@misc{bremser_dauelsberg_strauch_2005, title={Method for depositing in particular crystalline layers, and device for carrying out the method}, volume={6,972,050}, number={2005 Dec. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Bremser, M. and Dauelsberg, M. and Strauch, G. K.}, year={2005} }
 @misc{davis_nam_zheleva_bremser_2003, title={Gallium nitride semiconductor structures including lateral gallium nitride layers}, volume={6,570,192}, number={2003 May 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Davis, R. F. and Nam, O.-H. and Zheleva, T. and Bremser, M. D.}, year={2003} }
 @misc{davis_nam_zheleva_bremser_2003, title={Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth}, volume={6,602,763}, number={2003 Aug. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Davis, R. F. and Nam, O.-H. and Zheleva, T. and Bremser, M. D.}, year={2003} }
 @article{pozina_edwards_bergman_monemar_bremser_davis_2001, title={Time-resolved photoluminescence in strained GaN layers}, volume={183}, number={1}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Pozina, G. and Edwards, N. V. and Bergman, J. P. and Monemar, B. and Bremser, M. D. and Davis, R. F.}, year={2001}, pages={151–155} }
 @article{pozina_edwards_bergman_paskova_monemar_bremser_davis_2001, title={Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition}, volume={78}, ISSN={["0003-6951"]}, DOI={10.1063/1.1350421}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Pozina, G and Edwards, NV and Bergman, JP and Paskova, T and Monemar, B and Bremser, MD and Davis, RF}, year={2001}, month={Feb}, pages={1062–1064} }
 @misc{davis_nam_zheleva_bremser_2000, title={Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer}, volume={6,051,849}, number={2000 Apr. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Davis, R. F. and Nam, O.-H. and Zheleva, T. and Bremser, M. D.}, year={2000} }
 @article{edwards_bremser_batchelor_buyanova_madsen_yoo_welhkamp_wilmers_cobet_esser_et al._2000, title={Optical characterization of wide bandgap semiconductors}, volume={364}, ISSN={["0040-6090"]}, DOI={10.1016/S0040-6090(99)00903-7}, number={1-2}, journal={THIN SOLID FILMS}, author={Edwards, NV and Bremser, MD and Batchelor, AD and Buyanova, IA and Madsen, LD and Yoo, SD and Welhkamp, T and Wilmers, K and Cobet, C and Esser, N and et al.}, year={2000}, month={Mar}, pages={98–106} }
 @article{buyanova_wagner_chen_edwards_monemar_lindstrom_bremser_davis_amano_akasaki_1999, title={Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride}, volume={60}, number={3}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Buyanova, I. A. and Wagner, M. and Chen, W. M. and Edwards, N. V. and Monemar, B. and Lindstrom, J. L. and Bremser, M. D. and Davis, R. F. and Amano, H. and Akasaki, I.}, year={1999}, pages={1746–1751} }
 @article{skierbiszewski_suski_leszczynski_shin_skowronski_bremser_davis_1999, title={Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999)}, volume={75}, number={20}, journal={Applied Physics Letters}, author={Skierbiszewski, C. and Suski, T. and Leszczynski, M. and Shin, M. and Skowronski, M. and Bremser, M. D. and Davis, R. F.}, year={1999}, pages={3225A} }
 @article{skierbiszewski_suski_leszczynski_shin_skowronski_bremser_davis_1999, title={Evidence for localized Si-donor state and its metastable properties in AlGaN}, volume={74}, ISSN={["0003-6951"]}, DOI={10.1063/1.124195}, number={25}, journal={APPLIED PHYSICS LETTERS}, author={Skierbiszewski, C and Suski, T and Leszczynski, M and Shin, M and Skowronski, M and Bremser, MD and Davis, RF}, year={1999}, month={Jun}, pages={3833–3835} }
 @article{hanser_nam_bremser_thomson_gehrke_zheleva_davis_1999, title={Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN}, volume={8}, ISSN={["1879-0062"]}, DOI={10.1016/S0925-9635(98)00341-0}, number={2-5}, journal={DIAMOND AND RELATED MATERIALS}, author={Hanser, AD and Nam, OH and Bremser, MD and Thomson, DB and Gehrke, T and Zheleva, TS and Davis, RF}, year={1999}, month={Mar}, pages={288–294} }
