Works (2)
Updated: July 5th, 2023 15:56
2007 journal article
Analysis of interface states in LaSixOy metal-insulator-semiconductor structures
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(10A), 6480–6488.
author keywords: high-k dielectric; MOS capacitor; lanthanum silicate; interface state; fixed charge
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2006 journal article
High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
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