@article{claflin_lucovsky_1998, title={Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers}, volume={16}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Claflin, B. and Lucovsky, G.}, year={1998}, pages={2154–2158} }
 @article{claflin_binger_lucovsky_1998, title={Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers}, volume={16}, ISSN={["1520-8559"]}, DOI={10.1116/1.581297}, abstractNote={Interface formation between reactively sputtered tungsten nitride (WNx) or titanium nitride (TiNx) metallic films and thermally grown silicon dioxide (SiO2) layers is studied by interrupted growth with on-line Auger electron spectroscopy. For both composite metals, growth proceeds directly without a metal precursor layer. The chemical stability of these WNx/SiO2 and TiNx/SiO2 interfaces is investigated by rapid thermal annealing up to 850 °C. The WNx/SiO2 interface is stable up to 650 °C while TiNx/SiO2 is stable below 850 °C. Metal–oxide–semiconductor capacitors have been fabricated with WNx and TiNx gates and 7.5 nm thick thermal oxide gate dielectrics with interface trap densities, Dit<2×1011 cm−2 eV−1. Capacitance–voltage and current–voltage measurements indicate the Fermi level for TiNx lies near midgap in Si, while for WNx it lies closer to the valence band.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Claflin, B and Binger, M and Lucovsky, G}, year={1998}, pages={1757–1761} }
 @article{lucovsky_koh_chaflin_hinds_1998, title={Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal}, volume={123}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(97)00528-X}, abstractNote={Transition regions at SiSiO2 interfaces contain su☐ide bonding arrangements which contribute to interface roughness and may give rise to electronically active defects. Interfacial transition regions with su☐ide bonding are a direct result of thermal and plasma-assisted oxidation at temperatures up to at least 800°C, but sub-oxide bonding is significantly reduced following a 30 s, 900°C RTA. The kinetics of annealing are essentially the same as those for separation of homogeneous sub-oxide thin films (SiOx, x < 2) into silicon nanocrystals and stoichiometric SiO2.}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Koh, K and Chaflin, B and Hinds, B}, year={1998}, month={Jan}, pages={490–495} }
 @article{lucovsky_banerjee_hinds_claflin_koh_yang_1997, title={Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing}, volume={36}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(97)00049-x}, abstractNote={Abstract Combining previously reported optical second harmonic generation (SHG) data with i) newly-reported X-ray photoelectron spectroscopy (XPS) data and ii) the Auger electron spectroscopy (AES) results presented in this paper demonstrates that interfacial sub-oxide bonding (SiOx, x}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G and Banerjee, A and Hinds, B and Claflin, B and Koh, K and Yang, H}, year={1997}, month={Jun}, pages={207–210} }