Daryl William Fothergill

Park, J. S., Reitmeier, Z. J., Fothergill, D., Zhang, X. Y., Muth, J. F., & Davis, R. F. (2006). Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179. https://doi.org/10.1016/j.mseb.2005.10.019

Park, J. S., Fothergill, D. W., Wellenius, P., Bishop, S. M., Muth, J. F., & Davis, R. F. (2006). Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5A), 4083–4086. https://doi.org/10.1143/jjap.45.4083

Park, J. S., Fothergill, D. W., Zhang, X. Y., Reitmeier, Z. J., Muth, J. F., & Davis, R. F. (2005). Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259. https://doi.org/10.1143/jjap.44.7254

Muth, J. F., Zhang, X., Cai, A., Fothergill, D., Roberts, J. C., Rajagopal, P., … Linthicum, K. J. (2005). Gallium nitride surface quantum wells. Applied Physics Letters, 87(19).