Mitra Dutta

Characterization of a three-phase dual active bridge DC/DC converter in Wye-Delta connection for a high frequency and high power applications

2011 IEEE Energy Conversion Congress and Exposition (ECCE), 4183–4188.

Applicability of the Fermi golden rule and the possibility of low-field runaway transport in nitrides

Journal of Physics: Condensed Matter, 13(28), 6233–6246.

Continuum model of optical phonons in a nanotube

Superlattices and Microstructures, 29(6), 405–409.

Phonons in III–V nitrides: Confined phonons and interface phonons

Physica E: Low-Dimensional Systems and Nanostructures, 11(2-3), 277–280.

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.

Energy-dependent electron scattering via interaction with optical phonons in wurtzite crystals and quantum wells

Physical Review B, 61(3), 2034–2040.

Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice

APPLIED PHYSICS LETTERS, 76(15), 1969–1971.

Confined phonons and phonon-mode properties of III–V nitrides with wurtzite crystal structure

Physica B: Condensed Matter, 263-264, 510–513.

Dispersion of polar optical phonons in wurtzite quantum wells

Physical Review B, 59(7), 5013–5020.

Phase instability and electron-assisted renormalization of acoustic phonon spectrum in free-standing quantum wires

Physica B: Condensed Matter, 263-264, 522–525.

Phonon dynamics and lifetimes of AlN and GaN crystallites

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65).

Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure

PHYSICAL REVIEW B, 59(20), 12977–12982.

Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN

JOURNAL OF APPLIED PHYSICS, 85(7), 3535–3539.

Tailoring of optical phonon modes in nanoscale semiconductor structures: role of interface-optical phonons in quantum-well lasers

Physica B: Condensed Matter, 263-264, 462–465.

Field controlled current modulators based on tunable barrier strengths

Washington, DC: U.S. Patent and Trademark Office.

Long-wavelength optical phonons in ternary nitride-based crystals

Physical Review B, 58(23), 15283–15287.

Optical-phonon confinement and scattering in wurtzite heterostructures

Physical Review B, 58(8), 4860–4865.

Quantum-based electronic devices and systems

Singapore; River Edge, NJ: World Scientific.

Electron–optical-phonon scattering in wurtzite crystals

Physical Review B, 56(3), 997–1000.

Raman analysis of the configurational disorder in AlxGa1-xN films

APPLIED PHYSICS LETTERS, 71(15), 2157–2159.