@article{oneil_ozturk_violette_batchelor_christensen_maher_1997, title={Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine}, volume={144}, ISSN={["0013-4651"]}, DOI={10.1149/1.1838003}, abstractNote={We have previously reported a process for low temperature selective silicon epitaxy using Si 2 H 6 , H 2 , and Cl 2 in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor. Selective deposition implies that growth occurs on the Si surface but not on any of the surrounding insulator surfaces. Using this method and process chemistry, the level of Cl species required to maintain adequate selectivity has been greatly reduced in comparison to SiH 2 Cl 3 -based, conventional CVD approaches. In this report, we have extended upon the previous work and provide information regarding the selectivity of the silicon deposition process to variations in the growth conditions. We have investigated the selectivity of the process to variations in disilane flow/partial pressure, growth temperature, and system contamination. We demonstrate that increases in either the Si 2 H 6 partial pressure or flow rate, the process temperature, or the source contamination levels can lead to selectivity degradation. In regard to the structural quality of the selective epitaxial layers, we have observed epitaxial defects that have appeared to be a strong function of two basic conditions: the contamination level of the process and the chlorine flow rate or chlorine partial pressure. Overall, the results in this study indicate several process conditions that can inhibit the quality of a selective silicon deposition process developed for single-wafer manufacturing.}, number={9}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={ONeil, PA and Ozturk, MC and Violette, KE and Batchelor, D and Christensen, K and Maher, DM}, year={1997}, month={Sep}, pages={3309–3315} }
 @article{li_mirabedini_kuehn_wortman_ozturk_batchelor_christensen_maher_1997, title={Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications}, volume={71}, DOI={10.1063/1.120344}, abstractNote={In situ boron-doped polycrystalline Si1−xGex (x>0.4) films have been formed on the thermally grown oxides in a rapid thermal chemical vapor deposition processor using SiH4-GeH4-B2H6-H2 gas system. Our results showed that in situ boron-doped Si1−xGex films can be directly deposited on the oxide surface, in contrast to the rapid thermal deposition of undoped silicon-germanium (Si1−xGex) films on oxides which is a partially selective process and requires a thin silicon film pre-deposition to form a continuous film. For the in situ boron-doped Si1−xGex films, we observed that with the increase of the germane percentage in the gas source, the Ge content and the deposition rate of the film are increased, while its resistivity is decreased down to 0.66 mΩ cm for a Ge content of 73%. Capacitance-voltage characteristics of p-type metal-oxide-semiconductor capacitors with p+-Si1−xGex gates showed negligible polydepletion effect for a 75 Å gate oxide, indicating that a high doping level of boron at the poly-Si1−xGex/oxide interface was achieved.}, number={23}, journal={Applied Physics Letters}, author={Li, V. Z. Q. and Mirabedini, M. R. and Kuehn, R. T. and Wortman, J. J. and Ozturk, M. C. and Batchelor, D. and Christensen, K. and Maher, D. M.}, year={1997}, pages={3388–3390} }