@article{fitting_ware_haywood_walter_nemanich_2005, title={Self-organized nanoscale Ge dots and dashes on SiGe/Si superlattices}, volume={98}, ISSN={["1089-7550"]}, DOI={10.1063/1.1993751}, abstractNote={This study explores the self-organization of Ge nanostructures on SiGe/Si superlattices grown on Si substrates with the surface normal tilted from (001) towards (111) by up to 25°. Prior studies found two-dimensional ordering of Ge dots on nominally flat Si(001) surfaces with a very homogeneous size distribution. Our results show that the Ge islands are less ordered for tilted Si(001) substrates. For substrates with a miscut of 25°, Ge dots nucleate on top of the ripples that form approximately perpendicular to the [1-10]Si direction, i.e., perpendicular to the step direction. Additionally, we observe the formation of Ge dashes, which align preferentially along the [1-10]Si direction.}, number={2}, journal={JOURNAL OF APPLIED PHYSICS}, author={Fitting, L and Ware, ME and Haywood, JR and Walter, JJH and Nemanich, RJ}, year={2005}, month={Jul} }