@article{wellenius_suresh_luo_lunardi_muth_2009, title={An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel}, volume={5}, ISSN={["1558-9323"]}, url={http://dx.doi.org/10.1109/jdt.2009.2024012}, DOI={10.1109/JDT.2009.2024012}, abstractNote={In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.}, number={12}, journal={JOURNAL OF DISPLAY TECHNOLOGY}, author={Wellenius, Patrick and Suresh, Arun and Luo, Haojun and Lunardi, Leda M. and Muth, John F.}, year={2009}, month={Dec}, pages={438–445} }
 @article{suresh_novak_wellenius_misra_muth_2009, title={Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric}, volume={94}, ISSN={["1077-3118"]}, DOI={10.1063/1.3106629}, abstractNote={A transparent memory device has been developed based on an indium gallium zinc oxide thin film transistor by incorporating platinum nanoparticles in the gate dielectric stack as the charge storage medium. The transfer characteristics of the device show a large clockwise hysteresis due to electron trapping and are attributed to the platinum nanoparticles. Effect of the gate bias stress (program voltage) magnitude, duration, and polarity on the memory window characteristics has been studied. Charge retention measurements were carried out and a loss of less than 25% of the trapped elec-trons was observed over 104 s indicating promising application as nonvolatile memory.}, number={12}, journal={APPLIED PHYSICS LETTERS}, author={Suresh, Arun and Novak, Steven and Wellenius, Patrick and Misra, Veena and Muth, John F.}, year={2009}, month={Mar} }
 @article{wellenius_suresh_foreman_everitt_muth_2008, title={A visible transparent electroluminescent europium doped gallium oxide device}, volume={146}, ISSN={["0921-5107"]}, DOI={10.1016/j.mseb.2007.07.060}, abstractNote={Beta phase gallium oxide thin films deposited by pulsed laser deposition are efficient hosts for rare earth metals such as europium. In this study europium doped gallium oxide deposited on glass substrates is used to make red (611 nm) electroluminescent devices that are transparent to the visible spectrum. The conducting electrodes used are indium tin oxide (ITO), and a novel indium gallium zinc oxide (IGZO) layer also deposited by pulsed laser deposition. The origin of the red emission is the 5D0 to 7F2 transition and is consistent with photoluminescence and cathodoluminescence results. The turn on voltage of the device is about 45 V ac, and the device appears to be robust, operating at elevated voltages without degradation.}, number={1-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Wellenius, P. and Suresh, A. and Foreman, J. V. and Everitt, H. O. and Muth, J. F.}, year={2008}, month={Jan}, pages={252–255} }
 @article{suresh_muth_2008, title={Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors}, volume={92}, ISSN={["0003-6951"]}, DOI={10.1063/1.2824758}, abstractNote={The effects of bias stress on transistor performance are important when considering nontraditional channel materials for thin film transistors. Applying a gate bias stress to indium gallium zinc oxide transparent thin film transistors was found to induce a parallel threshold voltage shift without changing the field effect mobility or the subthreshold gate voltage swing. The threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge tunneling mechanism resulting in trapped negative charge screening the applied gate voltage.}, number={3}, journal={APPLIED PHYSICS LETTERS}, author={Suresh, A. and Muth, J. F.}, year={2008}, month={Jan} }
 @article{sarkar_suresh_myers_muth_misra_2008, title={Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric}, volume={92}, ISSN={["0003-6951"]}, DOI={10.1063/1.2918981}, abstractNote={A hybrid inorganic-organic device has been fabricated by incorporating redox active molecules in indium gallium zinc oxide thin film transistors. These devices show a clear modulation of source-drain current characteristics, which is associated with the quantized energy states of the redox active molecules. The molecules show discreet redox peaks in the current characteristics of transistors and a true-molecular-based charge transport has been demonstrated in a completely solid state device.}, number={22}, journal={APPLIED PHYSICS LETTERS}, author={Sarkar, Smita and Suresh, Arun and Myers, Frank B. and Muth, John F. and Misra, Veena}, year={2008}, month={Jun} }
 @article{suresh_gollakota_wellenius_dhawan_muth_2008, title={Transparent, high mobility of InGaZnO thin films deposited by PLD}, volume={516}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2007.03.153}, abstractNote={Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 1019 carriers/cm3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm2/V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO3(ZnO)x with x ≤ 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential.}, number={7}, journal={THIN SOLID FILMS}, author={Suresh, Arun and Gollakota, Praveen and Wellenius, Patrick and Dhawan, Anuj and Muth, John F.}, year={2008}, month={Feb}, pages={1326–1329} }
 @article{suresh_wellenius_muth_2007, title={High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material}, ISBN={["978-1-4244-1507-6"]}, ISSN={["2380-9248"]}, DOI={10.1109/iedm.2007.4419007}, abstractNote={The fabrication of high performance amorphous indium gallium zinc oxide (IGZO) transparent thin film transistors (TTFT) and their bias stress stability is presented. N-channel enhancement mode devices were fabricated with an extracted field effect mobility of ~ 11-15 cm2 V-1s-1, on/off current ratios > 107, subthreshold gate voltage swing of 0.20-0.25 V/decade, low off-state currents and good saturation. Low and tunable threshold voltages of 1-2 V were achieved. We conclude that a charge trapping mechanism at the semiconductor/dielectric interface is responsible for the threshold voltage shift after a gate bias stress. The threshold voltage is recovered when the bias is removed.}, journal={2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2}, author={Suresh, Arun and Wellenius, Patrick and Muth, John F.}, year={2007}, pages={587–590} }
 @article{zhang_dhawan_wellenius_suresh_muth_2007, title={Planar ZnO ultraviolet modulator}, volume={91}, ISSN={["0003-6951"]}, DOI={10.1063/1.2770995}, abstractNote={A planar electroabsorption modulator suitable for spatial light modulation has been constructed. The device operates near the band edge of zinc oxide at 3.3eV and is based on broadening and shifting of the unconfined exciton with an externally applied electric field. The ZnO active layer was deposited on an aluminum/titanium oxide dielectric on an indium tin oxide conducting layer on glass. A transparent conductive InGaZnO layer on a spin on glass insulator served as the top contact, allowing high electric fields to be applied transverse to the ZnO layer. The modulator operates at room temperature in transmission mode with +45% modulation at 373nm and −18% modulation at 380nm at 140V applied bias, corresponding to ∼450kV∕cm electric field across the ZnO active layer.}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Zhang, X. Y. and Dhawan, A. and Wellenius, P. and Suresh, A. and Muth, J. F.}, year={2007}, month={Aug} }
 @article{suresh_wellenius_dhawan_muth_2007, title={Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors}, volume={90}, ISSN={["0003-6951"]}, DOI={10.1063/1.2716355}, abstractNote={Indium gallium zinc oxide deposited by pulsed laser deposition at room temperature was used as a channel layer to fabricate transparent thin film transistors with good electrical characteristics: field effect mobility of 11cm2V−1s−1 and subthreshold voltage swing of 0.20V∕decade. By varying the oxygen partial pressure during deposition the conductivity of the channel was controlled to give a low off-current of ∼10pA and a drain current on/off ratio of ∼5×107. Changing the channel layer thickness was a viable way to vary the threshold voltage. The effect of the gate dielectric on the electrical behavior was also explored.}, number={12}, journal={APPLIED PHYSICS LETTERS}, author={Suresh, Arun and Wellenius, Patrick and Dhawan, Anuj and Muth, John}, year={2007}, month={Mar} }