@article{wellenius_suresh_luo_lunardi_muth_2009, title={An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel}, volume={5}, url={http://dx.doi.org/10.1109/jdt.2009.2024012}, DOI={10.1109/JDT.2009.2024012}, number={12}, journal={Journal of Display Technology}, author={Wellenius, P. and Suresh, A. and Luo, H. J. and Lunardi, Leda and Muth, J. F.}, year={2009}, month={Dec}, pages={438–445} }
 @article{suresh_novak_wellenius_misra_muth_2009, title={Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric}, volume={94}, DOI={10.1063/1.3106629}, number={12}, journal={Applied Physics Letters}, author={Suresh, A. and Novak, S. and Wellenius, P. and Misra, Veena and Muth, J. F.}, year={2009} }
 @article{wellenius_suresh_foreman_everitt_muth_2008, title={A visible transparent electroluminescent europium doped gallium oxide device}, volume={146}, DOI={10.1016/j.mseb.2007.07.060}, number={1-3}, journal={Materials Science & Engineering. B, Solid-state Materials for Advanced Technology}, author={Wellenius, P. and Suresh, A. and Foreman, J. V. and Everitt, H. O. and Muth, J. F.}, year={2008}, pages={252–255} }
 @article{suresh_muth_2008, title={Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors}, volume={92}, DOI={10.1063/1.2824758}, number={3}, journal={Applied Physics Letters}, author={Suresh, A. and Muth, J. F.}, year={2008} }
 @article{sarkar_suresh_myers_muth_misra_2008, title={Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric}, volume={92}, DOI={10.1063/1.2918981}, number={22}, journal={Applied Physics Letters}, author={Sarkar, S. and Suresh, A. and Myers, F. B. and Muth, J. F. and Misra, Veena}, year={2008} }
 @article{suresh_gollakota_wellenius_dhawan_muth_2008, title={Transparent, high mobility of InGaZnO thin films deposited by PLD}, volume={516}, DOI={10.1016/j.tsf.2007.03.153}, number={7}, journal={Thin Solid Films}, author={Suresh, A. and Gollakota, P. and Wellenius, P. and Dhawan, A. and Muth, J. F.}, year={2008}, pages={1326–1329} }
 @inproceedings{suresh_wellenius_muth_2007, title={High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material}, DOI={10.1109/iedm.2007.4419007}, booktitle={2007 IEEE International Electron Devices Meeting, vols 1 and 2}, author={Suresh, A. and Wellenius, P. and Muth, J. F.}, year={2007}, pages={587–590} }
 @article{zhang_dhawan_wellenius_suresh_muth_2007, title={Planar ZnO ultraviolet modulator}, volume={91}, DOI={10.1063/1.2770995}, number={7}, journal={Applied Physics Letters}, author={Zhang, X. Y. and Dhawan, A. and Wellenius, P. and Suresh, A. and Muth, J. F.}, year={2007} }
 @article{suresh_wellenius_dhawan_muth_2007, title={Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors}, volume={90}, DOI={10.1063/1.2716355}, number={12}, journal={Applied Physics Letters}, author={Suresh, A. and Wellenius, P. and Dhawan, A. and Muth, J.}, year={2007} }