Works (2)
Updated: July 5th, 2023 15:56
2007 article
Analysis of Interface States in LaSixOy Metal–Insulator–Semiconductor Structures
Inoue, N., Lichtenwalner, D. J., Jur, J. S., & Kingon, A. I. (2007, October 1). Japanese Journal of Applied Physics.
author keywords: high-k dielectric; MOS capacitor; lanthanum silicate; interface state; fixed charge
topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Ferroelectric and Negative Capacitance Devices
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2006 article
High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes
Lichtenwalner, D. J., Jur, J. S., Jha, R., Inoue, N., Chen, B., Misra, V., & Kingon, A. I. (2006, January 1). Journal of The Electrochemical Society, Vol. 153, pp. F210–214.
topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Advancements in Semiconductor Devices and Circuit Design
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018