 @article{kaminska_piotrowska_jasinski_kozubowski_barcz_golaszewska_thomson_davis_bremser_1999, title={Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior}, volume={4S1}, number={G9.9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Kaminska, E. and Piotrowska, A. and Jasinski, J. and Kozubowski, J. and Barcz, A. and Golaszewska, K. and Thomson, D. B. and Davis, R. F. and Bremser, M. D.}, year={1999} }
 @article{chao_stagarescu_downes_ryan_smith_hanser_bremser_davis_1999, title={Observation of highly dispersive surface states on GaN(0001)1x1}, volume={59}, number={24}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Chao, Y. C. and Stagarescu, C. B. and Downes, J. E. and Ryan, P. and Smith, K. E. and Hanser, D. and Bremser, M. D. and Davis, R. F.}, year={1999}, pages={R15586–15589} }
 @article{edwards_batchelor_buyanova_madsen_bremser_davis_aspnes_monemar_1999, title={Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures}, volume={4S1}, DOI={10.1557/s1092578300002830}, number={G3.78}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Edwards, N. V. and Batchelor, A. D. and Buyanova, I. A. and Madsen, L. D. and Bremser, M. D. and Davis, R. F. and Aspnes, D. E. and Monemar, B.}, year={1999} }
 @article{bidnyk_little_schmidt_cho_krasinski_song_goldenberg_yang_perry_bremser_et al._1999, title={Stimulated emission in GaN thin films in the temperature range of 300-700 K}, volume={85}, ISSN={["1089-7550"]}, DOI={10.1063/1.369325}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bidnyk, S and Little, BD and Schmidt, TJ and Cho, YH and Krasinski, J and Song, JJ and Goldenberg, B and Yang, W and Perry, WG and Bremser, MD and et al.}, year={1999}, month={Feb}, pages={1792–1795} }
 @article{bremser_perry_nam_griffis_loesing_ricks_davis_1998, title={Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy}, volume={27}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-998-0392-9}, number={4}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Bremser, MD and Perry, WG and Nam, OH and Griffis, DP and Loesing, R and Ricks, DA and Davis, RF}, year={1998}, month={Apr}, pages={229–232} }
 @article{perry_bremser_davis_1998, title={Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001)}, volume={83}, ISSN={["0021-8979"]}, DOI={10.1063/1.366716}, number={1}, journal={JOURNAL OF APPLIED PHYSICS}, author={Perry, WG and Bremser, MB and Davis, RF}, year={1998}, month={Jan}, pages={469–475} }
 @article{king_barnak_bremser_tracy_ronning_davis_nemanich_1998, title={Cleaning of AlN and GaN surfaces}, volume={84}, ISSN={["0021-8979"]}, DOI={10.1063/1.368814}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={King, SW and Barnak, JP and Bremser, MD and Tracy, KM and Ronning, C and Davis, RF and Nemanich, RJ}, year={1998}, month={Nov}, pages={5248–5260} }
 @article{kaminska_piotrowska_jasinski_kozubowski_barcz_golaszewska_bremser_davis_1998, title={Interfacial microstructure of Ni/Si-based ohmic contacts to GaN}, volume={94}, ISSN={["0587-4246"]}, DOI={10.12693/APhysPolA.94.383}, number={3}, journal={ACTA PHYSICA POLONICA A}, author={Kaminska, E and Piotrowska, A and Jasinski, J and Kozubowski, J and Barcz, A and Golaszewska, K and Bremser, MD and Davis, RF}, year={1998}, month={Sep}, pages={383–386} }
 @article{shan_fischer_hwang_little_hauenstein_xie_song_kim_goldenberg_horning_et al._1998, title={Intrinsic exciton transitions in GaN}, volume={83}, ISSN={["0021-8979"]}, DOI={10.1063/1.366660}, number={1}, journal={JOURNAL OF APPLIED PHYSICS}, author={Shan, W and Fischer, AJ and Hwang, SJ and Little, BD and Hauenstein, RJ and Xie, XC and Song, JJ and Kim, SS and Goldenberg, B and Horning, R and et al.}, year={1998}, month={Jan}, pages={455–461} }
 @article{wisniewski_knap_malzac_camassel_bremser_davis_suski_1998, title={Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance}, volume={73}, ISSN={["1077-3118"]}, DOI={10.1063/1.122273}, number={13}, journal={APPLIED PHYSICS LETTERS}, author={Wisniewski, P and Knap, W and Malzac, JP and Camassel, J and Bremser, MD and Davis, RF and Suski, T}, year={1998}, month={Sep}, pages={1760–1762} }
 @article{nam_zheleva_bremser_davis_1998, title={Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy}, volume={27}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-998-0393-8}, number={4}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Nam, OH and Zheleva, TS and Bremser, MD and Davis, RF}, year={1998}, month={Apr}, pages={233–237} }
