@misc{misra_shrivastava_chen_mathur_2010, title={Molecular memory devices including solid-state dielectric layers and related methods}, volume={7,642,546}, number={2010 Jan. 5}, author={Misra, V. and Shrivastava, R. and Chen, Z. and Mathur, G.}, year={2010} }
 @article{chen_sarkar_biswas_misra_2009, title={Atomic Layer Deposition of Hafnium Dioxide on TiN and Self-Assembled Monolayer Molecular Film}, volume={156}, ISSN={["1945-7111"]}, DOI={10.1149/1.3125722}, abstractNote={Hafnium dioxide (HfO 2 ) thin films with thicknesses ranging from 20 to 100 A have been grown in a viscous flow reactor using atomic layer deposition (ALD) with tetrakis(dimethylamido)hafnium(IV) and water as the reactants. HfO 2 ALD films are deposited successfully at 200°C on different molecular monolayers. X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy analyses show a continuous growth of the HfO 2 layer on the self-assembled monolayer molecules. Electrical properties characterized by current-voltage measurements suggest that three parameters play important roles in determining the physical structure of HfO 2 , namely, the precursor pulse time, the sample exposure time, and the time for purging out an unreacted precursor. ALD conditions for different substrates have been optimized so that excellent electrical properties can be obtained for HfO 2 films on molecules. Transmission electron microscopy of 30 and 60 A ALD HfO 2 on TiN and molecular monolayers shows a continuous deposition of HfO 2 . This process enables the development of a class of molecular electronic devices, solid-state molecular memory devices.}, number={7}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Chen, Zhong and Sarkar, Smita and Biswas, Nivedita and Misra, Veena}, year={2009}, pages={H561–H566} }
 @article{chen_lee_sarkar_gowda_misra_2007, title={A molecular memory device formed by HfO2 encapsulation of redox-active molecules}, volume={91}, ISSN={["0003-6951"]}, DOI={10.1063/1.2800824}, abstractNote={Solid state metal-insulator-molecule-metal (MIMM) devices were fabricated by encapsulating a redox-active molecular layer between a metal substrate and a dielectric thin film of atomic layer deposition (ALD) hafnium dioxide (HfO2). Redox properties of molecules are preserved after atomic layer deposition. The leakage current of devices is greatly improved by incorporating the ALD HfO2 thin layer. Capacitance measurements of these MIMM devices show a large frequency dispersion indicating the charging and discharging of the molecular layer.}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Chen, Zhong and Lee, Bongmook and Sarkar, Smita and Gowda, Srivardhan and Misra, Veena}, year={2007}, month={Oct} }