Ji-Soo Park

Works (5)

Updated: July 5th, 2023 15:56

2008 journal article

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)

JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78.

By: S. Bishop n, C. Reynolds  n, Z. Liliental-Weber *, Y. Uprety *, C. Ebert*, F. Stevie n, J. Park n, R. Davis*

author keywords: Characterization; Chemical vapor deposition processes; Hot-wall epitaxy; Silicon carbide; Semiconducting materials
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Source: Web Of Science
Added: August 6, 2018

2007 article

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89.

By: S. Bishop n, J. Park n, J. Gu *, B. Wagner n, Z. Reltmeier, D. Batchelor n, D. Zakharov *, Z. Liliental-Weber *, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
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Source: Web Of Science
Added: August 6, 2018

2006 journal article

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512.

By: B. Wagner n, Z. Reitmeier n, J. Park n, D. Bachelor n, D. Zakharov *, Z. Liliental-Weber *, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259.

By: J. Park n, D. Fothergill n, X. Zhang n, Z. Reitmeier n, J. Muth n & R. Davis n

author keywords: light emitting diode; ultraviolet; AlGaN; carrier blocking layer; quantum well
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179.

By: J. Park n, Z. Reitmeier n, D. Fothergill n, X. Zhang n, J. Muth n & R. Davis n

author keywords: light emitting diodes; ultraviolet; AlGaN; carrier-blocking layers
Source: Web Of Science
Added: August 6, 2018

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