Michael Edward Aumer

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

APPLIED PHYSICS LETTERS, 80(14), 2475–2477.

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

APPLIED PHYSICS LETTERS, 80(17), 3099–3101.

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

APPLIED PHYSICS LETTERS, 79(23), 3803–3805.

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

APPLIED PHYSICS LETTERS, 77(6), 821–823.

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

APPLIED PHYSICS LETTERS, 77(1), 97–99.

High optical quality AlInGaN by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(21), 3315–3317.

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.