Ji-Soo Park

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., … Davis, R. F. (2008). Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0). JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78. https://doi.org/10.1016/j.jcrysgro.2008.09.200

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89. https://doi.org/10.1016/j.jcrysgro.2006.10.207

Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. (2006). Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates. JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512. https://doi.org/10.1016/j.jcrysgro.2006.02.011

Park, J. S., Reitmeier, Z. J., Fothergill, D., Zhang, X. Y., Muth, J. F., & Davis, R. F. (2006). Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179. https://doi.org/10.1016/j.mseb.2005.10.019

Park, J. S., Fothergill, D. W., Zhang, X. Y., Reitmeier, Z. J., Muth, J. F., & Davis, R. F. (2005). Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259. https://doi.org/10.1143/jjap.44.7254