Sang Min Lee

Tribo-Induced Melting Transition at a Sliding Asperity Contact

PHYSICAL REVIEW LETTERS, 103(20).

Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics

THIN SOLID FILMS, 517(1), 437–440.

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luening, J. (2009, March). MICROELECTRONIC ENGINEERING, Vol. 86, pp. 224–234.

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates

THIN SOLID FILMS, 517(1), 155–158.

Dynamics of vapor-phase organophosphates on silicon and OTS

TRIBOLOGY LETTERS, 27(3), 269–276.

Spectroscopic studies of O-vacancy defects in transition metal oxides

Lucovsky, G., Luening, J., Fleming, L. B., Ulrich, M. D., Rowe, J. E., Seo, H., … Bersuker, G. (2007, October). JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18, pp. S263–S266.

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors

Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., … Cressler, J. D. (2007, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 54, pp. 1931–1937.

STM, QCM, and the windshield wiper effect: A joint theoretical-experimental study of adsorbate mobility and lubrication at high sliding rates

LANGMUIR, 22(23), 9606–9609.