 @article{dalmer_restle_sebastian_vetter_hofsass_bremser_ronning_davis_wahl_bharuth-ram_1998, title={Lattice site location studies of ion implanted Li-8 in GaN}, volume={84}, ISSN={["1089-7550"]}, DOI={10.1063/1.368463}, number={6}, journal={JOURNAL OF APPLIED PHYSICS}, author={Dalmer, M and Restle, M and Sebastian, M and Vetter, U and Hofsass, H and Bremser, MD and Ronning, C and Davis, RF and Wahl, U and Bharuth-Ram, K}, year={1998}, month={Sep}, pages={3085–3089} }
 @misc{stutz_mack_bremser_nam_davis_look_1998, title={Photoelectrochemical capacitance-voltage measurements in GaN}, volume={27}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-998-0182-4}, number={5}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Stutz, CE and Mack, M and Bremser, MD and Nam, OH and Davis, RF and Look, DC}, year={1998}, month={May}, pages={L26–L28} }
 @article{edwards_yoo_bremser_horton_perkins_weeks_liu_stall_kuech_davis_et al._1998, title={Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films}, volume={313}, ISSN={["0040-6090"]}, DOI={10.1016/S0040-6090(97)00815-8}, number={1998 Feb.}, journal={THIN SOLID FILMS}, author={Edwards, NV and Yoo, SD and Bremser, MD and Horton, MN and Perkins, NR and Weeks, TW and Liu, H and Stall, RA and Kuech, TF and Davis, RF and et al.}, year={1998}, month={Feb}, pages={187–192} }
 @article{edwards_bremser_davis_batchelor_yoo_karan_aspnes_1998, title={Trends in residual stress for GaN/AlN/6H-SiC heterostructures}, volume={73}, ISSN={["1077-3118"]}, DOI={10.1063/1.122597}, number={19}, journal={APPLIED PHYSICS LETTERS}, author={Edwards, NV and Bremser, MD and Davis, RF and Batchelor, AD and Yoo, SD and Karan, CF and Aspnes, DE}, year={1998}, month={Nov}, pages={2808–2810} }
 @article{zheleva_nam_bremser_davis_1997, title={Dislocation density reduction via lateral epitaxy in selectively grown GaN structures}, volume={71}, ISSN={["0003-6951"]}, DOI={10.1063/1.120091}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Zheleva, TS and Nam, OH and Bremser, MD and Davis, RF}, year={1997}, month={Oct}, pages={2472–2474} }
 @article{davis_weeks_bremser_tanaka_kern_sitar_ailey_perry_wang_1997, title={Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization}, volume={41}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(96)00152-9}, number={2}, journal={SOLID-STATE ELECTRONICS}, author={Davis, RF and Weeks, TW and Bremser, MD and Tanaka, S and Kern, RS and Sitar, Z and Ailey, KS and Perry, WG and Wang, C}, year={1997}, month={Feb}, pages={129–134} }
 @article{davis_bremser_perry_ailey_1997, title={Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates}, volume={17}, ISSN={["0955-2219"]}, DOI={10.1016/S0955-2219(97)00077-0}, number={15-16}, journal={JOURNAL OF THE EUROPEAN CERAMIC SOCIETY}, author={Davis, RF and Bremser, MD and Perry, WG and Ailey, KS}, year={1997}, pages={1775–1779} }
 @article{nam_bremser_ward_nemanich_davis_1997, title={Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy}, volume={36}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.36.L532}, number={5A}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS}, author={Nam, OH and Bremser, MD and Ward, BL and Nemanich, RJ and Davis, RF}, year={1997}, month={May}, pages={L532–L535} }
 @article{bremser_perry_zheleva_edwards_nam_parikh_aspnes_davis_1997, title={Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates}, volume={6}, ISSN={["0925-9635"]}, DOI={10.1016/S0925-9635(96)00626-7}, number={2-4}, journal={DIAMOND AND RELATED MATERIALS}, author={Bremser, MD and Perry, WG and Zheleva, T and Edwards, NV and Nam, OH and Parikh, N and Aspnes, DE and Davis, RF}, year={1997}, month={Mar}, pages={196–201} }
 @article{smith_wolden_bremser_hanser_davis_lampert_1997, title={High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma}, volume={71}, ISSN={["0003-6951"]}, DOI={10.1063/1.120463}, number={25}, journal={APPLIED PHYSICS LETTERS}, author={Smith, SA and Wolden, CA and Bremser, MD and Hanser, AD and Davis, RF and Lampert, WV}, year={1997}, month={Dec}, pages={3631–3633} }
