanced alternative to conventional silicon-on-insulator (SOI) technology. In SOD, the electrical insulator is diamond, the best thermal conductor in nature. In our SOD concept, the diamond film is highly oriented (HOD), 75–100 μm thick and serves as an electrical insulator, heat spreader and substrate. In this paper, we focus on the thermal evaluation of SOD with a Si device layer on the nucleation side of the diamond film. The obtained results indicated that SOD can sustain up to 10-times higher power loads than SOI. The results were experimentally obtained by R(T) measurements of micro-heaters deposited on the Si device layer and by thermal imaging. 3D finite element thermal simulations using ANSYS confirmed that these numbers are in good agreement with expectations.}, number={3-7}, journal={DIAMOND AND RELATED MATERIALS}, author={Aleksov, A and Li, X and Govindaraju, N and Gobien, JM and Wolter, SD and Prater, JT and Sitar, Z}, year={2005}, pages={308–313} }