Ji-Soo Park

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)

Journal of Crystal Growth, 311(1), 72–78.

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Journal of Crystal Growth, 300(1), 83–89.

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

Journal of Crystal Growth, 290(2), 504–512.

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 127(2-3), 169–179.

Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 44(10), 7254–7259.