Jun Liu

Electrical and Computer Engineering

Works (1)

Updated: July 5th, 2023 15:57

2005 journal article

Nickel germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOS

IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(7), 1535–1540.

By: J. Liuⁿ & M. Ozturkⁿ

author keywords: contact resistance; germanosilicide; nickel; source/drain; ultra-shallow junction

10.1109/TED.2005.850613

Find Text @ NCSU

Source: Web Of Science

Added: August 6, 2018

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