@article{roze_bannov_kim_holton_littlejohn_1998, title={Temperature dependence of impact ionization coefficients in p-Si}, volume={83}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.367303}, DOI={10.1063/1.367303}, abstractNote={An efficient full-band Monte Carlo program for high-energy carrier transport is employed to investigate hole impact ionization in p-Si for a range of electric fields up to 800 kV/cm and lattice temperatures between 77 and 450 K. An empirical expression is developed for the temperature dependence of ionization coefficients. The results are compared with those obtained from existing models. The empirical model agrees well with experiments and other numerically intensive models, providing a means to incorporate these effects into other device simulators and reliability models.}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Roze, K. and Bannov, N. A. and Kim, K. W. and Holton, W. C. and Littlejohn, M. A.}, year={1998}, month={May}, pages={4988–4990} }
 @article{mansour_kim_bannov_littlejohn_1997, title={Transient ballistic transport in GaN}, volume={81}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.363952}, DOI={10.1063/1.363952}, abstractNote={Monte Carlo simulations have been used to study the spatial scales of electron ballistic transport in GaN. The large optical phonon energy (92 meV) and the large intervalley energy separation between the Γ and satellite conduction band valleys (⩾1.5 eV) suggest an increasing role for ballistic electron effects in GaN, especially when compared with most III–V semiconductors such as GaAs. However, the concomitant high polar optical phonon scattering rate in GaN tends to diminish the desirable electron transport properties. The relationships between these two factors have been studied for the range of electric fields up to 140 kV/cm and lattice temperatures between 300 and 600 K. We demonstrate that in most cases electrons in GaN lose their directed average velocity over distances of only 100−200 Å, and ballistic transport occurs only over such short distances. The main cause for the small spatial scales of ballistic transport in GaN is the strong electron–optical phonon coupling which results in rapid relaxation of the directed electron velocity.}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Mansour, N. and Kim, K. W. and Bannov, N. A. and Littlejohn, M. A.}, year={1997}, month={Mar}, pages={2901–2903} }