@article{liu_aspnes_2010, title={Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition}, volume={28}, ISSN={["0734-2101"]}, DOI={10.1116/1.3442805}, abstractNote={The authors report comparative studies of the deposition of GaP on (001) GaAs, as-polished (001)Si, SiO2-coated (001)Si, nanoscopically roughened (001)Si, and polycrystalline GaP surfaces by organometallic chemical vapor deposition using trimethylgallium (TMG) and phosphine (PH3) sources. The thicknesses of the GaP films increase or decrease exponentially toward the edge of wafers. This functional dependence implies one-dimensional gas-phase diffusion of a reactive species, possibly H–P=Ga–CH3, generated by heterogeneous catalysis according to the reactivity of the different surfaces to the decomposition of PH3. Deposition on (001)Si depends on the type of nanoscopic roughness of the substrate.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Liu, X. and Aspnes, D. E.}, year={2010}, pages={583–589} }
 @article{liu_aspnes_2009, title={Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition}, volume={94}, number={25}, journal={Applied Physics Letters}, author={Liu, X. and Aspnes, D. E.}, year={2009} }
 @article{liu_aspnes_2008, title={Thickness inhomogenities in the organometallic chemical vapor deposition of GaP}, volume={93}, ISSN={["0003-6951"]}, DOI={10.1063/1.3029742}, abstractNote={We analyze exponential lateral-thickness variations observed in the growth of GaP on (001) GaAs, thermally generated SiO2, (001) Si, and nanoscopically roughened Si surfaces by organometallic chemical vapor deposition, using as a reference the polycrystalline GaP deposited on the Mo susceptor surrounding the 2in. wafers. We find these variations to be due to differences in the chemical reactivities of the various surfaces toward the generation of a precursor, probably a H–P=Ga–CH3 dimer adduct, by heterogeneous catalysis followed by desorption and diffusion through the gas phase.}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Liu, X. and Aspnes, D. E.}, year={2008}, month={Nov} }
 @article{liu_kim_aspnes_2007, title={Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)SI}, volume={25}, ISSN={["1071-1023"]}, DOI={10.1116/1.2750345}, abstractNote={The authors report real-time spectroscopic-polarimetric determinations of the initial phase of GaP heteroepitaxy by organometallic chemical vapor deposition on nanoscopically roughened (NR) (001)Si substrates, where polarimetry measurements are also used to quantify roughness. The authors compare the results with analogous data for GaP homoepitaxy and the initial phase of GaP heteroepitaxy on (001)GaAs. The large density of nucleation sites on NRSi significantly improves film continuity relative to nonroughened vicinal (001)Si substrates, but conditions that are typically used to grow GaP on (001)III-V surfaces generate metallic Ga, indicating that NRSi is more efficient at decomposing trimethylgallium than either GaP or GaAs.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Liu, X. and Kim, I. K. and Aspnes, D. E.}, year={2007}, pages={1448–1452} }