Michael Edward Aumer

Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., LeBoeuf, S. F., & Bedair, S. M. (2002). Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08). APPLIED PHYSICS LETTERS, 80(14), 2475–2477. https://doi.org/10.1063/1.1464225

Aumer, M. E., LeBoeuf, S. F., Moody, B. F., Bedair, S. M., Nam, K., Lin, J. Y., & Jiang, H. X. (2002). Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures. APPLIED PHYSICS LETTERS, 80(17), 3099–3101. https://doi.org/10.1063/1.1469219

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1). Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13).

El-Masry, N. A., Behbehani, M. K., LeBoeuf, S. F., Aumer, M. E., Roberts, J. C., & Bedair, S. M. (2001). Self-assembled AlInGaN quaternary superlattice structures. APPLIED PHYSICS LETTERS, 79(11), 1616–1618. https://doi.org/10.1063/1.1400763

Aumer, M. E., LeBoeuf, S. F., Moody, B. F., & Bedair, S. M. (2001). Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells. APPLIED PHYSICS LETTERS, 79(23), 3803–3805. https://doi.org/10.1063/1.1418453

Aumer, M. E., LeBoeuf, S. F., Bedair, S. M., Smith, M., Lin, J. Y., & Jiang, H. X. (2000). Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures. APPLIED PHYSICS LETTERS, 77(6), 821–823. https://doi.org/10.1063/1.1306648

LeBoeuf, S. F., Aumer, M. E., & Bedair, S. M. (2000). Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells. APPLIED PHYSICS LETTERS, 77(1), 97–99. https://doi.org/10.1063/1.126889

Aumer, M. E., LeBoeuf, S. F., McIntosh, F. G., & Bedair, S. M. (1999). High optical quality AlInGaN by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 75(21), 3315–3317. https://doi.org/10.1063/1.125336

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system. APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101. https://doi.org/10.1016/S0169-4332(96)00992-0