Irina Bondarenko

Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

Gettering of iron in silicon-on-insulator wafers

APPLIED PHYSICS LETTERS, 71(8), 1107–1109.

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881.