Naoya Inoue

Works (2)

Updated: July 5th, 2023 15:56
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2007 journal article

Analysis of interface states in LaSixOy metal-insulator-semiconductor structures

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(10A), 6480–6488.

By: N. Inoue n, D. Lichtenwalner n, J. Jur n & A. Kingon n

co-author countries: United States of America 🇺🇸
author keywords: high-k dielectric; MOS capacitor; lanthanum silicate; interface state; fixed charge
Source: Web Of Science
Added: August 6, 2018

2006 journal article

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.

By: D. Lichtenwalner*, J. Jur*, R. Jha n, N. Inoue*, B. Chen n, V. Misra n , A. Kingon*

co-author countries: Australia 🇦🇺 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018