Works (8)

Updated: July 5th, 2023 15:55

2009 article

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luening, J. (2009, March). MICROELECTRONIC ENGINEERING, Vol. 86, pp. 224–234.

By: G. Lucovsky n, S. Lee n, J. Long n, H. Seo  n & J. Luening

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: High-K gate dielectrics; MOS devices; Interfacial transition regions; X-ray absorption spectroscopy; Spectroscopic ellipsometry; Di-vacancy defects; Native Ge dielectrics; Ge Substrates
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Tribo-Induced Melting Transition at a Sliding Asperity Contact

PHYSICAL REVIEW LETTERS, 103(20).

By: B. Dawson n, S. Lee n & J. Krim n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: B. Dawson n, S. Lee n & J. Krim n 

Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics

THIN SOLID FILMS, 517(1), 437–440.

By: S. Lee n, H. Seo n, G. Lucovsky n, L. Fleming  n, M. Ulrich n & J. Luening

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Thin film high-k dielectrics; Non-crystalline transition metal oxides; Nano-crystalline transition metal oxides; Bulk defects; Intrinsic bonding defects; Divacancies
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates

THIN SOLID FILMS, 517(1), 155–158.

By: S. Lee n, J. Long n, G. Lucovsky n & J. Luening

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Ge/dielectric interfaces; Remote plasma nitridation of Ge; Band edge defects; Remote plasma deposition; Thermal annealing
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Dynamics of vapor-phase organophosphates on silicon and OTS

TRIBOLOGY LETTERS, 27(3), 269–276.

By: W. Neeyakorn n, M. Varma n, C. Jaye n, J. Burnette n, S. Lee n, R. Nemanich n, C. Grant n , J. Krim n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: W. Neeyakorn n, M. Varma n, C. Jaye n, J. Burnette n, S. Lee n, R. Nemanich n, C. Grant n , J. Krim n 

author keywords: vapor phase lubricants; friction; QCM; nanotribology; SAMS; silicon
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 article

Spectroscopic studies of O-vacancy defects in transition metal oxides

Lucovsky, G., Luening, J., Fleming, L. B., Ulrich, M. D., Rowe, J. E., Seo, H., … Bersuker, G. (2007, October). JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18, pp. S263–S266.

By: G. Lucovsky n, J. Luening, L. Fleming n, M. Ulrich n, J. Rowe*, H. Seo n, S. Lee n, P. Lysaght, G. Bersuker

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2007 article

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors

Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., … Cressler, J. D. (2007, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 54, pp. 1931–1937.

By: D. Chen*, E. Mamouni*, X. Zhou *, R. Schrimpf *, D. Fleetwood*, K. Galloway *, S. Lee n, H. Seo n ...

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: alternative dielectrics; bias-temperature instability; HfSiON; nitridation; total-dose irradiation
Source: Web Of Science
Added: August 6, 2018

2006 journal article

STM, QCM, and the windshield wiper effect: A joint theoretical-experimental study of adsorbate mobility and lubrication at high sliding rates

LANGMUIR, 22(23), 9606–9609.

By: M. Abdelmaksoud n, S. Lee n, C. Padgett n, D. Irving n, D. Brenner n & J. Krim n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: M. Abdelmaksoud n, S. Lee n, C. Padgett n, D. Irving n, D. Brenner n & J. Krim n 

Sources: Web Of Science, ORCID
Added: August 6, 2018

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