Bruce B. Claflin

Claflin, B., & Lucovsky, G. (1998). Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2154–2158.

Claflin, B., Binger, M., & Lucovsky, G. (1998). Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1757–1761. https://doi.org/10.1116/1.581297

Lucovsky, G., Koh, K., Chaflin, B., & Hinds, B. (1998, January). Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal. APPLIED SURFACE SCIENCE, Vol. 123, pp. 490–495. https://doi.org/10.1016/S0169-4332(97)00528-X

Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997, June). Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing. MICROELECTRONIC ENGINEERING, Vol. 36, pp. 207–210. https://doi.org/10.1016/s0167-9317(97)00049-x