Michael D. Bremser Bremser, M., Dauelsberg, M., & Strauch, G. K. (2005). Method for depositing in particular crystalline layers, and device for carrying out the method. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Gallium nitride semiconductor structures including lateral gallium nitride layers. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. Washington, DC: U.S. Patent and Trademark Office. Pozina, G., Edwards, N. V., Bergman, J. P., Monemar, B., Bremser, M. D., & Davis, R. F. (2001). Time-resolved photoluminescence in strained GaN layers. Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155. Pozina, G., Edwards, N. V., Bergman, J. P., Paskova, T., Monemar, B., Bremser, M. D., & Davis, R. F. (2001). Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 78(8), 1062–1064. https://doi.org/10.1063/1.1350421 Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2000). Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer. Washington, DC: U.S. Patent and Trademark Office. Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). Optical characterization of wide bandgap semiconductors. THIN SOLID FILMS, Vol. 364, pp. 98–106. https://doi.org/10.1016/S0040-6090(99)00903-7 Buyanova, I. A., Wagner, M., Chen, W. M., Edwards, N. V., Monemar, B., Lindstrom, J. L., … Akasaki, I. (1999). Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride. Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751. Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., & Davis, R. F. (1999). Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999). Applied Physics Letters, 75(20), 3225A. Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., & Davis, R. F. (1999). Evidence for localized Si-donor state and its metastable properties in AlGaN. APPLIED PHYSICS LETTERS, 74(25), 3833–3835. https://doi.org/10.1063/1.124195 Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March). Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN. DIAMOND AND RELATED MATERIALS, Vol. 8, pp. 288–294. https://doi.org/10.1016/S0925-9635(98)00341-0 Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Bremser, M. D. (1999). Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9). Chao, Y. C., Stagarescu, C. B., Downes, J. E., Ryan, P., Smith, K. E., Hanser, D., … Davis, R. F. (1999). Observation of highly dispersive surface states on GaN(0001)1x1. Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589. Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999). Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). https://doi.org/10.1557/s1092578300002830 Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., … Davis, R. F. (1999). Stimulated emission in GaN thin films in the temperature range of 300-700 K. JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795. https://doi.org/10.1063/1.369325 Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232. https://doi.org/10.1007/s11664-998-0392-9 Perry, W. G., Bremser, M. B., & Davis, R. F. (1998). Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001). JOURNAL OF APPLIED PHYSICS, 83(1), 469–475. https://doi.org/10.1063/1.366716 King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. (1998). Cleaning of AlN and GaN surfaces. JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260. https://doi.org/10.1063/1.368814 Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Davis, R. F. (1998, September). Interfacial microstructure of Ni/Si-based ohmic contacts to GaN. ACTA PHYSICA POLONICA A, Vol. 94, pp. 383–386. https://doi.org/10.12693/APhysPolA.94.383 Shan, W., Fischer, A. J., Hwang, S. J., Little, B. D., Hauenstein, R. J., Xie, X. C., … Davis, R. F. (1998). Intrinsic exciton transitions in GaN. JOURNAL OF APPLIED PHYSICS, 83(1), 455–461. https://doi.org/10.1063/1.366660 Wisniewski, P., Knap, W., Malzac, J. P., Camassel, J., Bremser, M. D., Davis, R. F., & Suski, T. (1998). Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance. APPLIED PHYSICS LETTERS, 73(13), 1760–1762. https://doi.org/10.1063/1.122273 Nam, O. H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. (1998, April). Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 233–237. https://doi.org/10.1007/s11664-998-0393-8 Dalmer, M., Restle, M., Sebastian, M., Vetter, U., Hofsass, H., Bremser, M. D., … Bharuth-Ram, K. (1998). Lattice site location studies of ion implanted Li-8 in GaN. JOURNAL OF APPLIED PHYSICS, 84(6), 3085–3089. https://doi.org/10.1063/1.368463 Stutz, C. E., Mack, M., Bremser, M. D., Nam, O. H., Davis, R. F., & Look, D. C. (1998, May). Photoelectrochemical capacitance-voltage measurements in GaN. https://doi.org/10.1007/s11664-998-0182-4 Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films. THIN SOLID FILMS, Vol. 313, pp. 187–192. https://doi.org/10.1016/S0040-6090(97)00815-8 Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998). Trends in residual stress for GaN/AlN/6H-SiC heterostructures. APPLIED PHYSICS LETTERS, 73(19), 2808–2810. https://doi.org/10.1063/1.122597 Zheleva, T. S., Nam, O. H., Bremser, M. D., & Davis, R. F. (1997). Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. APPLIED PHYSICS LETTERS, 71(17), 2472–2474. https://doi.org/10.1063/1.120091 Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization. SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134. https://doi.org/10.1016/S0038-1101(96)00152-9 Davis, R. F., Bremser, M. D., Perry, W. G., & Ailey, K. S. (1997). Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 17, pp. 1775–1779. https://doi.org/10.1016/S0955-2219(97)00077-0 Nam, O. H., Bremser, M. D., Ward, B. L., Nemanich, R. J., & Davis, R. F. (1997). Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36(5A), L532–L535. https://doi.org/10.1143/JJAP.36.L532 Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201. https://doi.org/10.1016/S0925-9635(96)00626-7 Smith, S. A., Wolden, C. A., Bremser, M. D., Hanser, A. D., Davis, R. F., & Lampert, W. V. (1997). High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma. APPLIED PHYSICS LETTERS, 71(25), 3631–3633. https://doi.org/10.1063/1.120463 Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1997). In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840. https://doi.org/10.1557/proc-449-835 Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., … Hunn, J. (1997, May). Ion implantation of epitaxial GaN films: Damage, doping and activation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 463–466. https://doi.org/10.1016/S0168-583X(97)00076-1 Nam, O.-H., Bremser, M. D., Zheleva, T. S., & Davis, R. F. (1997). Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Applied Physics Letters, 71(18), 2698–2640. Kaminska, E., Piotrowska, A., Barcz, A., Ilka, L., Guziewicz, M., Kasjaniuk, S., … Davis, R. F. (1997, October). Ohmic contacts to GaN by solid-phase regrowth. ACTA PHYSICA POLONICA A, Vol. 92, pp. 819–823. https://doi.org/10.12693/APhysPolA.92.819 Bergman, L., Bremser, M. D., Perry, W. G., Davis, R. F., Dutta, M., & Nemanich, R. J. (1997). Raman analysis of the configurational disorder in AlxGa1-xN films. APPLIED PHYSICS LETTERS, 71(15), 2157–2159. https://doi.org/10.1063/1.119367 Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997). Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141. https://doi.org/10.1016/s0921-5107(97)00151-7 Sowers, A. T., Christman, J. A., Bremser, M. D., Ward, B. L., Davis, R. F., & Nemanich, R. J. (1997). Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications. Applied Physics Letters, 71(16), 2289–2291. https://doi.org/10.1063/1.120052 Edwards, N. V., Yoo, S. D., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress and quantification of residual stress. APPLIED PHYSICS LETTERS, 70(15), 2001–2003. https://doi.org/10.1063/1.119089 Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786. https://doi.org/10.1557/proc-449-781 Kisielowski, C., Kruger, J., Ruvimov, S., Suski, T., Ager, J. W., Jones, E., … Davis, R. F. (1996). Strain-related phenomena in GaN thin films. Physical Review. B, Condensed Matter and Materials Physics, 54(24), 17745–17753.