@article{washington_joseph_raoux_jordan-sweet_miller_cheng_schrott_chen_dasaka_shelby_et al._2011, title={Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5}, volume={109}, ISSN={["1089-7550"]}, DOI={10.1063/1.3524510}, abstractNote={The chemical and structural effects of processing on the crystallization of nitrogen doped Ge2Sb2Te5 is examined via x-ray photoelectron spectroscopy (XPS), x-ray absorption spectroscopy (XAS), time resolved laser reflectivity, and time resolved x-ray diffraction (XRD). Time resolved laser reflectivity and XRD show that exposure to various etch and ash chemistries significantly reduces the crystallization speed while the transition temperature from the rocksalt to the hexagonal phase is increased. XPS and XAS attribute this to the selective removal and oxidization of N, Ge, Sb, and Te, thus altering the local bonding environment to the detriment of device performance.}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Washington, J. S. and Joseph, E. A. and Raoux, S. and Jordan-Sweet, J. L. and Miller, D. and Cheng, H. -Y. and Schrott, A. G. and Chen, C. -F. and Dasaka, R. and Shelby, B. and et al.}, year={2011}, month={Feb} }
 @inproceedings{washington_josep_paesler_lucovsky_jordan-sweet_raoux_chen_pyzyna_dasaka_schrott_et al._2009, title={The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te5}, volume={1160}, DOI={10.1557/proc-1160-h13-08}, abstractNote={Abstract}, booktitle={Materials and physics for nonvolatile memories}, author={Washington, J. S. and Josep, E. and Paesler, M. A. and Lucovsky, G. and Jordan-Sweet, J. L. and Raoux, S. and Chen, C. F. and Pyzyna, A. and Dasaka, R. K. and Schrott, A. and et al.}, year={2009}, pages={163–168} }
 @article{paesler_baker_lucovsky_taylor_washington_2007, title={Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7}, volume={9}, number={10}, journal={Journal of Optoelectronics and Advanced Materials}, author={Paesler, M. A. and Baker, D. A. and Lucovsky, G. and Taylor, P. C. and Washington, J. S.}, year={2007}, pages={2996–3001} }