 @inproceedings{rossow_edwards_bremser_kern_liu_davis_aspnes_1997, title={In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency}, DOI={10.1557/proc-449-835}, booktitle={III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Rossow, U. and Edwards, N. V. and Bremser, M. D.. and Kern, R. S. and Liu, H. and Davis, R. F. and Aspnes, D. E.}, year={1997}, pages={835–840} }
 @article{parikh_suvkhanov_lioubtchenko_carlson_bremser_bray_davis_hunn_1997, title={Ion implantation of epitaxial GaN films: Damage, doping and activation}, volume={127}, ISSN={["0168-583X"]}, DOI={10.1016/S0168-583X(97)00076-1}, journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS}, author={Parikh, N and Suvkhanov, A and Lioubtchenko, M and Carlson, E and Bremser, M and Bray, D and Davis, R and Hunn, J}, year={1997}, month={May}, pages={463–466} }
 @article{nam_bremser_zheleva_davis_1997, title={Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy}, volume={71}, number={18}, journal={Applied Physics Letters}, author={Nam, O.-H. and Bremser, M. D. and Zheleva, T. S. and Davis, R. F.}, year={1997}, pages={2698–2640} }
 @article{kaminska_piotrowska_barcz_ilka_guziewicz_kasjaniuk_dynowska_kwiatkowski_bremser_davis_1997, title={Ohmic contacts to GaN by solid-phase regrowth}, volume={92}, ISSN={["0587-4246"]}, DOI={10.12693/APhysPolA.92.819}, number={4}, journal={ACTA PHYSICA POLONICA A}, author={Kaminska, E and Piotrowska, A and Barcz, A and Ilka, L and Guziewicz, M and Kasjaniuk, S and Dynowska, E and Kwiatkowski, S and Bremser, MD and Davis, RF}, year={1997}, month={Oct}, pages={819–823} }
 @article{bergman_bremser_perry_davis_dutta_nemanich_1997, title={Raman analysis of the configurational disorder in AlxGa1-xN films}, volume={71}, ISSN={["0003-6951"]}, DOI={10.1063/1.119367}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Bergman, L and Bremser, MD and Perry, WG and Davis, RF and Dutta, M and Nemanich, RJ}, year={1997}, month={Oct}, pages={2157–2159} }
 @article{edwards_yoo_bremser_zheleva_horton_perkins_weeks_liu_stall_kuech_et al._1997, title={Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films}, volume={50}, ISSN={["0921-5107"]}, DOI={10.1016/s0921-5107(97)00151-7}, number={1-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Edwards, NV and Yoo, SD and Bremser, MD and Zheleva, T and Horton, MN and Perkins, NR and Weeks, TW and Liu, H and Stall, RA and Kuech, TF and et al.}, year={1997}, month={Dec}, pages={134–141} }
 @article{sowers_christman_bremser_ward_davis_nemanich_1997, title={Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications}, volume={71}, DOI={10.1063/1.120052}, number={16}, journal={Applied Physics Letters}, author={Sowers, A. T. and Christman, J. A. and Bremser, M. D. and Ward, B. L. and Davis, R. F. and Nemanich, R. J.}, year={1997}, pages={2289–2291} }
 @article{edwards_yoo_bremser_weeks_nam_davis_liu_stall_horton_perkins_et al._1997, title={Variation of GaN valence bands with biaxial stress and quantification of residual stress}, volume={70}, ISSN={["0003-6951"]}, DOI={10.1063/1.119089}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Edwards, NV and Yoo, SD and Bremser, MD and Weeks, TW and Nam, OH and Davis, RF and Liu, H and Stall, RA and Horton, MN and Perkins, NR and et al.}, year={1997}, month={Apr}, pages={2001–2003} }
 @inproceedings{edwards_yoo_bremser_horton_perkins_weeks_liu_stall_kuech_davis_et al._1997, title={Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters}, DOI={10.1557/proc-449-781}, booktitle={III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Edwards, N. V. and Yoo, S. D. and Bremser, M. D. and Horton, M. N. and Perkins, N. R. and Weeks, T. W. and Liu, H. and Stall, R. A. and Kuech, T. F. and Davis, R. F. and et al.}, year={1997}, pages={781–786} }
 @article{kisielowski_kruger_ruvimov_suski_ager_jones_lilientalweber_rubin_weber_bremser_et al._1996, title={Strain-related phenomena in GaN thin films}, volume={54}, number={24}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Kisielowski, C. and Kruger, J. and Ruvimov, S. and Suski, T. and Ager, J. W. and Jones, E. and Lilientalweber, Z. and Rubin, M. and Weber, E. R. and Bremser, M. D. and et al.}, year={1996}, pages={17745–17753} }