Arun Suresh

Wellenius, P., Suresh, A., Luo, H., Lunardi, L. M., & Muth, J. F. (2009). An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel. JOURNAL OF DISPLAY TECHNOLOGY, 5(12), 438–445. https://doi.org/10.1109/JDT.2009.2024012

Suresh, A., Novak, S., Wellenius, P., Misra, V., & Muth, J. F. (2009). Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric. APPLIED PHYSICS LETTERS, 94(12). https://doi.org/10.1063/1.3106629

Wellenius, P., Suresh, A., Foreman, J. V., Everitt, H. O., & Muth, J. F. (2008, January 15). A visible transparent electroluminescent europium doped gallium oxide device. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 146, pp. 252–255. https://doi.org/10.1016/j.mseb.2007.07.060

Suresh, A., & Muth, J. F. (2008). Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors. APPLIED PHYSICS LETTERS, 92(3). https://doi.org/10.1063/1.2824758

Sarkar, S., Suresh, A., Myers, F. B., Muth, J. F., & Misra, V. (2008). Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric. APPLIED PHYSICS LETTERS, 92(22). https://doi.org/10.1063/1.2918981

Suresh, A., Gollakota, P., Wellenius, P., Dhawan, A., & Muth, J. F. (2008, February 15). Transparent, high mobility of InGaZnO thin films deposited by PLD. THIN SOLID FILMS, Vol. 516, pp. 1326–1329. https://doi.org/10.1016/j.tsf.2007.03.153

Suresh, A., Wellenius, P., & Muth, J. F. (2007). High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material. 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, pp. 587–590. https://doi.org/10.1109/iedm.2007.4419007

Zhang, X. Y., Dhawan, A., Wellenius, P., Suresh, A., & Muth, J. F. (2007). Planar ZnO ultraviolet modulator. APPLIED PHYSICS LETTERS, 91(7). https://doi.org/10.1063/1.2770995

Suresh, A., Wellenius, P., Dhawan, A., & Muth, J. (2007). Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors. APPLIED PHYSICS LETTERS, 90(12). https://doi.org/10.1063/1.2716355