Michael Edward Aumer

Works (9)

Updated: July 5th, 2023 16:04

2002 article

Effect of H2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1−yNy (0⩽y⩽0.08)

Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., LeBoeuf, S. F., & Bedair, S. M. (2002, April 8). Applied Physics Letters.

By: B. Moody n, P. Barletta n, N. El-Masry n, J. Roberts n, M. Aumer n, S. LeBoeuf n, S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
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UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2002 article

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

Aumer, M. E., LeBoeuf, S. F., Moody, B. F., Bedair, S. M., Nam, K., Lin, J. Y., & Jiang, H. X. (2002, April 29). Applied Physics Letters.

By: M. Aumer n, S. LeBoeuf n, B. Moody n, S. Bedair n, K. Nam *, J. Lin *, H. Jiang *

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 personal communication

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

By: J. Roberts, C. Parker, J. Muth , S. Leboeuf, M. Aumer, S. Bedair, M. Reed

Source: NC State University Libraries
Added: August 6, 2018

2001 article

Self-assembled AlInGaN quaternary superlattice structures

El-Masry, N. A., Behbehani, M. K., LeBoeuf, S. F., Aumer, M. E., Roberts, J. C., & Bedair, S. M. (2001, September 10). Applied Physics Letters.

By: N. El-Masry n, M. Behbehani n, S. LeBoeuf n, M. Aumer n, J. Roberts n & S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

2001 article

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

Aumer, M. E., LeBoeuf, S. F., Moody, B. F., & Bedair, S. M. (2001, December 3). Applied Physics Letters.

By: M. Aumer n, S. LeBoeuf n, B. Moody  n & S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 article

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

Aumer, M. E., LeBoeuf, S. F., Bedair, S. M., Smith, M., Lin, J. Y., & Jiang, H. X. (2000, August 7). Applied Physics Letters.

By: M. Aumer n, S. LeBoeuf n, S. Bedair n, M. Smith *, J. Lin * & H. Jiang *

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 article

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

LeBoeuf, S. F., Aumer, M. E., & Bedair, S. M. (2000, July 3). Applied Physics Letters.

By: S. LeBoeuf n, M. Aumer n & S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

1999 article

High optical quality AlInGaN by metalorganic chemical vapor deposition

Aumer, M. E., LeBoeuf, S. F., McIntosh, F. G., & Bedair, S. M. (1999, November 22). Applied Physics Letters.

By: M. Aumer n, S. LeBoeuf n, F. McIntosh n & S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Source: Web Of Science
Added: August 6, 2018

1997 article

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., El-Masry, N. A., & Bedair, S. M. (1997, March 1). Applied Surface Science.

By: F. McIntosh n, E. Piner  n, J. Roberts n, M. Behbehani n, M. Aumer n, N. El-Masry n, S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Acoustic Wave Resonator Technologies
Source: Web Of Science
Added: August 6, 2018

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